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After-treatment method for QLED device

A technology of device and heat treatment, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., and can solve problems affecting the long-term efficiency and life of devices

Active Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art above, the purpose of the present invention is to provide a post-processing method for QLED devices, aiming to solve the problem of improving the efficiency of QLED devices in the early stage of device preparation by adding some active ingredients in the packaging resin, but these activities The components will have a quenching effect on the light emission of the device in the future, which will affect the long-term efficiency and life of the device

Method used

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  • After-treatment method for QLED device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Example 1: The quenching effect of carboxylic acid on the luminous efficiency of quantum dots

[0051] 1) Prepare a n-hexane solution of CdSe / ZnS quantum dots with a concentration of 15 mg / mL. The luminescence peak wavelength of quantum dots in n-hexane solution is 621 nm, and the quantum yield is 62%;

[0052] 2) Add 10, 50, 100, 200, 2000 ppm acetic acid by volume to the above CdSe / ZnS quantum dot n-hexane solution and mix thoroughly;

[0053] 3) Test the luminescence quantum yield of the mixed solution of quantum dots and acetic acid respectively, as shown in Table 1 below:

[0054] Table 1. Solution luminescence quantum yield

[0055] Acetic acid addition system percentage (ppm)

[0056] It can be seen from the above table that a very small amount of acetic acid directly contacts the quantum dots, which will have a significant luminous efficiency quenching effect on the quantum dots.

Embodiment 2

[0057] Example 2: Acceleration of Heating on the Beneficial Effect of Active Components in Improving Device Efficiency

[0058] 1) Add 20% by weight acrylic acid to the encapsulation resin;

[0059] 2) Encapsulate the existing green QLED with the above encapsulation resin and UV cure;

[0060] 3) In a nitrogen atmosphere, place the above green QLEDs at room temperature and heat them at 50°C and 90°C respectively;

[0061] 4) Observe the change (%) of the external quantum efficiency of green QLED with the change of processing time, as shown in Table 2 below:

[0062] Table 2. External quantum efficiency of green QLEDs

[0063] processing conditions

[0064] As can be seen from the above table, compared with QLED devices placed at room temperature, heating treatment can effectively increase the rate of device efficiency growth; and the higher the heating temperature and the longer the heating time, the more obvious the acceleration effect.

Embodiment 3

[0065] Example 3: Effects of Different Active Ingredient Concentrations on Device Efficiency Improvement under the Same Heating Conditions

[0066] 1) Add 5, 10, 20, 30, 40% by weight acrylic acid to the encapsulation resin;

[0067] 2) Encapsulate the existing green QLED with the above encapsulation resin and UV cure;

[0068] 3) All the above green QLEDs were heat treated at 50°C for 1 day in a nitrogen atmosphere;

[0069] 4) Observe the change in external quantum efficiency (%) of green QLED over time, as shown in Table 3 below:

[0070] Table 3. External quantum efficiency of green QLEDs

[0071] Acrylic acid concentration (%)

[0072] It can be seen from the above table that the addition concentration of acrylic acid in the range of 5-40% and combined with heat treatment can produce different degrees of beneficial effects of improving device efficiency.

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Abstract

The invention discloses an after-treatment method for a QLED device, which comprises the steps of providing a QLED device, wherein the QLED device includes a substrate and a quantum dot light-emittingdiode arranged on the substrate, the quantum dot light emitting diode is encapsulated by encapsulating resin, the encapsulating resin contains an active ingredient, and the active ingredient is unsaturated carboxylic acid and / or saturated carboxylic acid; carrying heating treatment on the QLED device; and performing vacuumizing treatment on the QLED device after carrying out heating treatment onthe QLED device. The after-treatment method can sufficiently remove the residual active ingredient after realizing beneficial effects of the device through the preparation steps of heating and vacuumizing, thereby ensuring the device not to be continuously affected by the active ingredient, and thus guaranteeing the life of the device while achieving high efficiency.

Description

technical field [0001] The invention relates to the field of QLED devices, in particular to a post-processing method for QLED devices. Background technique [0002] Quantum dot-based electroluminescence technology, also known as quantum dot light-emitting diode (QLED) technology, has received increasing attention in recent years due to its great potential as a new generation of display technology. The advantages of QLED display technology come from the unique nanometer properties of quantum dots, a special nanomaterial, such as continuously adjustable emission wavelength, narrow emission wavelength, high luminous intensity, long fluorescence lifetime, and high stability. The performance of QLED display devices, such as efficiency and lifespan, has also been steadily improved in recent years. [0003] The performance of QLED devices can be enhanced in a variety of ways. It was previously disclosed in the existing technical solutions that active ingredients such as unsaturat...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/52
Inventor 杨一行曹蔚然钱磊向超宇
Owner TCL CORPORATION