Ultraviolet light-emitting diode and method of making the same

Abstract

The invention discloses an ultraviolet light-emitting diode. The ultraviolet light-emitting diode comprises a sapphire substrate and a GaN buffer layer and comprises a GaN nanowire layer and a GaN nanowire fusion layer, wherein the GaN nanowire layer is arranged on a surface of the sapphire substrate of the ultraviolet light-emitting diode, the GaN nanowire layer comprises a GaN nanowire, two endsof the GaN nanowire are respectively connected with the GaN nanowire fusion layer and the sapphire substrate so that electrical connection between the GaN nanowire fusion layer and the sapphire substrate is achieved, and the GaN nanowire fusion layer is arranged between the GaN nanowire layer and the GaN buffer layer of the ultraviolet light-emitting diode. A traditional GaN layer is substitutedby the GaN nanowire layer, the contact area of the GaN material and the substrate is reduced, meanwhile, the defect and the dislocation of a contact surface are also reduced, the internal quantum efficiency is improved, and the component efficiency is further improved. The invention simultaneously provides a fabrication method of the ultraviolet light-emitting diode having the beneficial effect.

Description

technical field [0001] The invention relates to the field of semiconductor light emitting devices, in particular to an ultraviolet light emitting diode and a manufacturing method thereof. Background technique [0002] Since the 1990s, researchers have turned their research focus to III-nitride ultraviolet light-emitting devices, and the development of ultraviolet light-emitting diodes has achieved staged achievements so far. UV light-emitting diodes have a wide range of applications, such as air and water purification, disinfection, ultraviolet medical treatment, high-density optical storage systems, full-color displays, and solid-state white lighting, etc. Among them, GaN is a wide bandgap compound material, which has the characteristics of blue light emission, high temperature, high frequency, high voltage, high power, acid resistance, alkali resistance, and corrosion resistance, which makes it occupy an important position in the field of blue light and ultraviolet optoele...

AI Technical Summary

Problems solved by technology

[0003] In the existing GaN-based ultraviolet light-emitting diodes, there is a lack of substrates that can match GaN materials, resulting in large lattice mismatches, resulting in large defects and more dislocations, which limits the internal quantum efficiency of the components.

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