Graphene isolation baffle film and preparation method thereof
A technology of graphene and graphene layer, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc. The service life of solar cells and organic light-emitting devices, the reduction of the mechanical properties of the substrate, etc., can achieve the effect of improving the performance of insulating gas and moisture, improving the physical and chemical properties, and increasing the space saturation.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0033] according to figure 1 , 2 Shown, the present invention proposes a kind of technical scheme:
[0034] A kind of graphene isolating film, comprises target substrate 1, inorganic thin film layer 2 and graphene layer 3, and described target substrate 1 is provided with inorganic thin film layer 2, and described inorganic thin film layer 2 is made up of inorganic material, and described target The substrate 1 is a flexible substrate, the thickness of the target substrate 1 is 10 microns, and a graphene layer 3 is arranged above the inorganic thin film layer 2 .
[0035] A further improvement is: the target substrate 1 is specifically a polyimide substrate, a polyethersulfone substrate, a polyether ether ketone substrate, a polyethylene terephthalate substrate, a polyvinyl chloride substrate or a polycarbonate substrate. A sort of.
[0036] A preparation method for a graphene insulating barrier film, comprising the following steps:
[0037] Step 1: The first chemical vapo...
Embodiment 2
[0048] according to figure 1 , 3 Shown, the present invention proposes a kind of technical scheme:
[0049] A kind of graphene isolating film, comprises target substrate 1, inorganic thin film layer 2 and graphene layer 3, and described target substrate 1 is provided with inorganic thin film layer 2, and described inorganic thin film layer 2 is made up of inorganic material, and described target The substrate 1 is a flexible substrate, the thickness of the target substrate 1 is 500 microns, and a graphene layer 3 is arranged above the inorganic thin film layer 2 .
[0050] A further improvement is: the target substrate 1 is specifically a polyimide substrate, a polyethersulfone substrate, a polyether ether ketone substrate, a polyethylene terephthalate substrate, a polyvinyl chloride substrate or a polycarbonate substrate. A sort of.
[0051] A preparation method for a graphene insulating barrier film, comprising the following steps:
[0052] Step 1: The first chemical vap...
Embodiment 3
[0063] according to figure 1 , 4 Shown, the present invention proposes a kind of technical scheme:
[0064] A kind of graphene isolating film, comprises target substrate 1, inorganic thin film layer 2 and graphene layer 3, and described target substrate 1 is provided with inorganic thin film layer 2, and described inorganic thin film layer 2 is made up of inorganic material, and described target The substrate 1 is a flexible substrate, the thickness of the target substrate 1 is 1000 microns, and a graphene layer 3 is arranged above the inorganic thin film layer 2 .
[0065] A further improvement is: the target substrate 1 is specifically a polyimide substrate, a polyethersulfone substrate, a polyether ether ketone substrate, a polyethylene terephthalate substrate, a polyvinyl chloride substrate or a polycarbonate substrate. A sort of.
[0066] A preparation method for a graphene insulating barrier film, comprising the following steps:
[0067] Step 1: The first chemical va...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap