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A perovskite battery based on room temperature film formation to prepare tin oxide electron transport layer and its preparation method

An electron transport layer, perovskite cell technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as unfavorable flexibility, increase the complexity of the preparation process, and damage the flexible film substrate.

Active Publication Date: 2021-01-26
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high-temperature annealing process will increase the complexity of the preparation process and increase the preparation cost; at the same time, it will damage the flexible film substrate, which is not conducive to the development of its flexibility.

Method used

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  • A perovskite battery based on room temperature film formation to prepare tin oxide electron transport layer and its preparation method
  • A perovskite battery based on room temperature film formation to prepare tin oxide electron transport layer and its preparation method
  • A perovskite battery based on room temperature film formation to prepare tin oxide electron transport layer and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Example 1 Preparation of a perovskite battery based on room temperature film formation to prepare a tin oxide electron transport layer

[0056] (1) Add 2 drops of 2 mol / L ammonia water dropwise to 0.5 mol / L tin tetrachloride aqueous solution, keep warm at 60°C, and age for 2-3 hours, wash and dry the resulting wet gel to obtain tin oxide nanoparticles crystal;

[0057] SnO nanocrystals are dispersed in 25mol% ammonia water, and the pH value is 10 to obtain a precursor solution of 3wt% electron transport layer;

[0058] (2) 461mg of lead diiodide and 159mg of methyl ammonium iodide were dissolved in 630ul of dimethylformamide and 70ul of dimethyl sulfoxide to obtain a perovskite precursor solution;

[0059] (3) 72.3mg spiro-OMeTAD was dissolved in 1080ul chlorobenzene solvent to obtain the hole transport layer precursor solution;

[0060] (4) spin coating the precursor solution of the tin oxide electron transport layer that step (1) makes on the ITO glass surface, spin...

Embodiment 2

[0083] After the precursor solution of the electron transport layer of this comparative example is formed into a film at room temperature, no heat treatment is required, and the electron transport layer is treated with ultraviolet ozone. The intensity of ultraviolet ozone is 35kw, and the treatment time is 15min to obtain the electron transport layer;

[0084] Other steps are the same as those in Example 1.

Embodiment 3

[0086] After the precursor solution of the electron transport layer of this comparative example is formed into a film at room temperature, no heat treatment is required, and the electron transport layer is treated with ultraviolet ozone. The intensity of ultraviolet ozone is 25kw, and the treatment time is 13min to obtain the electron transport layer;

[0087] Other steps are the same as those in Example 1.

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Abstract

The present invention disclosed a combination and preparation method based on room temperature -based film to prepare tin oxide electronic transmission layers.Layers and electrodes; the electronic transmission layer is coated with tin nano -microcrystalline coating prepared by the film temperature.The present invention prepares the electronic transmission layer of tin oxide at room temperature, which can simplify the preparation process of battery devices, reduce costs, and improve the preparation efficiency of perovskite solar cells.Development in and practical.The method provided by the present invention is simple and effective. The room temperature film formation to prepare tin oxide electronic transmission layers has the electronic performance of the level of electronic transmission layer of tin tin oxide at high temperature, which can make the highest efficiency of perovskite batteries reach 19.79 %, and has application potential.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, and in particular relates to a perovskite cell based on preparing a tin oxide electron transport layer at room temperature and a preparation method thereof. Background technique [0002] The world's population explosion and rapid industrial development have caused serious energy shortages and environmental pollution. Therefore, it is urgent to find new clean and pollution-free renewable energy sources. Solar energy has the characteristics of inexhaustible, inexhaustible, clean and pollution-free, and has great potential for development. In recent years, photovoltaic cell technology has developed rapidly, especially the development of perovskite solar cells. In the past ten years, the efficiency of perovskite solar cell devices has rapidly increased from 3.8% to more than 24%, comparable to traditional silicon cells and CIGS thin-film cells, and has very broad application prospects...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/15Y02E10/549
Inventor 胡劲松马婧媛李明华丁捷
Owner INST OF CHEM CHINESE ACAD OF SCI