Method for improving electrical properties of AlGaN/GaN HEMT (High-Electron-Mobility Transistor) device

Abstract

The invention relates to a method for improving the electrical properties of an AlGaN / GaN HEMT (High-Electron-Mobility Transistor) device. The method comprises the step of carrying out proton irradiation on the AlGaN / GaN HEMT device under the condition of a preset irradiation temperature, proton fluence and proton energy. By use of the embodiment of the invention, the protons of certain fluence and energy can be adopted to carry out irradiation on the AlGaN / GaN HEMT device, incoming protons can make up inherent defects in the device so as to reduce defect density, the capture of defects on a current carrier is lowered, electric density is increased, grid leakage current is reduced, the maximum saturation current and transconductance of the device can be improved, and therefore, the electric performance of the device is improved.

Description

Technical field [0001] The invention belongs to the field of semiconductor technology, and specifically relates to a method for improving the electrical performance of AlGaN / GaN HEMT devices. Background technique [0002] Group III nitride materials are ideal materials for manufacturing high-voltage, high-temperature, and high-frequency electronic devices. The research on group III nitride materials has become the focus of widespread attention at home and abroad. Devices prepared from them are also widely used in national defense, aerospace, and high-frequency broadband. It has broad application prospects in military and civilian fields such as communications, satellite remote sensing, and radar. [0003] The heterojunction of AlGaN / GaN HEMT devices has a large conduction band shift, and the heterointerface has a strong polarization effect, which can induce a large amount of interface charges and aggregate to form a high-density two-dimensional electron gas, making AlGaN / G...

AI Technical Summary

Problems solved by technology

[0004] The existing technology has reached a relatively high level of research on AlGaN / GaN HEMT devices, but with the production of real commercial AlGaN / GaN HEMT devices, the reliability of the device and the impact of defects on device performance and yield have become an issue. Bottlenecks hindering device adoption

At present, there is still a considerable defect density problem in high-quality AlGaN / GaN HEMT devices, which seriously restricts the electrical performance of the device

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