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A kind of preparation method of doped tin dioxide powder and doped tin dioxide powder obtained by the method

A technology of tin dioxide and powder, which is applied in the field of functional powder material processing, can solve the problems of increased resistance of gas-sensitive materials, increased overall power consumption of the device, and fewer surface active sites, so as to achieve improved sensitivity and convenient Circuit resolution, wide-ranging effects

Active Publication Date: 2022-08-09
GUANGZHOU AOSONG ELECTRONIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Direct use of undoped tin dioxide as a gas-sensitive material will cause the following problems: 1. The surface active sites of undoped tin dioxide powder are less, and the sensitivity is low when reacting with the gas in the ambient atmosphere , affects circuit detection, requires a higher resolution to detect resistance changes, greatly increases the overall power consumption of the device, is not conducive to portable design; At high temperature, the crystal particles continue to grow, causing the resistance of the gas-sensitive material to increase continuously, and the long-term stability is poor; 3. The semiconductor metal oxide gas sensor generally has the problem of poor selectivity, mainly because tin dioxide itself is a general sensitive material. Capable of adsorbing various reducing or oxidizing gases

Method used

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  • A kind of preparation method of doped tin dioxide powder and doped tin dioxide powder obtained by the method
  • A kind of preparation method of doped tin dioxide powder and doped tin dioxide powder obtained by the method
  • A kind of preparation method of doped tin dioxide powder and doped tin dioxide powder obtained by the method

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preparation example Construction

[0033] A preparation method of doped tin dioxide powder, comprising:

[0034] Dispersion step: take the tin dioxide powder and dissolve it in an ether solvent, the powder particle size of the tin dioxide powder is 25-500nm, and the mass ratio of the tin dioxide powder and the ether solvent is 1:(3- 5), and add sodium borohydride and soluble metal salts, soluble metal salts include soluble Pd 2+ Salt, soluble Sb 3+ Salt and Soluble Ag + At least one of the salts, the amount of soluble metal salt added is 0.5-2%wt of the mixed solution, and the ratio of the mass of sodium borohydride to the tin dioxide powder is (7-12):100 to obtain the mixed solution;

[0035] One reduction step: stir and disperse the mixed solution. The stirring and dispersing speed is 300-500rpm, and the time is 4-8h. At 20°C, let it settle for at least 12h, and keep it at 50-80°C for 1-3h. The solvent is completely volatilized, then the temperature is raised to 180-300°C for 1-2 hours, then the temperatur...

Embodiment 1

[0039] A preparation method of doped tin dioxide powder, comprising:

[0040] Dispersion step: take 10g of tin dioxide powder and dissolve it in 50mL of ether. 3 ) 2 , 0.08g Sb(NO 3 ) 3 and 0.15g Ag NO 3 , get the mixture;

[0041] A reduction step: the mixture is stirred and dispersed, the speed of stirring and dispersing is 350 rpm, the time is 4.5 hours, and it is allowed to settle at 20 °C for at least 12 hours, and the temperature is kept at 60 °C for 2 hours to make the solvent completely volatilize, and then the temperature is raised to 200°C for 1.8h, then heated to 580°C for 4h, and the mixed powder was obtained after cooling;

[0042] Secondary reduction step: The mixed powder is ground and heated in gas H 2 calcined under the same conditions, the calcination temperature is 300 °C, and the time is 5 h to obtain the doped tin dioxide powder.

Embodiment 2

[0044] A preparation method of doped tin dioxide powder, comprising:

[0045] Dispersion step: take 8g of tin dioxide powder and dissolve it in 45mL of ether. 3 )2 , 0.08g Sb(NO 3 ) 3 and 0.08g AgNO 3 , get the mixture;

[0046] One reduction step: the mixture is stirred and dispersed, the stirring and dispersing speed is 350rpm, the time is 5h, the sedimentation is at least 12h at 20°C, and the solvent is kept at 70°C for 2h to completely volatilize the solvent, and then the temperature is raised to 250°C. ℃ for 1.5h, then the temperature was raised to 600℃ for 4h, and the mixed powder was obtained after cooling;

[0047] Secondary reduction step: The mixed powder is ground and heated in gas H 2 calcined under the conditions of 350 °C for 4 h at a calcination temperature of 4 h to obtain doped tin dioxide powder.

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Abstract

The present invention discloses a preparation method doped tin oxide powder and a doped tin oxide powder obtained through this method.The restoring agent and soluble metal salt are obtained by the mixture; once the restoration step: stir the mixture and disperse, settle down at least 12h, then heat up 1 to 3h under the condition of 50‑80 ° C, and then increase to 180‑300 to 180‑300Insulation of 1‑2h, then heating to 550‑650 ° C insulation 3‑6h, mixed powder after cooling; secondary restore steps: grind the mixed powder and in the gas H 2 Burn under the conditions to obtain a doped tin oxide powder; this method uses tin dioxide as the raw material, which solves the instability of the reaction process with tin salt as the raw material in the existing technology.Type -type metal, the obtained doped tin powder powder is widely used.

Description

technical field [0001] The invention relates to a preparation method of doped tin dioxide powder and the doped tin dioxide powder obtained by the method, and belongs to the technical field of functional powder material processing. Background technique [0002] Tin dioxide is an important oxide semiconductor material with a rutile crystal structure, which has been widely used in solar cells, electrothermal materials, transparent conductive electrode materials and gas-sensing materials. Due to the presence of oxygen vacancies or metal interstitial atoms, SnO 2 It is generally an N-type conductive semiconductor material. When the gas in the ambient atmosphere is adsorbed to this SnO 2 When the surface of the oxide film is exposed, the resistance of the oxide film changes due to charge transfer. Based on this principle, tin dioxide can be used to detect changes in organic volatile gases (VOC gases) in ambient gases. [0003] The characteristic parameters of gas sensor include...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/02
CPCY02P70/50
Inventor 张宾赵罗恒
Owner GUANGZHOU AOSONG ELECTRONIC CO LTD