Unlock instant, AI-driven research and patent intelligence for your innovation.

Visible light extended medium wave infrared detector unit device and preparation method thereof

An infrared detector, visible light technology, applied in electrical components, semiconductor devices, sustainable manufacturing/processing, etc., can solve problems such as increasing light absorption, reduce volume filling ratio, improve quantum efficiency and detection rate, and reduce diffusion. effect of current

Inactive Publication Date: 2019-03-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult for the anti-reflection coating to increase the light absorption of the detector in a wide range of wavelengths.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Visible light extended medium wave infrared detector unit device and preparation method thereof
  • Visible light extended medium wave infrared detector unit device and preparation method thereof
  • Visible light extended medium wave infrared detector unit device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] According to an aspect of the embodiments of the present invention, there is provided a method for preparing a visible light extended mid-wave infrared detector unit device, including:

[0030] Forming an epitaxial layer on the substrate, the epitaxial layer including an absorption layer;

[0031] Forming a light trap on the absorption layer, the bottom of the light trap is located in the absorption layer;

[0032] Etch part of the epitaxial layer to form a mesa;

[0033] An ionization film is formed on the sidewall of the mesa, and a silicon oxide or silicon nitride film is formed on the ionization film.

[0034] The mesa sequentially includes an absorption layer, a barrier layer and a contact layer from top to bottom.

[0035] Further, the ionization film is a sulfide layer attached to the sidewall of the mesa, and the silicon oxide or silicon nitride film is attached to the ionization film.

[0036] Further, the preparation method further includes forming an upper electrode and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a visible light extended medium wave infrared detector unit device and a preparation method thereof. The preparation method comprises a step of forming an epitaxial layer on a substrate, wherein the epitaxial layer comprising an absorbing layer, a step of forming a light trap on the absorbing layer, wherein the bottom of the light trap is located in the absorbing layer, a step of etching a portion of the epitaxial layer to form a mesa, and a step of forming an ionization film on the sidewall of the mesa, wherein a silicon oxide or silicon nitride film is formed on the ionization film. According to the preparation method of the invention, the addition of a light trap structure can enhance the absorption of light by a detector, the volume filling ratio is reduced, andthe diffusion current is reduced.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor materials and devices, and further relates to a visible light extended mid-wave infrared detector unit device and a preparation method thereof. Background technique [0002] InAs / GaSb superlattice materials based on antimonide material systems have had important applications in the field of infrared detectors in recent years. InAs / GaSb superlattice materials used to prepare infrared detectors are usually grown on thicker GaSb substrates using molecular beam epitaxy (MBE). In the process of preparing the detector, the substrate is removed, and the infrared light passing through the substrate is absorbed by the absorption area of ​​the detector material. However, due to the mismatch of the reflection coefficient between the air and the detector, 20% of the light is reflected by the interface, which causes the quantum efficiency of the detector to decrease. At present, the main method to reduce th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/101H01L31/0352H01L31/0236
CPCH01L31/02363H01L31/035236H01L31/101H01L31/184Y02P70/50
Inventor 郭春妍孙姚耀蒋志郝宏玥吕粤希王国伟徐应强汪韬牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI