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A quantum dot film, a preparation method thereof and a QLED device

A technology of quantum dots and quantum dot solution, applied in the field of quantum dots, to achieve the effects of easy repetition, improved fluorescence intensity and simple operation

Inactive Publication Date: 2019-07-09
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the research on the effect of ligands on quantum dot solid-state films mainly focuses on the chemical properties of the ligands on the surface of quantum dots (such as the functional groups of the ligands, the surface binding properties of the ligands, the length of the ligand molecules, etc.). The study of the effect of the dot surface on the physical state of the ligand molecule (ie, the macroscopic state of the ligand: solid or liquid) on the electrical properties of the quantum dot solid film has not been reported

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  • A quantum dot film, a preparation method thereof and a QLED device
  • A quantum dot film, a preparation method thereof and a QLED device

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preparation example Construction

[0021] Correspondingly, a kind of preparation method of quantum dot thin film comprises the following steps:

[0022] S01: providing a first quantum dot solution, the first quantum dot solution contains quantum dots with initial ligands bound to their surfaces;

[0023] S02: providing an anion precursor, adding the anion precursor to the first quantum dot solution, and performing passivation treatment to obtain a second quantum dot solution;

[0024] S03: providing a thiol ligand, adding the thiol ligand to the second quantum dot solution, performing surface ligand exchange, and obtaining a third quantum dot solution;

[0025] S04: Depositing the third quantum dot solution on a substrate to obtain the quantum dot film.

[0026] The preparation method of the quantum dot thin film provided by the embodiment of the present invention firstly adds an appropriate amount of anion precursor to the quantum dot mixed solution to passivate the passivated quantum dot, so that the surface...

Embodiment 1

[0038] The preparation method of PbS quantum dots, comprises the steps:

[0039] 1) Lead oleate {Pb(OA) 2} Preparation of precursors:

[0040] Take 0.6mmol of lead acetate trihydrate, 2ml of oleic acid (OA), and 10mL of octadecene (ODE) into a three-necked flask, first ventilate at room temperature for 20min, then raise the temperature to 150°C and stir for 30min, then lower the temperature to 120°C.

[0041] 2) Preparation of sulfur (S) precursor:

[0042] Add 4mmol of S to 6ml of trioctylphosphine (TOP), heat to 170°C for 30min, then cool down to 140°C.

[0043] 3) After raising the temperature of the mixture in 1) to 150°C, take 2mL of sulfur precursor and quickly inject it into the flask to react for 10 minutes, quickly take out the heating mantle and wait for the temperature of the mixture to cool down to room temperature, then add the extractant and precipitate The solvent is centrifuged and cleaned to obtain oil-soluble PbS near-infrared quantum dots and dried, and t...

Embodiment 2

[0045] The preparation method of S-TOP passivation PbS quantum dots, comprises the steps:

[0046] 1) get the PbS quantum dot solution (quantum dot weight is 100mg) in the above-mentioned embodiment 1 and be dispersed in the 18 dilute solution of 10mL, carry out normal temperature exhaust 20min first under inert gas, then the PbS quantum dot solution temperature is raised to 150°C.

[0047] 2) Disperse 0.5 mmol of sulfur (S) powder in 1 mL of trioctyl phosphine (TOP) and dissolve at 170°C to obtain an anion precursor S-TOP solution, then cool to room temperature for use.

[0048] 3) Add the S-TOP solution in 2) to the quantum dot solution in 1) for passivation for 30 minutes, and then reduce the temperature of the mixed solution to 100° C. to maintain a constant temperature.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a quantum dot film, a preparation method thereof and a QLED device. The quantum dot film contains quantum dots, a thiol ligand is combined to the surfaces of the quantum dots, and anions are also combined to the surfaces of the quantum dots. According to the invention, the surfaces of quantum dots in the quantum dot film are combined with the anions; therefore, the binding rate of the thiol ligand and the metal elements on the surfaces of the quantum dots can be effectively reduced, the surface defects caused by the fact that the thiol ligand on the surfaces of the quantum dots flows to drive metal atoms on the surfaces of the quantum dots to flow are effectively reduced, the fluorescence intensity ofthe quantum dot film is improved, and the luminous efficiency of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a quantum dot thin film, a preparation method thereof and a QLED device. Background technique [0002] The large specific surface area of ​​quantum dots indicates that the electrical and optical properties of quantum dots are dominated by surface electronic states, especially those with a band gap; therefore, understanding and controlling the electronic states on the surface of quantum dots and utilizing these electrical properties Doing some practical application is an important research topic. [0003] The electrical properties of colloidal semiconductor quantum dots are more important, which mainly depend on the ligands on the surface of colloidal quantum dots. Colloidal quantum dots synthesized by different methods have different types of ligands on the surface. Passivation of surface charge and surface charge is critical. When using colloidal quantum dots ...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/66H01L51/50
CPCC09K11/661C09K11/025H10K50/115
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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