Gallium nitride-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a production method thereof and belongs to the technical field of a semiconductor. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, and a low temperature buffer layer, a three-dimensional nucleating layer, two-dimensional recovery layer, an undoped GaN layer, an N-type layer, multiple quantum well layers, an electron barrier layer and a P-type layer which are grown on the substrate in sequence. Multiple quantum well layers comprise a plurality of quantum well layers anda plurality of quantum barrier layers which are grown alternately. Each quantum barrier layer comprises a first sub-layer, a second sub-layer and a third sub-layer which are laminated in sequence. The first sub-layers, the second sub-layers and the third sub-layers are BGaN layers. Mg is doped in the second sub-layers. According to the gallium nitride-based light emitting diode epitaxial wafer provided by the invention, electron overflow and hole injection can be improved, so internal quantum efficiency of an LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate, a low-temperature buffer layer, a three-dimensional nucleation layer, a two-dimensional recovery layer, and an undoped GaN layer stacked on the substrate in sequence. , an N-type layer, a multi-quantum well layer, an electron blocking layer and a P-type layer, wherein the multi-quan...

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Problems solved by technology

The compressive stress will generate a piezoelectric polarization electric field, which will cause the inclination of the energy band, which is not conducive to blocking the overflow of electrons to the P-type layer. At the same time, it will also affect the injection of holes into the multi-quantum well layer, so that the wave functions of electrons and holes overlap. decrease, resulting in a decrease in the internal quantum efficiency of the LED

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