A Configurable Three-dimensional Microwave Filter Based on Coaxial Through-Silicon Vias

A technology of microwave filters and through-silicon vias, which is applied in semiconductor devices, electric solid-state devices, semiconductor/solid-state device components, etc., can solve problems such as low integration density and limited function expansion, and achieve low process cost and mutual The effect of short connection and high utilization efficiency

Active Publication Date: 2020-07-17
XIDIAN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the size of existing microwave filters is on the order of centimeters, and the integration density is not high; and the existing passive integrated filter modules need to use micro-mechanical switches or external variable capacitors, and the function expansion is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Configurable Three-dimensional Microwave Filter Based on Coaxial Through-Silicon Vias
  • A Configurable Three-dimensional Microwave Filter Based on Coaxial Through-Silicon Vias
  • A Configurable Three-dimensional Microwave Filter Based on Coaxial Through-Silicon Vias

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] See figure 1 and figure 2 , figure 1 It is a three-dimensional perspective view of a configurable three-dimensional filter based on coaxial silicon vias provided by an embodiment of the present invention, figure 2 yes figure 1 A cross-sectional view of the configurable 3D filter along line A-A in . The configurable three-dimensional microwave filter includes a ground layer 1 , a first interconnection layer 2 , a TSV capacitance layer 3 and a second interconnection layer 4 from top to bottom. The TSV capacitive layer 3 includes a substrate 31 and a plurality of TSV structures 6 penetrating the substrate 31 .

[0047]The first interconnection layer 2 is provided with a plurality of first connectors 21 arranged in parallel and penetrating the upper and lower surfaces of the first interconnection layer 2 , and the plurality of first connectors 21 realize the top ends between the corresponding TSV structures 6 Interconnection; the second interconnection layer 4 is pro...

Embodiment 2

[0065] On the basis of the above embodiments, this embodiment provides other structures and connection methods of the ground terminal 11, please refer to Figure 11 , Figure 11 It is a perspective view of another configurable three-dimensional filter based on coaxial silicon vias provided by an embodiment of the present invention. In this embodiment, the first capacitive ground plate 111 includes a first extension 1111, and the first extension 1111 is in contact with the inner metal pillar 64 of the second TSV structure 6 in the first row; The second capacitive ground plate 112 includes a second extension 1121, and the second extension 1121 is in contact with the inner metal column 64 of the penultimate TSV structure 6 in the second column. Two TSV capacitors formed by the first TSV structure 6 and the last TSV structure 6 in the second column are connected in total to the filter.

[0066] See Figure 12 , Figure 12It is a perspective view of another configurable three-d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a configurable three-dimensional microwave filter based on coaxial silicon through holes. The configurable three-dimensional microwave filter comprises a ground layer, a firstinterconnect layer, a silicon through hole capacitor layer and a second interconnect layer in order from top to bottom, wherein a plurality of first connecting members are disposed on the first interconnect layer; a plurality of second connecting members are disposed on the second interconnect layer; the ground layer includes a ground lead-out terminal which is selectively grounded; the silicon through hole capacitor layer includes a substrate and a plurality of silicon through hole structures penetrating through the substrate; the plurality of silicon through hole structures are successivelyconnected end to end through the plurality of first connecting members and the plurality of second connecting members to form a three-dimensional spiral inductor. The configurable three-dimensional microwave filter is compact in structure, high in utilization efficiency, low in chip area, and integrated, avoids introduction of additional loss, is short in interconnect line, low in parasitic parameter and low in off-chip coupling.

Description

technical field [0001] The invention belongs to the technical field of passive electronic devices, and in particular relates to a configurable three-dimensional microwave filter based on coaxial through-silicon holes. Background technique [0002] The microwave system can realize the clipping, filtering and attenuation / amplification processing of microwave signals, and is widely used in military detection and communication fields such as various smart weapons, electronic warfare, phased array radar, millimeter wave imaging, and mobile communication. As the key frequency selection unit in the microwave system, the microwave filter is a device used to separate microwave signals of different frequencies. Its main function is to suppress unnecessary signals so that they cannot pass through, and only allow the required signals to pass through the microwave filter. , which has many development needs: miniaturization, reducing the size of the microwave filter as much as possible, c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/66
Inventor 尹湘坤朱樟明杨银堂李跃进丁瑞雪
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products