Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method of large-area and uniform nanometer dipolymer array

A dimer, large-area technology, applied in nanotechnology for materials and surface science, nanostructure fabrication, nanotechnology, etc., can solve problems such as limited implementation and operation, difficult assembly, limited template assembly, etc., Achieve good stability and repeatability, reduce complexity, and increase stability

Active Publication Date: 2019-05-14
XIAMEN UNIV
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The advantages of this method are convenience, speed, and large area; but the problem is that it is limited by the assembly of the template, and it is difficult to achieve uniformity in a large area, especially for polystyrene spheres with smaller particle sizes. Uniform assembly over large areas
But this advantage is also limited by the specific implementation and operation
The large area of ​​the structure depends on the area that the interference pattern can cover. If the laser beam is used for direct interference, the area covered by the interference pattern is only a few millimeters, which cannot be called a large area; the uniformity of the structure is more affected. Factors, the most important of which are the quality of the laser spot, the stability of the entire optical system, and the uniformity of the substrate itself; in addition, the period of the structure depends on the wavelength of the laser and the angle between the laser interference, which is difficult to achieve Preparation of Nanoscale Structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of large-area and uniform nanometer dipolymer array
  • Preparation method of large-area and uniform nanometer dipolymer array
  • Preparation method of large-area and uniform nanometer dipolymer array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] With reference to the above method, the substrate is a single crystal silicon wafer, the thickness of the stripped photoresist is 150nm, the thickness of the negative photoresist is 500nm, the total laser power is 110mW, and the exposure time is 10s. The obtained photoresist template is as follows: Figure 5 as shown in b. Gold was deposited by electron beam vacuum deposition technology with a thickness of 200nm, and the nanodimer array obtained after removing the template was as follows Figure 5 As shown in f, the array period is 600 nm, and the radius of the obtained petal-shaped nanopillars is about 100 nm. The resulting nanodimer arrays were applied to surface plasmon structures.

Embodiment 2

[0052] With reference to the above method, the substrate is a glass slide, the thickness of the stripped photoresist is 100nm, the thickness of the negative photoresist is 300nm, the total laser power is 110mW, and the exposure time is 15s. The photoresist template obtained is as follows: Figure 5 as shown in c. Deposition of TiO by magnetron sputtering technique 2 , with a thickness of 50nm, the nanodimer array obtained after removing the template is as follows Figure 5 As shown in g, the array period is 600 nm, and the radius of the obtained petal-shaped nanopillars is about 80 nm. The obtained nanodimer arrays are applied in various solar cells, such as fuel-sensitized solar cells, perovskite solar electromagnetics, etc.

Embodiment 3

[0054] With reference to the above method, the substrate is a flexible polyethylene (PE) film, the thickness of the stripped photoresist is 150nm, the thickness of the negative photoresist is 800nm, the total laser power is 110mW, and the exposure time is 20s. Glue template such as Figure 5 shown in d. Ag was deposited by electron beam vacuum deposition technology with a thickness of 400nm, and the nanodimer array obtained after removing the template was as follows: Figure 5 As shown in h, the array period is 600 nm, and the radius of the obtained petal-shaped nanocolumns is about 60 nm. The obtained nanodimer arrays can be used in surface plasmon optics or nano-optics.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
radiusaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a large-area and uniform nanometer dipolymer array. The preparation method of the large-area and uniform nanometer dipolymer array comprises sequentially spin-coating a substrate sequentially with a peelable photoresist layer and a negative photoresist layer, performing patterning exposure, development and fixation on the negative photoresist layer to obtain a petal-like nano through hole array arranged in a hexagonal mode, etching out the peelable photoresist layer under through holes, performing deposition of materials by taking an obtained pattern as a template, removing photoresist to obtain the large-area and uniform hexagonal petal-like nanometer dipolymer array. The obtained large-area and uniform hexagonal petal-like nanometer dipolymer array achieves the properties of dipolymer units as well as the characteristics of periodic arrays, thereby having a broad application prospect. The preparation method of the large-area and uniformnanometer dipolymer array is simple in operation, good in morphology controllability, repeatable, capable of easily preparing large-area and uniform arrays and applicable to practical application.

Description

technical field [0001] The invention belongs to the technical field of nano-processing, and in particular relates to a method for preparing a large-area, uniform hexagonally arranged dimer array. Background technique [0002] Due to its unique scale effect, nanostructures exhibit special properties in terms of light, electricity, force, and heat that are completely different from bulk materials. Moreover, the properties of nanostructures can be adjusted by adjusting the shape, size, and material. With the widespread use of nanostructures in various optical and electrical devices, higher and higher requirements are placed on nanofabrication technology. The periodic two-dimensional nano-dimer (nano-dimer) array not only has the properties of nano-dimer units, but also has the interaction between dimer units, so it has more flexible and tunable optical properties. Because of this, nanodimer arrays are widely used in the fields of surface plasmon optics, nanoelectrodes, surfac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B1/00B82B3/00B82Y30/00B82Y40/00
Inventor 任斌刘博文刘守
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com