A kind of preparation method of perc flexible graphene/silicon solar cell
A silicon solar cell and flexible graphite technology, applied in the field of solar energy, can solve the problems of low energy conversion efficiency, achieve the effects of reducing the use of silicon, improving the separation of photogenerated electron-hole pairs, and increasing spectral absorption
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Embodiment 1
[0056] Embodiment 1: a kind of preparation method of PERC flexible graphene / silicon solar cell, concrete steps are as follows:
[0057] (1) Using the metal nanoparticle assisted chemical etching method to introduce a silicon nanostructure array with a subwavelength structure on the surface of the silicon wafer to obtain a flexible nano-textured silicon wafer; the silicon wafer is 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 10 minutes in sequence, and then the silicon wafers were placed in a KOH solution with a mass fraction of 45% and soaked and thinned for 4 hours at a soaking temperature of 60°C. Leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, seal the rest of the front surface except the window, and then place the silicon wafer in 1% HF acid solution for 60 minutes to remove the window surface and silicon The oxide layer on the back of the chip; the structure of...
Embodiment 2
[0074]Embodiment 2: a kind of preparation method of PERC flexible graphene / silicon solar cell, concrete steps are as follows:
[0075] (1) Using the metal nanoparticle assisted chemical etching method to introduce a silicon nanostructure array with a subwavelength structure on the surface of the silicon wafer to obtain a flexible nano-textured silicon wafer; the silicon wafer is 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 15 minutes in sequence, and then the silicon wafers were placed in a KOH solution with a mass fraction of 20% and soaked and thinned for 3 hours at a soaking temperature of 40°C. Leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, seal the rest of the front surface except the window, and then soak the silicon wafer in 40% HF acid solution for 1 min to remove the window surface and silicon The oxide layer on the back of the chip; the structure of the s...
Embodiment 3
[0088] Embodiment 3: a kind of preparation method of PERC flexible graphene / silicon solar cell, concrete steps are as follows:
[0089] (1) Using metal nanoparticle-assisted chemical etching method to introduce a silicon nanostructure array with sub-wavelength structure on the surface of a silicon wafer (20 microns in thickness) to obtain a flexible nano-textured silicon wafer; the silicon wafer is 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 12 minutes, and then the silicon wafers were placed in a KOH solution with a mass fraction of 90% and soaked and thinned for 0.2 hours at a soaking temperature of 50°C. , leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, seal the rest of the front surface except the window, and then place the silicon wafer in 5% HF acid solution for 10 minutes to remove the window surface and The oxide layer on the back of the silicon wafer; the ...
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