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A kind of preparation method of perc flexible graphene/silicon solar cell

A silicon solar cell and flexible graphite technology, applied in the field of solar energy, can solve the problems of low energy conversion efficiency, achieve the effects of reducing the use of silicon, improving the separation of photogenerated electron-hole pairs, and increasing spectral absorption

Active Publication Date: 2021-07-16
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, Schottky junction photovoltaic devices based on graphene / silicon nanostructures have been reported, but compared with other photovoltaic devices based on silicon nanostructures, the energy conversion efficiency of this type of photovoltaic devices is still low
However, how to improve its optical and electrical properties through reasonable structural design, so as to achieve stable, reliable and high efficiency of flexible graphene / silicon devices is the main challenge at present.

Method used

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  • A kind of preparation method of perc flexible graphene/silicon solar cell
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  • A kind of preparation method of perc flexible graphene/silicon solar cell

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Effect test

Embodiment 1

[0056] Embodiment 1: a kind of preparation method of PERC flexible graphene / silicon solar cell, concrete steps are as follows:

[0057] (1) Using the metal nanoparticle assisted chemical etching method to introduce a silicon nanostructure array with a subwavelength structure on the surface of the silicon wafer to obtain a flexible nano-textured silicon wafer; the silicon wafer is 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 10 minutes in sequence, and then the silicon wafers were placed in a KOH solution with a mass fraction of 45% and soaked and thinned for 4 hours at a soaking temperature of 60°C. Leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, seal the rest of the front surface except the window, and then place the silicon wafer in 1% HF acid solution for 60 minutes to remove the window surface and silicon The oxide layer on the back of the chip; the structure of...

Embodiment 2

[0074]Embodiment 2: a kind of preparation method of PERC flexible graphene / silicon solar cell, concrete steps are as follows:

[0075] (1) Using the metal nanoparticle assisted chemical etching method to introduce a silicon nanostructure array with a subwavelength structure on the surface of the silicon wafer to obtain a flexible nano-textured silicon wafer; the silicon wafer is 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 15 minutes in sequence, and then the silicon wafers were placed in a KOH solution with a mass fraction of 20% and soaked and thinned for 3 hours at a soaking temperature of 40°C. Leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, seal the rest of the front surface except the window, and then soak the silicon wafer in 40% HF acid solution for 1 min to remove the window surface and silicon The oxide layer on the back of the chip; the structure of the s...

Embodiment 3

[0088] Embodiment 3: a kind of preparation method of PERC flexible graphene / silicon solar cell, concrete steps are as follows:

[0089] (1) Using metal nanoparticle-assisted chemical etching method to introduce a silicon nanostructure array with sub-wavelength structure on the surface of a silicon wafer (20 microns in thickness) to obtain a flexible nano-textured silicon wafer; the silicon wafer is 1.5×1.5cm 2 The monocrystalline silicon wafers were ultrasonically cleaned with ethanol and deionized water for 12 minutes, and then the silicon wafers were placed in a KOH solution with a mass fraction of 90% and soaked and thinned for 0.2 hours at a soaking temperature of 50°C. , leave the middle part of the upper surface of the thinned flexible silicon wafer as a window, seal the rest of the front surface except the window, and then place the silicon wafer in 5% HF acid solution for 10 minutes to remove the window surface and The oxide layer on the back of the silicon wafer; the ...

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Abstract

The invention discloses a preparation method of PERC flexible graphene / silicon solar cells, belonging to the field of solar cells. The present invention obtains silicon wafers with nanostructure and ultra-thin flexible characteristics through the one-step preparation technology of flexible nano-textured silicon wafers, adopts chemical passivation or / and field passivation to passivate the surface of silicon wafers, and then uses The method of drop coating, spin coating, wet transfer or magnetron sputtering realizes the modification of the surface of the silicon wafer by quantum dots or two-dimensional materials, and then introduces the conductive layer and the transfer layer of graphene, and finally connects the electrodes to complete the flexible Fabrication of graphene / silicon solar cells. The metal nanoparticle-assisted chemical etching method of the present invention realizes the controllable preparation of large-scale nanostructures on the surface of the silicon base, so as to increase the spectral absorption of the silicon base and also achieve the thinning of the silicon base to obtain flexible silicon; the PERC flexible graphene / silicon solar cell structure of the present invention It is an ultra-thin flexible battery with a thickness of 1-100 μm.

Description

technical field [0001] The invention relates to a preparation method of PERC flexible graphene / silicon solar cells, belonging to the technical field of solar energy. Background technique [0002] In recent years, vigorously developing renewable energy has become the consensus of all countries in the world. Among the many renewable energy sources, solar energy has attracted the attention of countries all over the world because of its advantages such as infinite reserves, green, clean and pollution-free, and wide application areas. The utilization of solar energy mainly includes photochemical conversion, photothermal conversion and photoelectric conversion. Among them, photoelectric conversion refers to the use of semiconductor photovoltaic effect to convert solar energy into electrical energy by using photoelectric conversion devices, that is, photovoltaic power generation. There is a bright future in energy use. With the advantages of abundant reserves, suitable energy ban...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0236H01L31/0352H01L31/18
CPCY02E10/50Y02P70/50
Inventor 李绍元马文会邱佳佳于洁秦博魏奎先杨春曦谢克强雷云吕国强伍继君杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH