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Semiconductor structure and forming method thereof

A semiconductor and connecting part technology, applied in the field of semiconductor structure and its formation, can solve problems such as large contact resistance, and achieve the effects of reducing loss, improving efficiency, and improving controllability

Active Publication Date: 2019-03-05
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the contact resistance of the semiconductor device formed by the prior art is relatively large

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Experimental program
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Embodiment Construction

[0030] As mentioned in the background, the contact resistance of the semiconductor device is relatively high.

[0031] Figure 1 to Figure 3 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.

[0032] Please refer to figure 1 , providing a substrate 100, the substrate 100 has a first dielectric layer 101; a first opening (not shown in the figure) is formed in the first dielectric layer 101; a first interconnection is formed in the first opening structure 102; a stop layer 103 is formed on the first dielectric layer 101 and the first interconnection structure 102; a second dielectric layer 104 is formed on the stop layer 103, and a first mask is formed on the second dielectric layer 104 The film layer 105 has a first mask opening (not shown in the figure) in the first mask layer 105; a second mask layer is arranged in the first mask opening and on the first mask layer 105 140, the second mask layer 140 has a second mask openi...

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Abstract

The invention provides a semiconductor structure and a forming method thereof. The method comprises the following steps that a substrate is provided, wherein a first dielectric layer is arranged on the substrate, and a first opening is formed in the first dielectric layer; a first interconnection part and a third opening positioned on the first interconnection part are formed in the first opening;a second interconnection part is formed in the third opening, wherein the reducibility of the second interconnection part material is weaker than that of the first interconnection part material; a second dielectric layer is formed on the first dielectric layer and the second interconnection part; and a part of the second dielectric layer is removed, a second opening is formed in the second dielectric layer, and a second interconnection part is exposed from the bottom of the second opening. By adoption of the method, the controllability of the morphology of the second opening can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the development of semiconductor technology, semiconductor devices have a deep submicron structure, and semiconductor integrated circuits (ICs) contain a huge number of semiconductor elements. In this large-scale integrated circuit, not only single-layer interconnection structures but also multi-layer interconnection structures are protected. The multilayer interconnection structures are stacked on each other, and are isolated by a dielectric layer between the multilayer interconnection structures. In particular, when using a dual-damascene process to form a multilayer interconnection structure, it is necessary to form trenches and via holes for interconnection in the dielectric layer in advance, and then fill the trenches and vias with conductive materials such as copper. throu...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/528H01L23/532
CPCH01L21/76807H01L23/5283H01L23/53209
Inventor 袁可方王梓周俊卿
Owner SEMICON MFG INT (SHANGHAI) CORP
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