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A method of bonding monocrystalline silicon and sapphire

A monocrystalline silicon and sapphire technology, which is applied in welding equipment, photoplate process of patterned surface, instruments, etc., can solve problems such as internal stress change, bonding surface cracking, bonding surface is not firm, etc., to solve cracking, high The effect of strength, good strength

Active Publication Date: 2020-12-08
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Among the current bonding methods, the use of potassium hydroxide solution for hydroxide catalyzed bonding is a relatively good choice. However, for samples that need to be used in low temperature environments, this bonding method cannot solve the problem during the cooling and heating process. The problem of cracking of the bonding surface due to internal stress changes caused by different thermal expansion coefficients of different materials
In addition, for monocrystalline silicon or sapphire whose polishing flatness is not good enough (higher than 250nm), when using potassium hydroxide solution to bond the two, the bonding surface will not be firm due to pits on the surface to be bonded

Method used

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  • A method of bonding monocrystalline silicon and sapphire

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0030] A method for bonding monocrystalline silicon and sapphire provided by the invention comprises the following steps:

[0031] In a clean environment, take an appropriate amount of sodium silicate solution adhesive and drop it on the surface of the monocrystalline silicon to be bonded, and then attach the surface of the sapphire to be bonded to the surface of the monocrystalline silicon to b...

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Abstract

The invention belongs to the field of material bonding, and particularly relates to a method for bonding single crystal silicon and sapphire. The single crystal silicon and the sapphire are bonded bya sodium silicate solution bonding agent. Through adoption of the method, the single crystal silicon and the sapphire can be bonded effectively, so that bonding is stable and precise; a bonding surface can withstand a low temperature cycle being as low as 6K; and the problem of cracking of the bonding surface due to different thermal expansion coefficients of the single crystal silicon and the sapphire in the cooling and heating processes is solved.

Description

technical field [0001] The invention belongs to the field of material bonding, and more specifically relates to a method for bonding monocrystalline silicon and sapphire. Background technique [0002] Single crystal silicon has good light transmission performance in the 1.1μm ~ 6.7μm band, and has low mechanical loss and large Young's modulus. It can be used as a good optical material, especially in the low temperature operating environment of single crystal silicon near 124K and 17K The thermal expansion coefficient is 0, so single crystal silicon can be used as a reference cavity material for low-temperature ultra-stable lasers. In addition, single crystal silicon is also widely used in the fields of semiconductors and solar energy. [0003] The light transmission range of sapphire is 0.14 μm to 6.0 μm, and it has high hardness, high strength, high thermal conductivity, corrosion resistance, high resistivity and other properties, which makes it widely used in optics, mecha...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C3/00
CPCB81C3/001B81C2203/032
Inventor 张洁孙云龙叶艳霞石晓辉闫春杰陆泽晃
Owner HUAZHONG UNIV OF SCI & TECH
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