White light organic light emitting diode based on interface complementary color excimer emission
A technology of light-emitting diodes and color exciters, which is applied in the manufacture of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc. Low cost, favorable for low cost, simple device fabrication process
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[0060] During the preparation process of the device, the evaporation rate of the material and the thickness of the evaporation film layer are monitored by a quartz crystal frequency meter connected outside the vacuum chamber. Among them, organic materials, MoO 3 The evaporation rates of LiF, LiF, and Al are about 1Å / s, 0.3Å / s, 0.1Å / s, and 3Å / s, respectively. The overlapping part of the ITO glass and the aluminum cathode is used as the effective light-emitting layer of the device, and the effective light-emitting area of the device is 3mm×3mm.
[0061] figure 1 and figure 2 The device structure diagram of the white organic light-emitting diode based on the interface complementary color exciton emission of the present invention is given. For the convenience of description, the present invention classifies white light OLEDs into type I devices ( figure 1 ) and Type II devices ( figure 2 ).
[0062] Among them, the structure of the I-type device is: ITO (anode) / hole inje...
Embodiment 1
[0070] The present invention needs to prepare excito white light OLED, and excito white light emission is compounded by monochromatic excito emission of different colors complementary in the same device functional layer. In order to illustrate the feasibility of the excimer-based white OLED of the present invention, the feasibility of the complementary-color monochromatic-light excimer-based OLED is firstly verified.
[0071] The exciplex blue light device B was prepared by the above-mentioned device preparation method, and the device structure is: ITO / MoO 3 (3nm) / TAPC (40nm) / TPBi (50nm) / LiF (1nm) / Al (200nm).
[0072] image 3 The normalized electroluminescence spectra of the blue-light exciplex device B of this embodiment under different voltages are given.
[0073] It can be seen that the electroluminescence peak of the device is located in the blue light band of 450nm, which has a very obvious red shift compared with the intrinsic luminescence peak (380-400nm) of the ...
Embodiment 2
[0075] The easiest way to fabricate white OLEDs is to combine the simultaneous emission of blue and yellow complementary light into the device.
[0076] The device in Example 1 achieves excellent blue excimer light emission, and in order to realize white excimate light emission, complementary yellow excimer light emission is also required.
[0077] Keeping the hole-transporting material of device B unchanged, changing the electron-transporting material that forms the exciplex, using the same preparation method as in Example 1, the exciplex yellow light device Y was prepared, and the device structure was: ITO / MoO 3 (3nm) / TAPC (40nm) / POT2T (10nm) / TPBi (40nm) / LiF (1nm) / Al (200nm), it is expected that the exciplex device can achieve excimer yellow light emission.
[0078] according to Figure 4 It can be seen from the normalized electroluminescence spectra of the yellow exciplex device Y at different voltages that the device has indeed achieved yellow light emission, and the emi...
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