Method for joining nano-impregnated transient eutectic phase with SiC ceramic as well as ceramic prepared by method and application
A eutectic phase and ceramic technology, which is applied in the field of nano-impregnated transient eutectic phase to connect SiC ceramics, can solve the problems of difficult parts, weak thermal shock resistance, large manufacturing size, etc., and achieve a dense and defect-free connection layer. dense effect
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Embodiment 1
[0028] 1. Preparation: Nano-SiC powder, Al 2 o 3 and Ho 2 o 3 As a connecting material, the SiC powder has a purity of 99% and a particle size of 10nm; Al 2 o 3 The purity is 99%, the particle size is 0.1μm; Ho 2 o 3 The purity is 99%, the particle size is 0.1μm; SiC:Al 2 o 3 :Ho 2 o 3 The mass percentage is 93wt%: 2wt%: 5wt%. The connecting material powder is mixed on a planetary ball mill for 8 hours according to the above ratio. The solvent is absolute ethanol. The mixed powder obtained after drying is spread in the middle of two polished SiC A sandwich structure is formed, and subjected to 500MPa cold isostatic pressing, and then connected in a heat treatment furnace. The specific process parameters of the connection are: heating up to 800°C at 20°C / min, then rising to 1400°C at 10°C / min, holding for 1 hour, pressurizing 0.1MPa, and the connection environment is vacuum.
[0029] 2. Performance test: After the connection in this example, the connection strength o...
Embodiment 2
[0031] 1. Preparation: Nano-SiC powder, Al 2 o 3 and CeO 2 As a connecting material, the particle size of SiC is 100nm; Al 2 o 3 The particle size is 5 μm; Ho 2 o 3 Particle size is 5μm; SiC:Al 2 o 3 :CeO 2 The mass percentage is 90wt%: 5wt%: 5wt%. Connect according to the method of Example 1, wherein the cold isostatic pressing pressure is 200MPa, and the sintering process is: heat up to 800°C at 20°C / min, and then heat up to 800°C at 10°C / min Raise the temperature to 1500°C, hold the temperature for 1 hour, pressurize 0.01MPa, and connect the environment to vacuum.
[0032] 2. Performance test: The connection strength of the workpiece after connection in this example is 180MPa at room temperature, and 150MPa at a high temperature of 1600°C; it is corroded for 30 days in an autoclave under 360°C / 18.6MPa / pure water corrosion conditions, The corrosion rate is consistent with the substrate; after the connection, the base metal and the connection layer have no thermal st...
Embodiment 3
[0034] 1. Preparation: Nano-SiC powder, Al 2 o 3 and Ho 2 o 3 As a connecting material, the particle size of SiC is 50nm; Al 2 o 3 The particle size is 10μm; Ho 2 o 3 Particle size is 10μm; SiC:Al 2 o 3 :Ho 2 o 3 The mass percentage is 90wt%: 5wt%: 5wt%, connected according to the method of Example 1, wherein the cold isostatic pressing pressure is 300MPa, and the sintering process is: heating up at 20°C / min to 800°C, and then raising the temperature at 10°C / min To 1600°C, keep warm for 0.5h, pressurize 0.01MPa, and connect the environment to vacuum.
[0035] 2. Performance test: the connection strength of the workpiece after connection in this example is 200MPa at room temperature, and 180MPa at a high temperature of 1600°C; it is corroded for 50 days in an autoclave under 360°C / 18.6MPa / pure water corrosion conditions, The corrosion rate is consistent with the substrate; after the connection, the base metal and the connection layer have no thermal stress concentrat...
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