Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Leveler and electroplating solution containing same

A leveling agent and compound technology, applied in the field of electroplating, can solve problems such as poor metal plating effect, affecting the stability of electronic equipment, and broken copper

Active Publication Date: 2021-04-27
GUANGDONG TONESET SCI & TECH
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are also a variety of commercial copper electroplating solutions on the market. When these solutions are used in the co-plating process of through-blind holes, some of them can fill blind holes well, but the copper layer at the corner of the through-hole hole will be too thin. In severe cases, even the phenomenon of "broken copper" will seriously affect the electrical and signal interconnection performance of the circuit board, and then affect the stability of electronic equipment
Some potions do not have the problem of too thin copper layer at the corner of the through hole, but their metal plating effect on the inner wall of the through hole and the blind hole is poor, and it cannot meet the high-density interconnection circuit board industry. Require

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Leveler and electroplating solution containing same
  • Leveler and electroplating solution containing same
  • Leveler and electroplating solution containing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] The preparation of embodiment 1 leveling agent (the reactant molar ratio is 0.7:0.3:1)

[0081] In a 100mL three-necked flask equipped with a condenser and a thermometer, add 4.06g (28.13mmol) of 2-phenylimidazole, 2.08g (12.06mmol) of N,N,N',N'-tetramethyl-1,6 - Hexamethylenediamine, 30mL deionized water, 8.13g (40.20mmol) 1,4-butanediol diglycidyl ether, adjust the pH value of the reaction system to 5 with 50% dilute sulfuric acid, and heat it in an oil bath at 50°C The mixture was stirred at low temperature for 1 hour, then raised to 90° C. and stirred for 10 hours, then stopped, cooled to room temperature, and adjusted to pH 2 of the reaction system with 50% dilute sulfuric acid to obtain an amber solution.

[0082] The NMR spectrum of the reaction product solution (heavy water as solvent, 300MHz) has the following peaks: δppm: 7.76-7.40 (m, 7H), 4.30-3.30 (m, 21.7H), 3.14-3.03 (m, 5.14H), 1.70 -1.20(m,9.12H), confirmed the structure.

Embodiment 2

[0083] The preparation of embodiment 2 leveling agent (the reactant molar ratio is 0.5:1:1)

[0084] In a 100mL three-necked flask equipped with a condenser and a thermometer, add 4.00g (27.74mmol) 4-phenylimidazole, 5.61g (55.48mmol) triethylamine, 34mL deionized water, 11.22g (55.48mmol) 1, 4-Butanediol diglycidyl ether, adjust the pH of the reaction system to 6 with 50% dilute sulfuric acid, heat in an oil bath, stir and react at 50°C for 2 hours, then rise to 90°C and stir for 15 hours, stop the reaction , cooled to room temperature, and adjusted the pH of the reaction system to 2 with 50% dilute sulfuric acid to obtain an amber solution.

[0085] The H NMR spectrum of the reaction product solution (heavy water as solvent, 300MHz) has the following peaks: δppm: 8.70-8.60 (m, 1H), 7.65-7.40 (m, 6H), 4.30-3.05 (m, 40H), 1.60-1.14 (m,26H), the structure was confirmed.

Embodiment 3～8

[0086] Embodiment 3~8 leveling agent preparation

[0087] The preparation method is the same as that in Example 1, except that the types and molar ratios of the reagents of imidazole compounds, tertiary amine compounds and epoxy compounds are shown in Table 1 for details.

[0088] Table 1

[0089]

[0090]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a leveling agent and an electroplating solution containing the same, wherein the leveling agent includes functional components, and the functional components are reaction products formed by reacting imidazole compounds, tertiary amine compounds and epoxy compounds. The leveling agent can be better applied to the co-plating process of through-blind holes, and can effectively avoid the problem that the plating layer inside the through-hole and the corner of the through-hole opening is too thin.

Description

technical field [0001] The invention relates to the technical field of electroplating, in particular to a leveler and an electroplating solution containing it. Background technique [0002] With the development of electronic equipment in the direction of high intelligence, miniaturization, and portability, the circuit boards equipped with it are also developing in the direction of high-density interconnection. At present, the High Density Interconnect Board (HDI) circuit board realizes the interconnection between layers through through holes, blind holes and buried holes. Therefore, hole metallization technology is the key to restricting the development of HDI circuit boards. Technical factors, the pros and cons of this technology directly determine the performance of the circuit board. At present, the hole metallization of HDI boards generally goes through two processes, that is, electroplating for filling blind holes first, and then electroplating through through holes. H...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/38C07D233/61C07D233/60C07D405/12C07D405/06
CPCC07D233/60C07D233/61C07D405/06C07D405/12C25D3/38
Inventor 邹浩斌高健席道林万会勇肖定军
Owner GUANGDONG TONESET SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com