Preparation method of bismuth oxygen sulfur two-dimensional material and photoelectric detector

A technology of photodetectors and two-dimensional materials, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor chemical stability and electron mobility, high reaction temperature, unsuitable bandgap, etc., and achieve good photoelectric detection The effect of performance and good application prospects

Active Publication Date: 2019-06-14
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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Problems solved by technology

[0004] However, at the same time, these two-dimensional materials still have many disadvantages: unsuitable band gap, poor chemical stability and electron mobility, so it is necessary to seek other new two-dimensional materials to obtain better performance and devices stability
There have been reports on the preparation of bismuth oxygen sulfur two-dimensional materials and their photodetectors by chemical vapor deposition, and the purity and crystallinity of the two-dimensional materials are good, but th

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  • Preparation method of bismuth oxygen sulfur two-dimensional material and photoelectric detector
  • Preparation method of bismuth oxygen sulfur two-dimensional material and photoelectric detector
  • Preparation method of bismuth oxygen sulfur two-dimensional material and photoelectric detector

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[0026] The invention discloses a bismuth oxysulfide (Bi 2 o 2 S) the preparation method of two-dimensional material, comprises the steps:

[0027] Step 1: Disperse thiourea in deionized water, stir magnetically until completely dissolved, then add ammonium bismuth citrate;

[0028] Step 2: Stir the solution in step 1 evenly, then add potassium hydroxide at a concentration of 0.2 to 4.0 mol / L, and stir at room temperature for 1 to 3 hours;

[0029] Step 3: Transfer the stirred mixed solution to a high-temperature-resistant p-polyphenylene (PPL) reactor, and keep it warm at 25 to 220°C for 3 to 48 hours; Step 3 uses a one-step hydrothermal method for the preparation of materials ;

[0030] Step 4: Wash the product alternately with two solvents of deionized water or absolute ethanol, and centrifuge at a speed of 3000 to 10000 rpm for 3 to 8 minutes, and alternately wash 2 to 6 times), thereby preparing Bi 2 o 2 S two-dimensional material;

[0031] As a preferred embodiment,...

Embodiment 1

[0039] Example 1: 12 mmol (5.821 g) of bismuth nitrate pentahydrate was weighed and dissolved in 50 ml of deionized water, and magnetically stirred at room temperature until uniformly mixed. Then add 6mmol (0.457g) of thiourea, and continue to stir until the solution is evenly mixed. Then add a certain concentration of KOH, continue to stir until the solution is evenly mixed, then transfer the above solution to the lining of a 100ml reactor, add deionized water to adjust the solution to 60% of the dissolved volume of the reactor, and finally put the reactor into oven. After the experiment, the obtained precipitate was alternately centrifuged with absolute ethanol and deionized water for 6 times, and centrifuged at 4500 rpm for 5 minutes. After repeated 6 times of cleaning, it was dried in an oven and ground into powder. It can be found that using bismuth nitrate pentahydrate as bismuth source, the prepared Bi 2 o 2 The morphology of the S product is long-sided, but the late...

Embodiment 2

[0040] Example 2: 6 mmol (0.457 g) of thiourea was weighed and dissolved in 50 ml of deionized water, and magnetically stirred at room temperature until uniformly mixed. Then add 12mmol (5.426g) of ammonium bismuth citrate, and continue to stir until the solution is evenly mixed. Then add a certain concentration of KOH, continue to stir until the solution is evenly mixed, then transfer the above solution to the lining of a 100ml reactor, add deionized water to adjust the solution to 60% of the dissolved volume of the reactor, and finally put the reactor into oven. After the experiment, the obtained precipitate was alternately centrifuged with absolute ethanol and deionized water for 6 times, and centrifuged at 4500 rpm for 5 minutes. After repeated 6 times of cleaning, it was dried in an oven and ground into powder. figure 1 It is the XRD pattern that the embodiment of the present invention provides. It can be found that when bismuth ammonium citrate is used as the bismuth s...

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Abstract

The invention provides a preparation method of a bismuth oxygen sulfur two-dimensional material and a photoelectric detector. The preparation method comprises the steps of 1, dispersing thiourea in deionized water, and adding ammonium bismuth citrate after the thiourea is completely dissolved by magnetic stirring; 2, adding potassium hydroxide after uniform stirring of a solution in the step 1, and performing stirring for 1-3 hours under a room temperature, wherein the concentration is 0.2-4.0mol/L; 3, transferring the stirred mixed solution to a polyphenylene reaction kettle resistant to hightemperature, and performing heat preservation for 3-48 hours under 25-220 DEG C; and 4, alternatively washing the product with two solvents comprising the deionized water or absolute ethyl alcohol, and performing alternative washing for 2-6 times so as to prepare a Bi2O2S two-dimensional material. The preparation method has the beneficial effects that the prepared Bi2O2S two-dimensional materialhas favorable photoelectric property, and the fabricated photoelectric detector has the characteristics of relatively high light dark current ratio, favorable cycle stability and the like.

Description

technical field [0001] The invention relates to a preparation process of a two-dimensional material, in particular to a preparation method of a bismuth oxygen sulfur two-dimensional material and a photoelectric detector. Background technique [0002] In today's world, materials, as one of the pillars of social development, play an irreplaceable role in the development of economy, technology, energy and information. With the continuous improvement of the precision of integrated circuits, the development of devices tends to be miniaturized, highly integrated, high storage density, fast transmission, large capacity and intelligent control, so the requirements for the performance and size of materials are becoming more and more stringent. Two-dimensional materials originated in the 1980s and have developed rapidly in recent years, becoming one of the hottest research fields. Two-dimensional materials mean that electron transport is limited to a two-dimensional plane, and electr...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/101H01L31/108H01L31/18H01L21/02
CPCY02P70/50
Inventor 汪桂根李梦秋
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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