A semiconductor device with an air bridge and its manufacturing method

Abstract

The invention discloses a semiconductor device with an air bridge and a manufacturing method thereof. Electrodes in the form of an air bridge are fabricated in the semiconductor device, thereby ensuring that the semiconductor device with the air bridge significantly reduces the loss introduced by the parasitic effect of the device, and improves the semiconductor device. frequency and power characteristics. In the technical solution provided by the present invention, the second electrode layer is formed at the hollowed-out area of ​​the second mask layer, and then superimposed on the first electrode layer to increase the thickness of the electrode structure, and the first mask layer and the second electrode layer are removed by using lift-off technology. At the same time as the second mask layer, the part of the first electrode layer in the overlapping area of ​​the first mask layer and the second mask layer is removed to finally form the electrode structure of the semiconductor device; wherein, the double mask layer stripping technology and thickening The electrode structure of the semiconductor device is manufactured by means of the electrode layer, which simplifies the process of manufacturing the semiconductor device on the basis of ensuring the stability of the air bridge at the manufactured air groove.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, and more specifically, relates to a semiconductor device with an air bridge and a manufacturing method thereof. Background technique [0002] In the development process of the terahertz application system, one of the key points is the development of a terahertz solid-state source that works at room temperature, has a small volume, low power consumption, and high output power. The resonant tunneling diode (RTD), which uses the negative differential resistance (Negative Differential Resistance, NDR) generated by the quantum tunneling effect to oscillate and output terahertz waves, has the advantages of small size, easy integration, high speed, low power consumption, and The characteristics of a small number of devices to complete multiple logic functions have become one of the hotspots in the development of terahertz solid-state sources in terahertz microsystems. [000...

AI Technical Summary

Problems solved by technology

[0003] The early development of terahertz sources based on resonant tunneling diodes was mainly based on GaAs system materials, but limited by material properties, the device power was only on the order of microwatts, which greatly limited its practical application; in comparison, GaN system materials It has the characteristics of wide adjustable bandgap, high electron saturation velocity, and good thermal stability. In theory, GaN RTD can achieve milliwatt-level power output, and it has become one of the effective ways to improve the performance of RTD terahertz sources.

[0004] At present, the experimental performance of the reported RTD devices of GaN system materials is not as good as that of GaAs system materials, and is far from meeting theoretical expectations. The charge accumulation effect caused by the high-density defects in GaN system materials degrades the performance of RTD devices; on the other hand, GaN RTDs are mainly planar or mesa structures, because nitride materials are difficult to use wet etching. The fabrication of the device structure mainly relies on dry etching, so the mesa or planar structure design with relatively simple process flow is often used

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