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Method of controlling orientation of nano structure

A nanostructure and orientation technology, applied in the field of materials, can solve the problems of high industrial manufacturing costs, high integration and miniaturization of hardware, and achieve the effect of improving practicability

Active Publication Date: 2019-04-05
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This cannot meet the requirements of the modern information industry for high integration and miniaturization of hardware. Although the use of short-wavelength x-ray sources or extreme ultraviolet light can reduce the etching line width to below 10nm, its industrial manufacturing cost is extremely high

Method used

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  • Method of controlling orientation of nano structure
  • Method of controlling orientation of nano structure
  • Method of controlling orientation of nano structure

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0041] Please refer to figure 2 , the preparation method of polyelectrolyte modified layer comprises:

[0042] S210, respectively configuring a polyelectrolyte solution including a polycation polyelectrolyte and a polyelectrolyte solution including a polyanion polyelectrolyte.

[0043] S220, spin-coat the polyelectrolyte solution including polycation polyelectrolyte on the substrate after hydrophilic treatment, wash with deionized water, and dry with nitrogen gas.

[0044] S230, spin-coat the polyelectrolyte solution including polyanion polyelectrolyte on the substrate on which the polyelectrolyte solution including polycation polyelectrolyte is spin-coated, wash with deionized water, and blow dry with nitrogen.

[0045] S240, repeat steps S220 and S230 to prepare multiple polyelectrolyte modified layers.

[0046] Optionally, nitrogen is high-purity nitrogen. Nitrogen has stable chemical properties and low cost, which can effectively reduce costs.

[0047] Polyelectrolyte...

Embodiment

[0073] Example: polyelectrolyte layer self-assembly induces PS-b-PMMA to form a "layered" ordered nanostructure perpendicular to the direction of the substrate, required raw materials: polypropylene amine hydrochloride, polyacrylic acid, PS-b-PMMA embedded segment copolymer, toluene, deionized water. Specific steps are as follows:

[0074] 1. Preparation of polyelectrolyte layer-by-layer self-assembly modified layer

[0075] Hydrophilic treatment of the substrate with plasma or a hot mixed solution of concentrated sulfuric acid and hydrogen peroxide for 1 hour.

[0076] Prepare polyacrylic acid deionized water solution and polyacrylamine hydrochloride deionized water solution.

[0077] Spin-coat the polyallylamine hydrochloride solution on the hydrophilic silicon wafer at a speed of 3000r / min, then fully wash it with deionized water, and dry it with nitrogen gas. Then, the polyacrylic acid solution was spin-coated on the polyacrylamine hydrochloride film at the same rotatio...

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Abstract

A method of controlling orientation of a nano structure comprises: using plasma or a mixed solution of concentrated sulfuric acid and hydrogen peroxide to perform hydrophilic treatment on a substrate;self-assembling various polyelectrolyte solutions layer by layer on the substrate, which is subjected to hydrophilic treatment, through a spin-coating method to obtain a polyelectrolyte modified layer; annealing the polyelectrolyte modified layer; spin-coating the annealed polyelectrolyte modified layer via a block copolymer solution, and annealing to form a vertically-oriented nano structure. The various polyelectrolytes are self-assembled layer by layer to modify the surface of the substrate so as to control the orientation of the copolymer self-assembled nano structure; the nano structureis perpendicular to the substrate; the nano structure formed by self-assembling block copolymer films is more practical in the microelectronic field.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a method for regulating the orientation of nanostructures. Background technique [0002] With the rapid development of the Internet, the information industry has higher and higher requirements for the miniaturization and integration of microelectronic devices. The photolithography method used to manufacture microelectronic devices in the past has reached the limit of industrial production due to the diffraction effect of light, that is, the 193nm process. This cannot meet the requirements of the modern information industry for high integration and miniaturization of hardware. Although the use of short-wavelength x-ray sources or extreme ultraviolet light can reduce the etching line width to below 10nm, its industrial manufacturing cost is extremely high. [0003] In recent years, scientists have proposed a new method, which uses the characteristics of block copolymers to form ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J7/00C08J5/18C08L53/00B82Y40/00
CPCB82Y40/00C08J5/18C08J7/08C08J2353/00
Inventor 赵镍刘凯杨春明边风刚欧阳晓平黄文超
Owner XIANGTAN UNIV
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