Gallium nitride-based light-emitting diode epitaxial wafer and manufacturing method thereof
A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of decreased internal quantum efficiency, unfavorable electron overflow, energy band tilt, etc., so as to improve internal quantum efficiency and improve energy efficiency. Band inclination, the effect of alleviating the bending of the energy band
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[0030] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0031] figure 1 It is a schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention, as shown in figure 1 As shown, the light-emitting diode epitaxial wafer includes a substrate 1, and a low-temperature buffer layer 2, a three-dimensional nucleation layer 3, a two-dimensional recovery layer 4, an undoped GaN layer 5, and an N-type layer 6 grown on the substrate 1 in sequence. , multi-quantum well layer 8 , electron blocking layer 9 , and P-type layer 10 .
[0032] The multi-quantum well layer 8 includes a plurality of quantum well layers 81 and a plurality of quantum barrier layers 82 grown alternately, and each quantum barrier layer 82 includes a firs...
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