Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A controllable method for preparing graphene quantum dots

A technology of graphene quantum dots and ions, which is applied in the direction of graphene, chemical instruments and methods, nano-carbon, etc., can solve the problems of difficult purification and uncontrollable doping solubility, and achieve controllable arrangement, less waste, and easy preparation The effect of simple process

Active Publication Date: 2021-01-01
烯泽新材料科技(江阴)有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the modification method that is easy to realize in the process and is more commonly used is heteroatom doping, but its doping solubility is uncontrollable and difficult to purify.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A controllable method for preparing graphene quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] see figure 1 , what this embodiment provides is a kind of controllable method for preparing graphene quantum dots, comprising the following steps:

[0031] Step ①: preparing a substrate 1, and forming a photoresist 2 on the substrate 1;

[0032] The substrate 1 is a nickel substrate, a semiconductor substrate or a crystal substrate. In this embodiment, a nickel substrate is used to catalyze the growth of graphene quantum dots in the later stage;

[0033] Step ②: Forming the photoresist 2 into the implantation window 3 by photolithography or ion exposure;

[0034] The position, size, quantity and distribution of the injection windows 3 can be adjusted by photolithography or ion exposure. For example, the shape of the injection windows 3 in this embodiment is circular, and all the injection windows 3 are arranged in a rectangular array. The injection window 3 has a diameter of 1 angstrom to 100 nanometers, preferably 10 nm;

[0035] Step ③: Implanting the carbon source...

Embodiment 2

[0043] The difference between this embodiment and Embodiment 1 is that in step ③, a dopant source, such as an N dopant source, is also injected at the same time as the carbon source is injected, and the corresponding step ⑤ is extrinsically doped graphene quantum dots . At the same time, there is a year-on-year change between the implantation dose of the N doping source and the carbon source dose in the obtained doped graphene quantum dots, that is, the ratio between the doping element and the carbon source in the doped graphene quantum dots and the implantation process in step ③ The dopant element dose and the carbon source dose ratio are the same, which fully demonstrates that the energy of ion implantation of the dopant element in this embodiment can also ignore the type of substrate and fully enter the interior of the substrate. Leaving the interior of the substrate, it mixes with a carbon source to form doped graphene.

[0044] At the same time, through additional EDS ch...

Embodiment 3

[0046]The difference between this embodiment and embodiment 2 is that in step ③, the carbon source is implanted with N doping source and P doping source at the same time, and the ratio between N, P and C in the obtained doped graphene quantum dots is It is the same as the ratio between N, P and C implantation doses in step ③. Through EDS characterization, it can also show that N, P and C are evenly distributed, which fully shows that the number of doping elements will not affect the doping uniformity. The amount and type of doping in the method of this embodiment have been greatly expanded.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a controllable method for preparing graphene quantum dots, and the controllable method comprises the following steps: preparing a substrate and forming a photoresist on the substrate; forming an injection window on the photoresist by using a photoetching method or an ion exposure method; injecting a carbon source into the injection window by an ion implantation method; removing the photoresist; annealing the substrate to grow the graphene quantum dots on the surface of the substrate. According to the invention, the size of the injection window is adjusted on the basis of controlling the dose and energy of the injection source and controlling the number of layers of the modified quantum dots, so that the synthesized particle size of the quantum dots is changed; meanwhile, the doping concentration is adjusted through the dose of the doping source, and the shape and position of the injection window are adjusted through photoetching, so that the arrangement mode ofthe quantum dots synthesized in the later stage is controllable, the preparation process is simple, less waste is generated, and the method is relatively environment-friendly. Without doping, intrinsic graphene quantum dots can be prepared, and if doping source ions are changed, and graphene quantum dots with different doping can be prepared.

Description

【Technical field】 [0001] The invention relates to a controllable method for preparing graphene quantum dots, belonging to the field of graphene quantum dots. 【Background technique】 [0002] Graphene quantum dots (GQDs) are quasi-zero-dimensional materials that exhibit unique properties such as photoluminescence and slow hot-carrier relaxation due to quantum confinement effects and edge effects. Not only that, but the shape and size of GQDs also determine their electrical, magnetic, and chemical properties. At present, the synthesis of GQDs mainly includes top-down exfoliation shearing and bottom-up synthesis. The top-down method refers to "shearing" carbon materials such as graphene, carbon nanotubes, and fullerenes by physical or chemical means to obtain GQDs, but this preparation method cannot effectively control the surface morphology and Particle size; the bottom-up method is to chemically synthesize precursors with a certain number of conjugated carbon atom structures...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184C09K11/65B82Y20/00
CPCB82Y20/00C09K11/65C01B32/184
Inventor 王婷王刚陈达李久荣顾冰丽高博王梓豪
Owner 烯泽新材料科技(江阴)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com