Polymer film containing alkene telluride, and preparation method and application of polymer film

A polymer film and polymer technology, applied in the field of lasers, can solve problems such as unfavorable large energy, high-power ultra-short pulses, limited output, and inability to work normally, achieve excellent light absorption efficiency and saturable absorption characteristics, and improve stability. and service life, the effect of improving nonlinear optical performance

Pending Publication Date: 2019-05-31
SHENZHEN HANGUANG TECH CO LTD
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, graphene has the advantages of high carrier mobility, wide-band response, and large specific surface area, but its absorption efficiency is relatively low; the adjustable bandgap characteristics of molybdenum disulfide and better absorption at specific wavelengths make up for the advantages of graphene. Insufficient, but due to its large band gap and complicated preparation process, its output is limited; black phosphorus is suitable for working in the near-infrared band, but it is sensitive to the surrounding environment, has poor stability, and cannot work stably for a long time. It can't work normally in special environments such as semiconductor saturable absorption mirrors with a small working wavelength range, which is complicated and expensive to manufacture
In order to increase the interaction strength of these two-dimensional materials with light, people have used saturable absorbers of two-dimensional materials based on D-type fibers and tapered fibers to generate stable ultrashort pulse lasers, but these structures are accompanied by relatively Large insertion loss is not conducive to the generation of large energy and high power ultrashort pulses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polymer film containing alkene telluride, and preparation method and application of polymer film
  • Polymer film containing alkene telluride, and preparation method and application of polymer film
  • Polymer film containing alkene telluride, and preparation method and application of polymer film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0054] The second aspect of the present invention provides a method for preparing a tellurene-containing polymer film, comprising:

[0055] Provide a polymer and tellurene dispersion, and mix the polymer and tellurene dispersion uniformly to obtain a mixed solution;

[0056] The mixed liquid is dropped onto the substrate, and after being vacuum-dried at 20° C. to 50° C. to form a film on the substrate, and then peeled off to obtain a tellurene-containing polymer film.

[0057] In the embodiment of the present invention, the tellurene dispersion liquid is mixed with the polymer, and the mixed liquid is obtained after ultrasonic dispersion.

[0058] In the embodiment of the present invention, the tellurene-containing polymer film is formed by mixing the tellurene dispersion liquid with the polymer, stirring uniformly, dripping the solution, and drying.

[0059] In an embodiment of the present invention, the solute of the tellurene dispersion may be, but not limited to, telluren...

Embodiment 1

[0091] A kind of saturable absorber preparation method of tellurene-containing polymer film

[0092] Provide a solution containing tellurene nanosheets and polyvinylpyrrolidone, mix 1mg of polyvinylpyrrolidone powder and 10mL of a solution containing tellurene nanosheets, and stir well and uniformly for 1 hour to obtain a mixed solution; drop the mixed solution onto a polytetrafluoroethylene liner After standing and drying at 40°C under vacuum for 2 hours, a tellurene-containing polymer film was formed on the polytetrafluoroethylene substrate, and the tellurene-containing polymer film was peeled off from the polytetrafluoroethylene substrate. , to obtain tellurene-containing polymer films.

[0093] The obtained tellurene-containing polymer film is cut, and the area obtained by cutting is similar to the area of ​​the end face of the optical fiber, and is smaller than the area of ​​the end face of the optical fiber as far as possible. The cut tellurene-containing polymer film i...

Embodiment 2

[0098] A kind of saturable absorber preparation method of tellurene-containing polymer film

[0099] Provide tellurene-containing nanosheet solution and polystyrene, the lateral dimension of tellurene nanosheet is 8 μm, the thickness is 40nm, the concentration of tellurene-containing nanosheet solution is 0.2mg / mL, 1mg polystyrene and 15mL tellurene-containing The solution of nanosheets was mixed and stirred uniformly for 2 hours to obtain a mixed solution; the mixed solution was dropped on a polytetrafluoroethylene substrate, and after standing and drying at 30°C for 2.5 hours under vacuum conditions, the mixed solution was obtained on the polytetrafluoroethylene substrate. A tellurene-containing polymer film is formed on the substrate, and the tellurene-containing polymer film is peeled off from the polytetrafluoroethylene substrate to obtain a tellurene-containing polymer film with a thickness of 3 μm.

[0100] The tellurene-containing polymer film is transferred to the end...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a polymer film containing alkene telluride. The polymer film is used for a saturable absorber and comprises a polymer film base and the alkene telluride doped in the polymer film base, wherein the alkene telluride has excellent light absorption efficiency and saturated absorption characteristics. The alkene telluride and light are resonantly enhanced by the aid of quantum confinement effects and edge effects, so that laser in an energy band is strongly absorbed, the light absorption rate of the polymer film is one order of magnitudes higher than that of a conventional two-dimensional material, the alkene telluride distributed in the polymer film base can efficiently, uniformly and stably absorb the laser, the polymer film base is good in flexibility, the stability ofthe polymer film containing the alkene telluride is improved, the service life of the polymer film containing the alkene telluride is prolonged, and the polymer film can achieve an extensive application prospect in the saturable absorber and a passively mode-locked laser device.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a tellurene-containing polymer film and its preparation method and application. Background technique [0002] In the field of lasers, passive mode-locked lasers can provide high beam quality and energy, high stability, and excellent flexibility, designability, and system compatibility. Therefore, in the fields of national defense, scientific research, and industry It is widely used in China and has extremely high application value. [0003] The method to achieve passive mode-locking of lasers mainly includes the use of saturable absorbers. Currently, the materials of saturable absorbers include two-dimensional materials represented by graphene, molybdenum disulfide, and black phosphorus, and semiconductor saturable absorber mirrors. Among them, graphene has the advantages of high carrier mobility, wide-band response, and large specific surface area, but its absorption efficiency ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C08L39/06C08L33/12C08L25/06C08K3/02C08J5/18H01S3/098
Inventor 张晗尤凯熹宋宇锋
Owner SHENZHEN HANGUANG TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products