A kind of graphitic phase carbon nitride-(110) bismuth vanadate z-type heterojunction photocatalyst and its preparation method and application

A graphite-phase carbon nitride and photocatalyst technology, applied in catalyst activation/preparation, physical/chemical process catalysts, chemical instruments and methods, etc., can solve poor carrier separation efficiency, photogenerated electron-hole pair recombination rate advanced questions

Active Publication Date: 2021-06-01
陕西东尚智新科技有限公司
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Problems solved by technology

However, BiVO 4 The disadvantages of poor carrier separation efficiency and high recombination rate of photogenerated electron-hole pairs limit their practical applications.

Method used

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  • A kind of graphitic phase carbon nitride-(110) bismuth vanadate z-type heterojunction photocatalyst and its preparation method and application
  • A kind of graphitic phase carbon nitride-(110) bismuth vanadate z-type heterojunction photocatalyst and its preparation method and application
  • A kind of graphitic phase carbon nitride-(110) bismuth vanadate z-type heterojunction photocatalyst and its preparation method and application

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preparation example Construction

[0029] g-C of the present invention 3 N 4 -(110) crystal plane BiVO 4 The preparation method of Z-type heterojunction photocatalyst comprises the following steps:

[0030] Step 1, the Bi(NO 3 ) 3 ·5H 2 O dissolved in HNO 3 solution, after stirring for a certain period of time, NH 4 VO 3 , stirred for 120 minutes to form a precursor solution, and the precursor solution was hydrothermally reacted at 65-75°C for 14-16 hours to prepare BiVO 4 precipitation, the precipitation was washed with water and alcohol and then dried for later use; Bi(NO 3 ) 3 ·5H 2 O. NH 4 VO 3 The mass ratio is 3.54:1;

[0031] Step 2, CO(NH 2 ) 2 Raise the temperature to 540-560°C at a heating rate of 4.5-5.5°C / min, keep the heat for calcination for 2.8-3.2 hours, then lower the temperature to 350°C to obtain pure phase g-C 3 N 4 Powder, the pure phase g-C 3 N 4 Dissolve the powder in deionized water, add 10mL of a certain concentration of H 2 SO 4 The solution was stirred ultrasonica...

Embodiment 1

[0042] Step 1, 6mmol Bi(NO 3 ) 3 ·5H 2 O dissolved in 35 mL of HNO with a concentration of 1 mol / L 3 solution, after stirring for 30min, add 6mmol NH 4 VO 3 , stirred for 120min to form a precursor solution, and the precursor solution was hydrothermally reacted at 65°C for 14h to prepare BiVO 4 Precipitation, washing the precipitate with alcohol and water for later use;

[0043] Step 2, CO(NH 2 ) 2 Raise the temperature to 540°C at a heating rate of 4.5°C / min, and then cool down to 350°C to obtain a pure phase g-C 3 N 4 Powder, the pure phase g-C 3 N 4 Dissolve the powder in deionized water, add 10 mL of H with a concentration of 0.5 mol / L 2 SO 4 The modified g-C was obtained by ultrasonic stirring for 3 h 3 N 4 Powder, washed with alcohol and water for later use;

[0044] Step 3, 0.05g modified g-C 3 N 4 Dissolve in 40mL deionized water, stir, and sonicate for 3.0 h until uniform, to obtain negatively charged g-C 3 N 4 solution and subjected to 25min ultrav...

Embodiment 2

[0048] Step 1, 6mmol Bi(NO 3 ) 3 ·5H 2 O dissolved in 35 mL of HNO with a concentration of 1 mol / L 3 solution, after stirring for 30min, add 6mmol NH 4 VO 3 , stirred for 120min to form a precursor solution, and the precursor solution was hydrothermally reacted at 70°C for 15h to prepare BiVO 4 Precipitation, washing the precipitate with alcohol and water for later use;

[0049] Step 2, CO(NH 2 ) 2 Raise the temperature to 550°C at a rate of 5°C / min, then cool down to 350°C to obtain a pure phase g-C 3 N 4 Powder, the pure phase g-C 3 N 4 Dissolve the powder in deionized water, add 10mL of 1mol / L H 2 SO 4 The modified g-C was obtained by ultrasonic stirring for 3.5h 3 N 4 Powder, washed with alcohol and water for later use;

[0050] Step 3, 0.1g modified g-C 3 N 4 Dissolve in 40mL deionized water, stir, and sonicate for 3.0h until uniform to obtain negatively charged g-C 3 N 4 solution and subjected to 35min ultraviolet light to obtain negatively charged g-C...

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Abstract

The present invention provides a graphite-like carbon nitride-(110) crystal plane bismuth vanadate Z-type heterojunction photocatalyst and its preparation method and application, comprising the following steps: Step 1, preparing exposed (010) crystal plane BiVO 4 powder, preparation H 2 SO 4 Modified g-C 3 N 4 Powder; step 2, expose the (010) crystal plane BiVO 4 The powder is added to water and exposed to ultraviolet light; the modified g‑C 3 N 4 The powder is dissolved in water and subjected to ultraviolet light; step 3, the UV-treated BiVO 4 The negatively charged g‑C of the solution is added to the UV light 3 N 4 The precursor solution is obtained in the solution, and the precursor solution is subjected to ultraviolet light to obtain g-C 3 N 4 ‑(110) crystal plane BiVO 4 Z-type heterojunction photocatalyst powder. The catalyst of the present invention increases the response range of visible light, delays the recombination rate of electrons and holes, improves the separation efficiency of carriers, and improves the BiVO 4 Photocatalytic performance of composite photocatalysts.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to bismuth vanadate (g-C 3 N 4 -(110) crystal plane BiVO 4 ) Z-type heterojunction photocatalyst and its preparation method and application. Background technique [0002] In recent years, the rapid development of industry has increased human demand for energy, leading to energy depletion and environmental crisis. Water resource pollution caused by excessive use of fossil resources has threatened the survival of human beings. Semiconductor photocatalysis has greater advantages than traditional pollution purification technologies. [0003] Bismuth vanadate (BiVO 4 ) mainly has three crystal structures, namely tetragonal scheelite structure, tetragonal zircon structure and monoclinic scheelite structure. Tetraphase BiVO 4 The main absorption band of BiVO is in the ultraviolet region, while the monoclinic BiVO 4 There are not only absorption bands in the ultraviolet region, bu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J37/34C02F1/30C02F101/30C02F101/34C02F101/38
CPCB01J27/24B01J35/004B01J37/343B01J37/345C02F1/30C02F2101/30C02F2101/308C02F2101/34C02F2101/38C02F2305/10
Inventor 谈国强党明月史妮妮王敏王颖任慧君夏傲
Owner 陕西东尚智新科技有限公司
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