Monocrystalline silicon solar cell texturing additive and application thereof

A solar cell and monocrystalline silicon technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of processes such as diffusion, screen printing influence, pyramid enlargement, unevenness, etc., to avoid white spots, The effect of increasing the production capacity and making the suede surface small

Inactive Publication Date: 2019-07-23
SHANGHAI HANYAO NEW MATERIAL TECH
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to better remove the damaged layer and line marks formed during the silicon wafer cutting process, the existing texturing equipment generally has an initial polishing process, and after the initial polishing, the pyramids formed on the surface of the silicon wafer after conventional texturing will become larger and very large. Uneven, and further affect subsequent processes such as diffusion, screen printing, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monocrystalline silicon solar cell texturing additive and application thereof
  • Monocrystalline silicon solar cell texturing additive and application thereof
  • Monocrystalline silicon solar cell texturing additive and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6

[0043] Embodiment 1-6: the application of a monocrystalline silicon solar cell texturing additive, comprising the following steps:

[0044] Add the monocrystalline silicon solar cell texturing additive into the monocrystalline texturing tank with the pre-prepared texturing liquid, and control the temperature at 82°C. >The P-type B-doped monocrystalline silicon wafer on the crystal surface is immersed in the single crystal texturing tank for reaction, and the texturing time is controlled at 400s;

[0045] Wherein the texturing liquid includes 1.6% sodium hydroxide, the mass ratio of the monocrystalline silicon solar cell texturing additive to the texturing liquid is 0.01:1, each component of the monocrystalline silicon solar cell texturing additive and its corresponding mass The percentages are shown in Table 1.

[0046] Each component and parts by weight thereof in table 1 embodiment 1-6

[0047]

Embodiment 7

[0048] Embodiment 7: The application of a monocrystalline silicon solar cell texturing additive, the difference from Example 1 is that the monocrystalline silicon solar cell texturing additive includes the following components in mass percentage:

[0049] Sodium hydroxide: 0.05%;

[0050] Methyl glucose polyoxyethylene ether: 0.5%;

[0051] Glucose: 0.3%;

[0052] Polyacrylamide: 0.01%;

[0053] Lactic acid: 0.1%;

[0054] Potassium dodecylsulfonate: 0.1%;

[0055] Silicone surfactant: 0.1%;

[0056] Sodium silicate: 0.01%;

[0057] Deionized water: 98.74%.

Embodiment 8

[0058] Embodiment 8: The application of a monocrystalline silicon solar cell texturing additive, the difference from Example 1 is that the monocrystalline silicon solar cell texturing additive includes the following components in mass percentage:

[0059] Sodium hydroxide: 0.05%;

[0060] Methyl glucose polyoxyethylene ether: 0.5%;

[0061] Glucose: 0.3%;

[0062] Polyacrylamide: 0.01%;

[0063] Lactic acid: 0.1%;

[0064] Potassium dodecylsulfonate: 0.1%;

[0065] Silicone surfactant: 0.1%;

[0066] Sodium silicate: 2%;

[0067] Deionized water: 96.84%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a monocrystalline silicon solar cell texturing additive and an application thereof, and relates to the technical field of silicon chip texturing. The technical point of the monocrystalline silicon solar cell texturing additive is that the monocrystalline silicon solar cell texturing additive comprises the following components, by mass percent: 0.05-0.2% of alkalis, 0.5-2% of methyl glucose polyoxyethylene ether, 0.3-0.5% of glucose, 0.01-0.05% of polyacrylamide, 0.1-5% of lactic acid, and 0.2-2% of a surfactant, with the balance being deionized water. The monocrystalline silicon solar cell texturing additive has the advantages of rapid texture surface making, small and uniform texture surfaces and low reflectivity.

Description

technical field [0001] The invention relates to the technical field of silicon wafer texturing, more specifically, it relates to a monocrystalline silicon solar cell texturing additive and its application. Background technique [0002] At present, the preparation process of monocrystalline silicon solar cells mainly includes eight processes: (1) pre-cleaning; (2) texturing; (3) diffusion; (4) etching; (5) PE; (6) back passivation; (7) Screen printing; (8) Battery test sorting. Solar cells based on monocrystalline silicon crystals are prepared through the above process, and then crystalline silicon is made into components through component packaging technology for photovoltaic power generation. [0003] The main function of texturing in the above process is to form undulating surfaces similar to the shape of "pyramids" on the surface of monocrystalline silicon. Through these "pyramids" structures, the reflectivity of the surface of the silicon wafer is reduced, and the light...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 叶俊王肖杰
Owner SHANGHAI HANYAO NEW MATERIAL TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products