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QLED device

A device and light-emitting layer technology, applied in the field of QLED devices, can solve the problems of low photoluminescence efficiency, accumulation of T1 state excitons, quenching, etc.

Inactive Publication Date: 2019-07-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TADF materials are required to have a small singlet-triplet energy level difference (ΔEST), and a small ΔEST in molecular design generally has a small radiation coefficient k f This leads to low photofluorescence efficiency, and in the case of high current density, it will also cause the accumulation of T1 state excitons, resulting in unfavorable triplet-triplet and singlet-triplet quenching, affecting the device's ability to triplet excitons. conversion

Method used

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preparation example Construction

[0031] Based on the above-mentioned composite quantum dot light-emitting diode device, in combination with specific embodiments of the present invention, a method for preparing a QLED device is also provided, which includes the steps of:

[0032] S10 depositing at least one hole transport layer 102 on the surface of the anode substrate 101;

[0033] S20 depositing a light-emitting layer 103 composed of quantum dots and HLCT materials on the surface of the hole transport layer 102;

[0034] S30 depositing at least one electron transport layer 104 on the surface of the light emitting layer 103;

[0035] S40 depositing a cathode layer 105 on the surface of the electron transport layer 104 to obtain the QLED device.

[0036] Specifically, when prepared as figure 1 In the case of the composite quantum dot light-emitting diode device, the step B specifically includes: first mixing the quantum dot material and the HLCT material uniformly in a certain proportion according to the mas...

Embodiment 1

[0041] The structure of the QLED device in this embodiment is: an anode layer 101 , a hole functional layer 102 , a light emitting layer 103 , an electronic functional layer 104 and a cathode layer 105 are sequentially stacked on a glass substrate.

[0042] The material of the anode layer 101 is ITO, and the hole functional layer 102 is a composite layer formed by stacking PEDOT:PSS and TFB; the material of the light-emitting layer 103 is a light-emitting layer composed of TPA-PA and CdSeZnS core-shell quantum dots; the electronic function layer 104 is ZnS and A composite layer formed by stacking ZnO; the material of the cathode layer 105 is Al.

[0043] The preparation method of the QLED device in this embodiment is as follows:

[0044] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0045] b. Spin-coat a TFB layer on the PEDOT:PSS layer;

[0046] c. First mix CdSeZnS core-shell quantum dots and TPA-PA in a weight ratio of 5:...

Embodiment 2

[0050] The structure of the QLED device in this embodiment is: an anode layer 101 , a hole functional layer 102 , a light emitting layer 103 , an electronic functional layer 104 and a cathode layer 105 are sequentially stacked on a glass substrate.

[0051] The material of the anode layer 101 is ITO, and the hole functional layer 102 is a composite layer formed by stacking PEDOT:PSS and TFB; the material of the light-emitting layer 103 is a light-emitting layer composed of TPA-PA and CdSeZnS core-shell quantum dots; the electronic function layer 104 is ZnS and A composite layer formed by stacking ZnO; the material of the cathode layer 105 is Al.

[0052] The preparation method of the QLED device in this embodiment is as follows:

[0053] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0054] b. Spin-coat a TFB layer on the PEDOT:PSS layer;

[0055] c. First mix CdSe@ZnS quantum dots and TPA-PA in a weight ratio of 2:98, dissol...

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Abstract

The present invention discloses a QLED (Quantum dot light-emitting diode) device. QLED device comprises a light emitting layer which is a composite light emitting layer composed of quantum dots and HLCT (hydridized local and charge trasfer) materials. The HLCT materials can convert a triplet state excitor to a singlet state excitor, the energy is transmitted to the quantum dots through fluorescence resonance to enhance the light emitting of the quantum dots, and in a high drive current, the utilization for the triplet state excitor by a device can be still maintained so as to further improve the current efficiency of the QLED device and ensure the efficiency stability of the device.

Description

technical field [0001] The invention relates to the technical field of QLED devices, in particular to a QLED device. Background technique [0002] Colloidal quantum dots have considerable application prospects in the field of display devices because of their high fluorescence efficiency, good monochromaticity, adjustable emission wavelength and good stability. Quantum dot-based light-emitting diodes (Quantum dotlight-emitting diodes, QLEDs) have the advantages of better color saturation, energy-efficient color temperature, and long life, and are expected to become the mainstream technology for next-generation solid-state lighting and flat panel displays. [0003] There are relatively few reports on white light quantum dot light-emitting diode devices. One of the main structures is to use three-primary-color quantum dots to emit light, that is, red, green, and blue quantum dots are used as the three-primary-color mixed light to emit white light, and the blue quantum dots need...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/115H10K50/11H10K2101/10
Inventor 张珈铭曹蔚然
Owner TCL CORPORATION