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Processing method of through cavity structure silicon wafer

A processing method and technology for silicon wafers, applied in the field of silicon wafer processing, can solve the problems that grinding cannot be completed as required, cannot transfer silicon wafers, and affect sealing, etc., and achieve excellent comprehensive technical effects, huge economic and social value, and products. The effect of quality assurance

Active Publication Date: 2019-08-02
SHENYANG SILICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The difference is that ordinary MEMS cavities are buried in the silicon wafer in the final structure, and the penetrating cavities need to be exposed to the outside. Most of the current silicon wafer processing equipment uses vacuum to grab and process silicon wafers, and the cavities penetrating the entire silicon wafer will be Breaking the vacuum will directly affect the completion of the equipment. For example, conventional processing needs to use a grinding and polishing machine for two grindings to completely expose the parts that were not leaked in the graphic sheet to form a through structure, but the interference of the graphics will be lost during the second grinding. Affects the vacuum seal. After the cavity is opened, the vacuum is completely destroyed. The grinding and polishing machine cannot fix the silicon wafer or transfer the silicon wafer, resulting in the grinding process not being completed as required or even endangering the machine.

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  • Processing method of through cavity structure silicon wafer

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Effect test

Embodiment 1

[0029] A method for processing a silicon wafer with a through-cavity structure, which sequentially operates according to the following requirements:

[0030] ① Ion implantation is performed on the silicon wafer or graphic chip; the treatment of step ① is to pre-treat the fake bottom by peeling off the microwave split technology at the end;

[0031] ② Implant the false bottom, and use the silicon chip to bond with the graphic chip; the bonded silicon chip is the false bottom, which will seal the graphics in the next step and ensure that the machine can be processed; step ② is directly bonded by the silicon chip Combined technology to achieve the purpose of introducing false bottom;

[0032] ②Grinding and polishing by mechanical grinding or / and chemical polishing, using the bonded silicon wafer as the substrate, thinning the graphic chip, grinding to the depth of the exposed graphic, and exposing the cavity that was not exposed originally; grinding Polishing uses mechanical gri...

Embodiment 2

[0044]A method for processing a silicon wafer with a through-cavity structure, which sequentially operates according to the following requirements:

[0045] ① Carry out chemical wet cleaning on the graphic sheet to remove contamination, reduce metal and organic pollution, and then perform oxidation treatment, and uniformly grow 0.1-0.5μm on the front and back, edges, and cavities of the graphic sheet at 800-1150°C thick oxide layer.

[0046] ②Hydrogen ion implantation with energy of 10-120Kev, dose of 1E15-9E16, and beam current of 1-20mA is carried out on the graphic sheet.

[0047] ③Use an ordinary silicon wafer and graphic wafer for 0-90s plasma enhancement, and bond the ordinary silicon wafer with the surface with graphics, and the ordinary silicon wafer is the false bottom.

[0048] ④Grind the bonding sheet of step ③, and grind the graphic sheet, use the false bottom as the substrate, thin the graphic sheet, and grind to the depth of the exposed pattern.

[0049] ⑤ Perf...

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Abstract

The invention discloses a processing method of a through cavity structure silicon wafer. The processing method is characterized by sequentially comprising the following steps of: carrying out ion implantation on the silicon wafer or a graphic wafer; implanting a false bottom, and using a silicon wafer to bond with the graphic wafer; performing grinding and polishing, thinning the graphic wafer tothe depth of exposing the graphic wafer; performing bonding; stripping the false bottom. Compared with the prior art, the method has the advantages that the operation is standard, and the product quality can be effectively guaranteed; the product is high in cost performance and excellent in comprehensive technical effect; and the method has predictable huge economic value and social value.

Description

[0001] Technical field: [0002] The invention relates to the technical field of silicon chip processing, and in particular provides a processing method for a silicon chip with a through-cavity structure. [0003] Background technique: [0004] With the vigorous development of MEMS technology, more and more new MEMS structures are required. However, due to the constraints of processing hardware equipment, many structures are facing the dilemma that they cannot be manufactured. In the case that the hardware cannot meet the requirements, engineers and technicians are required to develop new technologies to overcome this embarrassing contradiction. [0005] The MEMS that runs through the cavity is one of the special structures. The difference is that ordinary MEMS cavities are buried in the silicon wafer in the final structure, and the penetrating cavities need to be exposed to the outside. Most of the current silicon wafer processing equipment uses vacuum to grab and process sil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81C3/00
CPCB81C1/00214B81C3/001B81B2203/0315B32B2038/0016B32B38/0008B32B2457/14B08B3/08B32B37/06B32B43/006B32B2310/14B32B2313/00B81B1/004B81B2203/0353B81C1/00047B81C1/00087B81C1/00357B81C1/00507B81C1/00849B81C2201/0116B81C2201/0125B81C2201/0178B81C2201/019B81C2201/0192B81C2201/0194
Inventor 李响
Owner SHENYANG SILICON TECH