A method of applying gallium-based thermal interface materials to aluminum substrates to enhance interfacial heat transfer

A thermal interface material, aluminum substrate technology, applied in chemical instruments and methods, surface reaction electrolytic coatings, electrolytic coatings, etc., to achieve the effect of reducing contact thermal resistance

Active Publication Date: 2021-05-18
DALIAN MARITIME UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While ensuring the high thermal conductivity of the aluminum substrate, this method can not only isolate the chemical reaction between the gallium-based liquid metal and the aluminum substrate, but also effectively solve the conductivity problem introduced by the liquid metal.

Method used

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  • A method of applying gallium-based thermal interface materials to aluminum substrates to enhance interfacial heat transfer
  • A method of applying gallium-based thermal interface materials to aluminum substrates to enhance interfacial heat transfer
  • A method of applying gallium-based thermal interface materials to aluminum substrates to enhance interfacial heat transfer

Examples

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Effect test

Embodiment 1

[0035] A method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interfacial heat transfer, comprising the steps of:

[0036] (1). Aluminum sheet pretreatment: Use a CNC milling machine to cut the pure aluminum sheet to the required size (a disc with a diameter of 11.4mm-13.8mm), immerse it in acetone solution with a mass fraction of 97vol%, and use ultrasonic The cleaning instrument was fully shaken for 10 minutes to remove the oil on the surface of the aluminum sheet. Then use absolute ethanol to clean according to the above steps, and finally use deionized water to clean according to the above steps to ensure that the surface of the aluminum sheet is clean and pollution-free.

[0037] (2). Preparation of aluminum oxide film: use an anodic oxidation reaction device to oxidize the surface of the aluminum base, and the reaction device is as follows figure 1shown. The device is used for polishing and chromic acid anodizing treatment ...

Embodiment 2

[0050] A method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interfacial heat transfer, comprising the steps of:

[0051] (1). Aluminum sheet pretreatment: Use a CNC milling machine to cut the pure aluminum sheet to the required size (a disc with a diameter of 11.4mm-13.8mm), immerse it in an acetone solution with a mass fraction of 85vol%, and use ultrasonic The cleaning instrument was fully shaken for 15 minutes to remove the oil on the surface of the aluminum sheet. Then use absolute ethanol to clean according to the above steps, and finally use deionized water to clean according to the above steps to ensure that the surface of the aluminum sheet is clean and pollution-free.

[0052] (2). Preparation of aluminum oxide film: use an anodic oxidation reaction device to oxidize the surface of the aluminum base, and the reaction device is as follows figure 1 shown. The device is used for polishing and chromic acid anodizing treatm...

Embodiment 3

[0060] A method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interfacial heat transfer, comprising the steps of:

[0061] (1). Aluminum sheet pretreatment: Use a CNC milling machine to cut the pure aluminum sheet to the required size (a disc with a diameter of 11.4mm-13.8mm), immerse it in acetone solution with a mass fraction of 90vol%, and use ultrasonic The cleaning instrument was fully shaken for 10 minutes to remove the oil on the surface of the aluminum sheet. Then use absolute ethanol to clean according to the above steps, and finally use deionized water to clean according to the above steps to ensure that the surface of the aluminum sheet is clean and pollution-free.

[0062] (2). Preparation of aluminum oxide film: use an anodic oxidation reaction device to oxidize the surface of the aluminum base, and the reaction device is as follows figure 1 shown. The device is used for polishing and chromic acid anodizing treatment...

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Abstract

The invention discloses a method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interfacial heat transfer. 10‑25 minutes; (2) Preparation of aluminum oxide film: Alkali washing, polishing, deoxidation, and chromic acid anodic oxidation of pretreated aluminum sheet to prepare aluminum oxide film; (3) Preparation of three-layer structure sample: Gallium-based The liquid metal is coated on the aluminum oxide film surface of the aluminum sheet, stacked together in the order of aluminum substrate, aluminum oxide film, gallium-based liquid metal, aluminum oxide film, and aluminum substrate, and prepared under a pressure of 4-11MPa. The invention realizes the application of gallium-based liquid metal thermal interface materials on the surface of aluminum substrates for the first time to enhance heat transfer between interfaces, fills the gap in this field, and solves the electrical conduction problem existing when liquid metal thermal interface materials are applied to metal-solid interfaces .

Description

technical field [0001] The invention relates to the field, in particular to a method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interface heat transfer. Background technique [0002] With the rapid development of integrated circuits and electronic packaging technology, the volume of electronic devices and logic circuits has shrunk rapidly, and the computing speed has increased sharply, and the heat flux density of electronic components has also increased sharply. The heat dissipation of electronic devices is one of the important factors affecting the reliability of equipment, and also determines the overall performance of electronic systems. In order to ensure the normal operation of electronic devices and prolong their service life, it is particularly important to optimize the heat dissipation process in electronic devices. In electronic components, the thermal resistance between the chip and the heat sink is one of the main...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B37/00C25D11/16C25D11/08
CPCB32B37/00B32B2307/302C25D11/08C25D11/16
Inventor 纪玉龙闫慧龙肖秀马鸿斌
Owner DALIAN MARITIME UNIVERSITY
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