Self-limiting cyclic etching method for carbon-based films
A technology of etching and etching away, which is applied in chemical instruments and methods, cleaning methods and appliances, semiconductor/solid-state device manufacturing, etc., and can solve problems such as CD loss
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Embodiment 1
[0086] The placement of embodiment 1 sample sample
[0087] Figure 7 is a photograph showing a pair of sample coupons placed in a horizontal test bench plasma reactor according to an embodiment of the present disclosure. Plasma reactors have significantly different plasma and neutral species densities for different sections of the plasma reactor. The figure shows a first sample coupon in the top section near one edge of the plasma reactor and a second sample coupon in the middle section near the middle of the plasma reactor. In this test bench reactor, which has a rectangular shape, the plasma is roughly uniform in the middle of the reactor, but decays at the ends bounded by the quartz walls. The first sample coupon is placed near one of these quartz walls and thus receives less ion bombardment than the second sample coupon placed in the middle section. The sample coupons contained a three-layer mask pattern with a photoresist layer and a silicon-containing antireflective ...
Embodiment 2
[0088] Example 2 Comparative example
[0089] Figure 8A to Figure 8D A cross-sectional scanning electron microscope (SEM) image of the etched sample coupon is shown. 300 / 2 sccm Ar / O in continuous etch mode using photoresist / SiARC as mask 2 The OPL was etched with gas flow, plasma power of 100 W at 13 MHz, gas pressure of 60 mTorr, and exposure time of 125 s. Figure 8A and Figure 8B Cross-sectional SEM images of dense lines on the first sample and the second sample are shown. In all photomicrographs, the SiARC mask covers dense / dense lines. In the first sample / second sample, the OPL etching depth was 114.4 nm / 139.6 nm, respectively. Figure 8C and Figure 8D Cross-sectional SEM images from the sparse lines on the first and second samples are shown. In the first sample / second sample, the OPL etching depth was 127.3 nm / 162.5 nm, respectively. Figure 8A to Figure 8D The results in show that the global vertical etch rate non-uniformity (CDU) of the dense line is about 2...
Embodiment 3
[0090] Embodiment 3 Invention example
[0091] Figure 9A to Figure 9D A cross-sectional SEM image of an etched sample coupon according to an embodiment of the disclosure is shown. The OPL is etched using the photoresist / SiARC as a mask in a cyclic etch process in which etch cycles are performed multiple times. A complete etch consists of 65 steps, each of these steps consists of the following sub-steps: 1) using 300 sccm O 2 Process gas composed of gas, plasma power of 15W, gas pressure of 200mTorr, plasma exposure of exposure time of 0.5s; 2) vacuum cleaning step; 3) process gas composed of Ar gas of 300sccm, 100W Plasma exposure with plasma power, gas pressure of 60 mTorr, exposure time of 1 s; and 4) vacuum cleaning step. The purge is spread out such that no oxygen is present in the plasma reactor during step 3).
[0092] Figure 9A and Figure 9B Cross-sectional SEM images of dense lines on the first sample and the second sample are shown. In the first sample / secon...
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Abstract
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