Polishing solution, preparation method thereof and processing method of silicon carbide crystal

Abstract

The invention relates to the technical field of precision machining and in particular relates to a polishing solution, a preparation method thereof and a processing method of a silicon carbide crystal. The polishing solution comprises the following components in parts by weight: 5-30 parts of polycrystalline diamond micropowder, 1000 parts of silica sol, 2-40 parts of a suspending agent,4-21 partsof a wetting agent, 2-14 parts of a defoaming agent and 2-10 parts of a pH regulator. The preparation method comprises the steps: mixing the polycrystalline diamond micropowder, the suspending agent,the wetting agent, the defoaming agent and the pH regulator, adding the mixture into water, then, adding silica sol, and carrying out uniform stirring. The polishing solution can be used for processing the silicon carbide crystal. If the polishing solution disclosed by the invention is matched with a polishing pad to polish silicon carbide, the precision polishing time can be effectively shortened, the whole grinding and polishing time can be shortened, and the surface quality of the crystal can be remarkably improved.

Description

Technical field

[0001] The invention relates to the technical field of precision processing, in particular to a polishing liquid and a preparation method thereof and a processing method of silicon carbide crystals. Background technique

[0002] Silicon carbide (SiC), as the third-generation wide-bandgap semiconductor material, is also the most mature third-generation semiconductor material currently developed. It has excellent thermal, mechanical, chemical and electrical properties. It is not only one of the best materials for making high-temperature, high-frequency, high-power electronic devices, but also can be used as a substrate material for blue light emitting diodes based on gallium nitride. It can be widely used in the field of power electronics, microwave devices and LED optoelectronics.

[0003] In terms of material properties, silicon carbide is very superior. Its band gap is 3 times that of silicon, its saturated electron drift rate is twice higher than that of silicon,...

Examples

Embodiment 1

[0076] The preparation method of the polishing liquid of this embodiment includes the following steps:

[0077] (1) Take 50g D50=0.125μm polycrystalline diamond powder, 100g inorganic bentonite, 35g BYK-345, 50gAFE-3168, 10g borax, add 5kg of pure water, and ultrasonically stir for 0.5h;

[0078] (2) Add 5 kg of silica sol with a solid content of 40% and a particle size of 70 nm to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.

Embodiment 2

[0080] The preparation method of the polishing liquid of this embodiment includes the following steps:

[0081] (1) Take 25g D50=0.5μm polycrystalline diamond micropowder, 45g Silok 7370W, 60g BYK-W 9010, 20g BYK-024, 10g BYK-094 and 50g methyl monoethanolamine, add 5kg of pure water, ultrasonically stir for 0.5h ;

[0082] (2) Add 5 kg of silica sol with a particle size of 80 nm with a solid content of 45% to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.

Embodiment 3

[0084] The preparation method of the polishing liquid of this embodiment includes the following steps:

[0085] (1) Take 100g of polycrystalline diamond powder with D50=0.25μm, 30g BYK-431, 30g TRITON CF-10, 45g FOAMEX 825, and 20g potassium hydroxide, add 5kg of pure water, and ultrasonically stir for 0.5h;

[0086] (2) Add 5 kg of silica sol with a solid content of 50% and a particle size of 60 nm to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.

Technical field

[0001] The invention relates to the technical field of precision processing, in particular to a polishing liquid and a preparation method thereof and a processing method of silicon carbide crystals. Background technique

[0002] Silicon carbide (SiC), as the third-generation wide-bandgap semiconductor material, is also the most mature third-generation semiconductor material currently developed. It has excellent thermal, mechanical, chemical and electrical properties. It is not only one of the best materials for making high-temperature, high-frequency, high-power electronic devices, but also can be used as a substrate material for blue light emitting diodes based on gallium nitride. It can be widely used in the field of power electronics, microwave devices and LED optoelectronics.

[0003] In terms of material properties, silicon carbide is very superior. Its band gap is 3 times that of silicon, its saturated electron drift rate is twice higher than that of silicon,...

Examples

Embodiment 1

[0076] The preparation method of the polishing liquid of this embodiment includes the following steps:

[0077] (1) Take 50g D50=0.125μm polycrystalline diamond powder, 100g inorganic bentonite, 35g BYK-345, 50gAFE-3168, 10g borax, add 5kg of pure water, and ultrasonically stir for 0.5h;

[0078] (2) Add 5 kg of silica sol with a solid content of 40% and a particle size of 70 nm to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.

Embodiment 2

[0080] The preparation method of the polishing liquid of this embodiment includes the following steps:

[0081] (1) Take 25g D50=0.5μm polycrystalline diamond micropowder, 45g Silok 7370W, 60g BYK-W 9010, 20g BYK-024, 10g BYK-094 and 50g methyl monoethanolamine, add 5kg of pure water, ultrasonically stir for 0.5h ;

[0082] (2) Add 5 kg of silica sol with a particle size of 80 nm with a solid content of 45% to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.

Embodiment 3

[0084] The preparation method of the polishing liquid of this embodiment includes the following steps:

[0085] (1) Take 100g of polycrystalline diamond powder with D50=0.25μm, 30g BYK-431, 30g TRITON CF-10, 45g FOAMEX 825, and 20g potassium hydroxide, add 5kg of pure water, and ultrasonically stir for 0.5h;

[0086] (2) Add 5 kg of silica sol with a solid content of 50% and a particle size of 60 nm to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.

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