Preparation method of BiVO4/2D g-C3N4Z type heterojunction photocatalyst

A 2dg-c3n4, 2dg-c3n4z technology, which is applied in the field of preparation of BiVO4/2Dg-C3N4Z heterojunction photocatalysts, can solve the problem that the synergy is difficult to exert effectively, the photogenerated electron-hole pair recombination rate is high, and the photogenerated current carrying The problem of large electron transport distance, etc., to achieve the effect of rapid separation and electron migration ability, promote efficient charge separation, and promote efficient separation.

Active Publication Date: 2019-07-09
秦皇岛天大环保研究院有限公司 +1
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Problems solved by technology

[0004] The preparation method of the prior art has the disadvantages of large transport distance of photogenerated carriers from the bulk phase to the surface and high recombination rate of photoge

Method used

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  • Preparation method of BiVO4/2D g-C3N4Z type heterojunction photocatalyst
  • Preparation method of BiVO4/2D g-C3N4Z type heterojunction photocatalyst
  • Preparation method of BiVO4/2D g-C3N4Z type heterojunction photocatalyst

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preparation example Construction

[0031] The invention provides a BiVO 4 / 2D g-C 3 N 4 The preparation method of Z-type heterojunction photocatalyst, first prepare BiVO by hydrothermal reaction method 4 , thermally polymerized melamine to prepare graphitic carbon nitride (g-C 3 N 4 ), 2D g-C was obtained by thermal oxidation exfoliation 3 N 4 , and then BiVO was prepared by ultrasonic-assisted chemical adsorption method using methanol as solvent 4 / 2D g-C 3 N 4 Z type heterojunction photocatalyst, its specific steps are:

[0032] S1. Preparation of BiVO by hydrothermal reaction method 4 :

[0033] With Bi(NO 3 ) 3 ·5H 2 O is a raw material dissolved in HNO with a concentration of 2mol / L 3 solution, fully stirred to form A solution; with NH 4 VO 3 The raw material is dissolved in a NaOH solution with a concentration of 2mol / L, fully stirred to form a B solution; Bi(NO 3 ) 3 ·5H 2 O and NH 4 VO 3 The molar ratio is 1:1; slowly pour solution B into solution A, and keep stirring to form a yell...

Embodiment 1

[0041] S1. Preparation of BiVO by hydrothermal reaction method 4 :

[0042] Weigh 0.58g bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O) the concentration that dissolves in 10mL is the HNO of 2mol / L 3 solution, A solution was formed after fully stirring for 30 minutes. Weigh 0.14g ammonium metavanadate (NH 4 VO 3 ) was dissolved in 10 mL of NaOH solution with a concentration of 2 mol / L, and stirred thoroughly for 30 min to form B solution. Slowly pour B solution into A solution, and keep stirring to form a yellow mixture suspension, use NaOH solution to adjust the pH value to 7, and then fully stir for 30min, the prepared BiVO 4 Pour the precursor solution into a hydrothermal kettle, tighten and seal the hydrothermal kettle, put it in an oven at 180°C for 12 hours, wait for the reaction kettle to cool down to room temperature, wash the sample with water and ethanol, remove the yellow precipitate in the lower layer, and dry at 80°C for 6 hours to obtain Yellow BiVO 4 sample;

[...

Embodiment 2

[0055] S1. Preparation of BiVO by hydrothermal reaction method 4 :

[0056] Weigh 0.58g bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O) the concentration that dissolves in 10mL is the HNO of 2mol / L 3 solution, A solution was formed after fully stirring for 30 minutes. Weigh 0.14g ammonium metavanadate (NH 4 VO 3 ) was dissolved in 10 mL of NaOH solution with a concentration of 2 mol / L, and stirred thoroughly for 30 min to form B solution. Slowly pour B solution into A solution, and keep stirring to form a yellow mixture suspension, use NaOH solution to adjust the pH value to 7, and then fully stir for 30min, the prepared BiVO 4 Pour the precursor solution into a hydrothermal kettle, tighten and seal the hydrothermal kettle, put it in an oven at 180°C for 12 hours, wait for the reaction kettle to cool down to room temperature, wash the sample with water and ethanol, remove the yellow precipitate in the lower layer, and dry at 80°C for 6 hours to obtain Yellow BiVO 4 sample;

[...

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Abstract

The invention discloses a preparation method of a BiVO4/2D g-C3N4Z type heterojunction photocatalyst. The method specially comprises the following steps: firstly preparing BiVO4 by a hydrothermal reaction method, performing thermal polymerization on melamine to prepare graphite-phase carbon nitride (g-C3N4), performing thermal oxidation stripping to obtain 2D g-C3N4, and preparing the BiVO4/2D g-C3N4Z heterojunction photocatalyst by using methanol as a solvent and adopting ultrasonic assisted chemisorption. According to the method provided by the invention, in the BiVO4/2D g-C3N4Z heterojunction photocatalyst prepared by the method, the 2D g-C3N4 is distributed on the surface of the BiVO4 to form a Z-type heterojunction structure, the catalyst can rapidly separate photo-generated electronsand holes, improve service life of photoelectrons and reduce a recombination rate of the photo-generated electrons and the holes, and has good response to visible light, and after a catalytic reaction is performed for 40 min, a degradation rate of a Rhodamine B solution can reach 93.0%; and the material can be used for photodegradation of organic pollutants, and has important significance for environmental management.

Description

technical field [0001] The invention belongs to the technical field of photocatalysts and relates to a BiVO 4 / 2D g-C 3 N 4 A method for preparing a Z-type heterojunction photocatalyst. Background technique [0002] The photocatalytic technology based on semiconductor oxides has become a relatively effective technology for the treatment of environmental pollutants due to its excellent characteristics such as no pollution, simple completion process, direct use of solar energy as a reactive light source, and production of clean energy. BiVO 4 As a new type of semiconductor material, its band gap is narrow (about 2.40eV), it has excellent visible light response, and the position of conduction band and valence band (compared with standard hydrogen electrode) is suitable. an efficient semiconductor photocatalyst. However, BiVO 4 Photocatalysts have the characteristics of poor charge transport ability, fast recombination, and poor adsorption, which limit their photocatalytic...

Claims

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Application Information

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IPC IPC(8): B01J27/24
CPCB01J27/24B01J35/004
Inventor 杨静凯许敏梁波王立坤赵洪力
Owner 秦皇岛天大环保研究院有限公司
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