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A kind of thin film solar cell and its preparation method

A technology of thin-film solar cells and transparent conductive films, which is applied in the field of solar cells, can solve the problems of low short-circuit current density of CdTe cells, and achieve the effects of suitable large-scale production, high diffusion speed, high stability and service life

Inactive Publication Date: 2020-06-23
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] The current method for increasing the short-circuit current density of CdTe batteries is usually to use materials with larger band gaps as window layer materials, such as: using CdS:O / CdSe as window layer materials (Naba R.Paudel, Jonathan D.Poplawsky, Karren L. Moore, and Yanfa Yan, IEEE JOURNAL OF PHOTOVOLTAICS, VOL.5, NO.5, SEPTEMBER 2015, 1492~1496), using CdS:O as the window layer material (Jason M.Kephart, RussellM.Geisthardt, W.S.Sampath, Prog. Photovolt: Res.Appl.2015; 23:1484~1492), using CdS / ZnS as the window layer material (Isaiah O.Oladeji, Lee Chow, Christos S.Ferekides, VijayViswanathan, Zhiyong Zhao, Solar Energy Materials & Solar Cells 61 (2000) 203~211), but the CdTe batteries obtained by using these materials have a short-circuit current density of less than 30mA / cm 2 , the short-circuit current density of CdTe batteries is still low

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  • A kind of thin film solar cell and its preparation method
  • A kind of thin film solar cell and its preparation method

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preparation example Construction

[0032] The present invention provides a method for preparing a thin film solar cell described in the above scheme, comprising the following steps:

[0033] According to the structure of the thin film solar cell, a transparent conductive film, a window layer, a CdTe optical absorption layer, a quantum dot buffer layer and a conductive back electrode are sequentially prepared on the substrate.

[0034] The invention prepares a transparent conductive film on a substrate to obtain a transparent conductive film / substrate structure. In the present invention, the method for preparing the transparent conductive film on the substrate preferably includes a sol-gel method, a magnetron sputtering method or a chemical vapor deposition method.

[0035] In the present invention, there is no special limitation on the preparation parameters of the transparent conductive film prepared by the sol-gel method, and the preparation parameters well-known to those skilled in the art can be used. In a...

Embodiment 1

[0057] Preparation of SnO on rigid glass by sol-gel method using rigid glass as substrate 2 : F(FTO) film, get SnO 2 :F(FTO) film / rigid glass structure; among them, SnO 2 : The preparation method of F(FTO) thin film is: take 50mL SnCl 2 and 50mLH 2 Dissolve O in 50 mL of absolute ethanol, reflux at 80°C for 4 hours, slowly add water and ethanol mixture dropwise at a volume ratio of 1:1; reflux at 80°C for 3 hours, adjust the pH value to 3; 4 F water solution, the prepared solution was left to stand for 24 hours for use; the cleaned substrate was fixed on a film spinner, and the film was spinned at a speed of 2000r / min; then dried in a vacuum oven at 100°C for 30min, and then placed in a muffle In the furnace, the temperature was slowly raised to 300°C and kept at a constant temperature for 10 minutes; the above process of throwing the film was repeated 4 times; finally, it was treated at 600°C for 20 minutes; the SnO 2 : The thickness of the F(FTO) film is 200nm.

[0058]...

Embodiment 2

[0064] Using flexible mica as the substrate material, the ZnO:Al(AZO) film was prepared on the flexible mica by magnetron sputtering to obtain a ZnO:Al(AZO) film / flexible mica structure; wherein, the ZnO:Al(AZO) film The preparation parameters are: the temperature of the flexible mica substrate is room temperature, the target base distance is 8cm, the carrier gas is argon, the pressure is 0.1Pa, and the sputtering power density is 2.78W / cm 2 ; The thickness of the ZnO:Al (AZO) thin film is 350nm.

[0065] Prepare CdS:O window layer on ZnO:Al(AZO) thin film / flexible mica structure by magnetron sputtering method, obtain CdS:O window layer / ZnO:Al(AZO) thin film / flexible mica structure; wherein, CdS:O The preparation parameters of the window layer are: the temperature of the ZnO:Al(AZO) film / flexible mica structure is room temperature, the distance between the target and the base is 13cm, the carrier gas is argon / oxygen with a volume ratio of 56:1, and the pressure is 3Pa. The po...

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Abstract

The invention provides a thin-film solar cell and a preparation method thereof, and belongs to the field of solar cells. The thin-film solar cell comprises a substrate, a transparent conductive thin film, a window layer, a CdTe optical absorption layer, a quantum dot buffer layer and a conductive back electrode, which are sequentially laminated; and the quantum dot buffer layer comprises a SnSe quantum dot buffer layer or a Sb2Se3 quantum dot buffer layer. The SnSe quantum dot buffer layer or the Sb2Se3 quantum dot buffer layer serves as the quantum dot buffer layer; and the energy level of the SnSe quantum dot or the Sb2Se3 quantum dot is different from CdTe, so the light which cannot be absorbed by the CdTe can be absorbed, thereby improving the short-circuit current density. The experimental result of the embodiment shows that the short-circuit current density of the thin-film solar battery provided by the invention reaches 35. 64 mA / cm2; in addition, the thin-film solar cell provided by the invention is simple in structure and suitable for large-scale production.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a thin-film solar cell and a preparation method thereof. Background technique [0002] CdTe battery structure is usually: substrate / window layer / CdTe absorbing layer / buffer layer / back electrode, light passes through the substrate / window layer to reach the CdTe absorbing layer, the window layer material is usually CdS, because the optical bandgap of CdS is 2.4eV , before the light reaches the CdTe absorbing layer, it will be absorbed by CdS with a short wavelength less than 510nm, and the light absorbed by CdS will not contribute to the short-circuit current density of the CdTe battery. Therefore, the improvement of the short-circuit current density of CdTe batteries is usually achieved by reducing the thickness of CdS. However, as the thickness of CdS decreases, the PN junction characteristics of CdTe batteries become worse, which reduces the open circuit voltage of CdTe batteries, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0352H01L31/072H01L31/18B82Y40/00
CPCB82Y40/00H01L31/032H01L31/035218H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 李辉古宏伟屈飞
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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