A Configurable Three-dimensional Microwave Filter Based on Coaxial Through-Silicon Vias
A technology of microwave filters and through-silicon vias, which is applied in semiconductor devices, electric solid-state devices, semiconductor/solid-state device components, etc., can solve problems such as low integration density and limited function expansion, and achieve low process cost and mutual The effect of short connection and high utilization efficiency
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Embodiment 1
[0046] See figure 1 and figure 2 , figure 1 It is a three-dimensional perspective view of a configurable three-dimensional filter based on coaxial silicon vias provided by an embodiment of the present invention, figure 2 yes figure 1 A cross-sectional view of the configurable 3D filter along line A-A in . The configurable three-dimensional microwave filter includes a ground layer 1 , a first interconnection layer 2 , a TSV capacitance layer 3 and a second interconnection layer 4 from top to bottom. The TSV capacitive layer 3 includes a substrate 31 and a plurality of TSV structures 6 penetrating the substrate 31 .
[0047]The first interconnection layer 2 is provided with a plurality of first connectors 21 arranged in parallel and penetrating the upper and lower surfaces of the first interconnection layer 2 , and the plurality of first connectors 21 realize the top ends between the corresponding TSV structures 6 Interconnection; the second interconnection layer 4 is pro...
Embodiment 2
[0065] On the basis of the above embodiments, this embodiment provides other structures and connection methods of the ground terminal 11, please refer to Figure 11 , Figure 11 It is a perspective view of another configurable three-dimensional filter based on coaxial silicon vias provided by an embodiment of the present invention. In this embodiment, the first capacitive ground plate 111 includes a first extension 1111, and the first extension 1111 is in contact with the inner metal pillar 64 of the second TSV structure 6 in the first row; The second capacitive ground plate 112 includes a second extension 1121, and the second extension 1121 is in contact with the inner metal column 64 of the penultimate TSV structure 6 in the second column. Two TSV capacitors formed by the first TSV structure 6 and the last TSV structure 6 in the second column are connected in total to the filter.
[0066] See Figure 12 , Figure 12It is a perspective view of another configurable three-d...
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