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A bidirectional electrostatic discharge protection device

A technology of electrostatic discharge protection and devices, which is applied in the direction of circuit electrostatic discharge protection, overvoltage protection, electric solid state devices, etc., can solve the problems of unfavorable circuit integration, large conduction resistance, and difficult control, and achieve layout area saving, Low trigger voltage and good protection effect

Active Publication Date: 2020-11-10
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In terms of circuits, it is mainly to increase the ESD tolerance of the integrated circuit itself, such as adding additional ESD protection devices or circuits to protect the internal circuits of the integrated circuit from being damaged by ESD, which increases the device area and is not conducive to circuit integration. improvement
In addition, the current electrostatic discharge protection devices have the problem that it is not easy to control, and it is prone to latch-up effect (latchup), which may easily lead to circuit instability
There are also problems such as the introduction of large on-resistance and the unsatisfactory effect of protecting the internal circuit.

Method used

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  • A bidirectional electrostatic discharge protection device
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Embodiment Construction

[0024] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0025] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0026] It will be understood that when an element or layer is referred t...

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Abstract

The present invention provides a bidirectional electrostatic discharge protection device, which includes a first type doped region, a first second type doped region, a second second type doped region, and a first diode and the second diode, wherein the first type doped region is a ring structure formed outside the first second type doped region and the second second type doped region, the first The cathode of a diode is connected to the first type doped region, the anode of the first diode and the first second type doped region are commonly connected to the first port, and the second diode The cathode is connected to the first type doped region, and the anode of the second diode is connected to the second port together with the second second type doped region. The bidirectional electrostatic discharge protection device provided by the invention can save layout area, has low trigger voltage, good protection effect, flexible structure, and can realize protection under different voltages.

Description

technical field [0001] The invention relates to semiconductor design and manufacturing technology, in particular to a bidirectional electrostatic discharge protection device. Background technique [0002] As the level of integrated circuit manufacturing technology enters the deep submicron era of integrated circuit line width, the feature size of CMOS technology continues to shrink, and the ability of transistors to withstand high voltage and high current continues to decrease. Deep submicron CMOS integrated circuits are more susceptible to electrostatic shock failure, resulting in a decrease in product reliability. [0003] Electrostatic Discharge (ESD) is a common phenomenon that occurs during the manufacturing, production, assembly, testing, and transportation of integrated circuit devices or chips. The large current generated in a short time during electrostatic discharge can cause fatal damage to integrated circuits, which is an important problem causing failure in the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0259H01L27/0255H01L27/0207H01L27/0248H05K1/0259
Inventor 汪广羊
Owner CSMC TECH FAB2 CO LTD