A method of nano-impregnated transient eutectic phase-connected SIC ceramics and its prepared ceramics and applications
A eutectic phase and transient technology, applied in the direction of reactors, reactor fuel elements, distance measurement, etc., can solve the problems of weak thermal shock resistance, difficult parts, large manufacturing size, etc., to achieve a dense connection layer and a dense connection layer. The effect of defects
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Embodiment 1
[0028] 1. Preparation: Nano-SiC powder, Al 2 o 3 and Ho 2 o 3 As a connecting material, SiC powder has a purity of 99% and a particle size of 10nm; Al 2 o 3 The purity is 99%, the particle size is 0.1μm; Ho 2 o 3 The purity is 99%, the particle size is 0.1μm; SiC:Al 2 o 3 :Ho 2 o 3 The mass percentage is 93wt%: 2wt%: 5wt%. The connecting material powder is mixed on a planetary ball mill for 8 hours according to the above ratio. The solvent is absolute ethanol. The mixed powder obtained after drying is spread in the middle of two polished SiC A sandwich structure is formed, and subjected to 500MPa cold isostatic pressing, and then connected in a heat treatment furnace. The specific process parameters of the connection are: heating up to 800°C at 20°C / min, then rising to 1400°C at 10°C / min, holding for 1 hour, pressurizing 0.1MPa, and the connection environment is vacuum.
[0029] 2. Performance test: After the connection in this example, the connection strength of th...
Embodiment 2
[0031] 1. Preparation: Nano-SiC powder, Al 2 o 3 and CeO 2 As a connecting material, the particle size of SiC is 100nm; Al 2 o 3 The particle size is 5 μm; Ho 2 o 3 Particle size is 5μm; SiC:Al 2 o 3 :CeO 2 The mass percentage is 90wt%: 5wt%: 5wt%, connected according to the method of Example 1, wherein the cold isostatic pressing pressure is 200MPa, and the sintering process is: heating up to 800°C at 20°C / min, and then heating at 10°C / min Raise the temperature to 1500°C, keep it warm for 1 hour, pressurize at 0.01MPa, and connect the environment to vacuum.
[0032] 2. Performance test: After the connection in this example, the connection strength of the workpiece at room temperature is 180MPa, and the connection strength at 1600°C is 150MPa; it is corroded for 30 days in an autoclave under 360°C / 18.6MPa / pure water corrosion conditions, The corrosion rate is consistent with that of the substrate; after the connection, there is no thermal stress concentration between ...
Embodiment 3
[0034] 1. Preparation: Nano-SiC powder, Al 2 o 3 and Ho 2 o 3 As a connecting material, the particle size of SiC is 50nm; Al 2 o 3 The particle size is 10μm; Ho 2 o 3 Particle size is 10μm; SiC:Al 2 o 3 :Ho 2 o 3 The mass percentage is 90wt%: 5wt%: 5wt%, connected according to the method of Example 1, wherein the cold isostatic pressing pressure is 300MPa, and the sintering process is: heating up at 20°C / min to 800°C, and then raising the temperature at 10°C / min To 1600°C, keep warm for 0.5h, pressurize 0.01MPa, and connect the environment to vacuum.
[0035] 2. Performance test: the connection strength of the workpiece after connection in this example is 200MPa at room temperature, and 180MPa at a high temperature of 1600°C; it is corroded for 50 days in an autoclave under 360°C / 18.6MPa / pure water corrosion conditions, The corrosion rate is consistent with the substrate; after the connection, the base metal and the connection layer have no thermal stress concentrat...
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