Graphene isolation baffle film and preparation method thereof

A technology of graphene and graphene layer, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc. The service life of solar cells and organic light-emitting devices, the reduction of the mechanical properties of the substrate, etc., can achieve the effect of improving the performance of insulating gas and moisture, improving the physical and chemical properties, and increasing the space saturation.

Inactive Publication Date: 2019-03-08
厦门信果石墨烯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Food is composed of organic substances, and the quality of food is easily affected by moisture and other gases. Some electronic materials used in display devices are also sensitive to moisture and gases. Device substrates such as organic solar cells and organic light-emitting devices (OLEDs) The elements on the surface will decompose rapidly when exposed to oxygen and moisture. When oxygen and moisture easily permeate the substrate, it will reduce the service life of devices such as organic solar cells and organic light-emitting devices (OLEDs). Some existing barriers to gas and moisture Most of the barrier materials use Al2O3 / polyacrylate, SiON / Si, etc. to be laminated on the plastic substrate to isolate gas and moisture, but this method requires a vacuum process, which is complicated and difficult, and the use of inorganic materials reduces the barriers of the substrate. Due to the mechanical properties of the material, the prepared insulating film cannot improve the gas and moisture barrier properties of electronic devices.

Method used

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  • Graphene isolation baffle film and preparation method thereof
  • Graphene isolation baffle film and preparation method thereof
  • Graphene isolation baffle film and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0033] according to figure 1 , 2 Shown, the present invention proposes a kind of technical scheme:

[0034] A kind of graphene isolating film, comprises target substrate 1, inorganic thin film layer 2 and graphene layer 3, and described target substrate 1 is provided with inorganic thin film layer 2, and described inorganic thin film layer 2 is made up of inorganic material, and described target The substrate 1 is a flexible substrate, the thickness of the target substrate 1 is 10 microns, and a graphene layer 3 is arranged above the inorganic thin film layer 2 .

[0035] A further improvement is: the target substrate 1 is specifically a polyimide substrate, a polyethersulfone substrate, a polyether ether ketone substrate, a polyethylene terephthalate substrate, a polyvinyl chloride substrate or a polycarbonate substrate. A sort of.

[0036] A preparation method for a graphene insulating barrier film, comprising the following steps:

[0037] Step 1: The first chemical vapo...

Embodiment 2

[0048] according to figure 1 , 3 Shown, the present invention proposes a kind of technical scheme:

[0049] A kind of graphene isolating film, comprises target substrate 1, inorganic thin film layer 2 and graphene layer 3, and described target substrate 1 is provided with inorganic thin film layer 2, and described inorganic thin film layer 2 is made up of inorganic material, and described target The substrate 1 is a flexible substrate, the thickness of the target substrate 1 is 500 microns, and a graphene layer 3 is arranged above the inorganic thin film layer 2 .

[0050] A further improvement is: the target substrate 1 is specifically a polyimide substrate, a polyethersulfone substrate, a polyether ether ketone substrate, a polyethylene terephthalate substrate, a polyvinyl chloride substrate or a polycarbonate substrate. A sort of.

[0051] A preparation method for a graphene insulating barrier film, comprising the following steps:

[0052] Step 1: The first chemical vap...

Embodiment 3

[0063] according to figure 1 , 4 Shown, the present invention proposes a kind of technical scheme:

[0064] A kind of graphene isolating film, comprises target substrate 1, inorganic thin film layer 2 and graphene layer 3, and described target substrate 1 is provided with inorganic thin film layer 2, and described inorganic thin film layer 2 is made up of inorganic material, and described target The substrate 1 is a flexible substrate, the thickness of the target substrate 1 is 1000 microns, and a graphene layer 3 is arranged above the inorganic thin film layer 2 .

[0065] A further improvement is: the target substrate 1 is specifically a polyimide substrate, a polyethersulfone substrate, a polyether ether ketone substrate, a polyethylene terephthalate substrate, a polyvinyl chloride substrate or a polycarbonate substrate. A sort of.

[0066] A preparation method for a graphene insulating barrier film, comprising the following steps:

[0067] Step 1: The first chemical va...

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Abstract

The invention proposes a graphene isolation baffle film and a preparation method thereof. The graphene isolation baffle film comprises a target substrate, an inorganic thin film layer and a graphene layer, wherein the inorganic thin film layer is arranged on the target substrate and comprises an inorganic material, the target substrate is a flexible substrate, and the graphene layer is arranged onthe inorganic thin film layer. By executing first chemical vapor deposition and second chemical vapor deposition on the target substrate without impurity, the domain size of graphene can be increased, the domain boundary of the graphene is reduced, and the graphene defect can be minimized; meanwhile, by the second chemical vapor deposition, the space saturability among graphene domains can be improved, carbon atoms are filled among the graphene domains, a higher-density granulation layer can be formed, and the gas and moisture isolation performance of the prepared graphene isolation baffle film is further improved; and moreover, by the method, vacuum pumping is not needed, the process is moderate in difficulty, and the method is suitable for preparation on a large scale.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a graphene barrier film and a preparation method thereof. Background technique [0002] Graphene is a structure in which the carbon atomic layer has a two-dimensional carbon atomic planar structure filled with hexagonal lattice point planes. It has excellent tensile strength, electron mobility and thermal conductivity. The current method of preparing graphene is mainly by using chemical vapor deposition. (CVD) method to manufacture graphene, which is most suitable for large-scale production. [0003] Food is composed of organic substances, and the quality of food is easily affected by moisture and other gases. Some electronic materials used in display devices are also sensitive to moisture and gases. Device substrates such as organic solar cells and organic light-emitting devices (OLEDs) The elements on the surface will decompose rapidly when exposed to oxygen and moisture. When oxygen a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52C23C16/26
CPCC23C16/26H10K50/844
Inventor 刘翼刘乐光
Owner 厦门信果石墨烯科技有限公司
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