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A kind of manufacturing method of high-quality light-emitting diode

A technology of light-emitting diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, semiconductor devices, etc., can solve problems such as acid corrosion, material damage, and failure to be well suppressed, to achieve Effects of improving quality, avoiding damage, and suppressing erosion rate

Active Publication Date: 2021-06-15
深圳广盛浩科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a method for manufacturing high-quality light-emitting diodes, which has the advantages of environmental protection, safety, and high efficiency, and solves the problem of material damage to the human body and acid erosion of silicon in the manufacturing process of the existing light-emitting diodes. surface, can not be well suppressed and other issues

Method used

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Embodiment Construction

[0034] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] The present invention provides a kind of technical scheme: comprise the steps:

[0036] S1. Wafer inspection: Including wafer type, wafer thickness, wafer state and silicon wafer resistivity, check whether the wafer is N-type or P-type, specifically by heating needle A, electrons from point A diffuse to point B , the potential of point A is higher than that of point B, and the pointer of the galvanometer deviates to the right, it can be determined that the silicon wafe...

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Abstract

The invention discloses a method for manufacturing a high-quality light-emitting diode, comprising the following steps: S1, inspection of silicon wafers; S2, cleaning of silicon wafers; S3, polishing of silicon wafers; S4, diffusion; S5, thermal oxidation; S6, photolithography; S7 , alloy sintering; S8, vacuum coating; S9, hypotenuse angle; S10, welding; S11, pickling; S12, white glue curing; S13, molding; S14, post-processing, a total of fourteen steps; , through thermal oxidation, the silicon dioxide layer on the silicon wafer is engraved with a selective diffusion area, and impurities can be diffused into the silicon wafer in this area, and the pneumatic measuring instrument (non-contact) is used for measurement, which can avoid damage to the surface of the silicon wafer Damage fundamentally improves the quality of raw material silicon wafers. Through mechanical polishing of silicon dioxide, SiO2 colloid is used to produce mechanical friction on silicon wafers to achieve the polishing effect of removing the surface damaged layer.

Description

technical field [0001] The invention relates to the technical field of diode manufacture, in particular to a method for manufacturing a high-quality light-emitting diode. Background technique [0002] A diode is a two-terminal device with unidirectional conduction. It is divided into electronic diodes and crystal diodes. Electronic diodes are less efficient than crystal diodes due to the heat loss of the filament, so they are rarely seen now. They are more common and commonly used. is a crystal diode. The unidirectional conduction characteristics of diodes, semiconductor diodes are used in almost all electronic circuits, it plays an important role in many circuits, it is one of the earliest semiconductor devices, and its applications are also very wide. In the manufacturing process of diodes, the cleaning effect of raw material silicon is average, and the Au and Pt metals on the silicon surface are difficult to clean, and it is easy to cause scratches on the surface of sili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/02H01L21/22H01L21/304H01L21/66
Inventor 邓博强
Owner 深圳广盛浩科技有限公司
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