LED epitaxial structure and preparation method thereof, and LED chip

Abstract

The invention provides an LED epitaxial structure and a preparation method thereof, and an LED chip. The LED epitaxial structure includes a first sub-epitaxial structure, an N-type doping structure and a second sub-epitaxial structure which are successively superposed on a substrate; the N-type doping structure includes a first N-type doping layer, an electron flow diffusion layer and a second N-type doping layer; and the electron flow diffusion layer is doped with N-type ions. The concentrations of the ions doped in the first and second N-type doping layers are greater than that of the N-typeions of the electron flow diffusion layer, so that the electron mobility at the internal of the electron flow diffusion layer can be enhanced, the effective areas of electron migration in the N-typedoping structure can be increased, and therefore, the recombination rates of holes and electrons can be enhanced, and LED luminous efficiency can be enhanced as well.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to an LED epitaxial structure, a preparation method thereof, and an LED chip. Background technique [0002] A light emitting diode (Light Emitting Diode, referred to as LED) is a semiconductor solid-state light-emitting device, which uses a semiconductor P-N junction as a light-emitting material, and can directly convert electrical energy into light energy. Among various semiconductor materials, III-V compound semiconductors represented by gallium nitride (GaN) have the advantages of good heat dissipation, ability to carry large currents, high luminous intensity, low power consumption, and long life, making light-emitting diodes In particular, high-brightness blue light-emitting diodes and white light-emitting diodes are widely used in general lighting, landscape lighting, display backlighting, and automotive lighting. [0003] Such as figure 1 As show...

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Problems solved by technology

And in the LED hole mobility rate (about 10cm 2 / Vs) is much lower than the electron mobility (about 300cm 2 / Vs), so, in the LED, the problem of unbalanced majority carriers on the side of the multi-quantum well layer 60 near the N-type GaN layer 40 and the side of the multi-quantum well layer 60 near the P-type GaN layer 80 is likely to occur, so that The recombination rate of holes and electrons is low, which seriously limits the improvement of LED luminous efficiency

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