A kind of porous tantalum-based oxynitride ceramics and its preparation method

A technology of nitride ceramics and oxynitride, which is applied to ceramic products, other household appliances, household appliances, etc., can solve the problems of low heat transfer efficiency, low purity of nitrogen oxide ceramics, and long sintering time to achieve radiation heat transfer High efficiency, high heating and heat transfer efficiency, and high porosity

Active Publication Date: 2022-03-11
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional sintering method takes a long time to sinter, the heat transfer efficiency is low during sintering, and the purity of the prepared nitrogen oxide ceramics is low

Method used

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  • A kind of porous tantalum-based oxynitride ceramics and its preparation method
  • A kind of porous tantalum-based oxynitride ceramics and its preparation method
  • A kind of porous tantalum-based oxynitride ceramics and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] like figure 1 As shown, a preparation method of the porous tantalum-based oxynitride ceramics of this embodiment comprises the following steps:

[0036] (1) Take 1g of BaTaO with a purity of 98% 2 The N powder was ground evenly and dried at 110°C for 12 hours to obtain BaTaO 2 N dry powder.

[0037] (2) BaTaO obtained in step (1) 2 N dry powder was placed in a stainless steel mold and held at a pressure of 100MPa for 60s to obtain BaTaO 2 N round flake green body.

[0038] (3) BaTaO obtained in step (2) 2 The N disc-shaped body is placed vertically and centered in the reaction vessel 1 (a closed graphite crucible in this embodiment) and arranged at intervals. The pressureless discharge plasma sintering is carried out in a nitrogen atmosphere, and the temperature is raised to 1250°C, keep it warm for 1min, and then cool to room temperature with the furnace to get BaTaO 2 N ceramic sheet.

[0039] like figure 2 As shown, in this example, BaTaO 2 The N circular...

Embodiment 2

[0054] A preparation method of the porous tantalum-based oxynitride ceramics of this embodiment, comprising the following steps:

[0055] (1) Take 1g of BaTaO with a purity of 98% 2 The N powder was ground evenly and dried at 110°C for 12 hours to obtain BaTaO 2 N dry powder.

[0056] (2) Put the powder obtained in step (1) into a stainless steel mold, and hold the pressure at 100MPa for 60s to obtain BaTaO 2 N round flake green body.

[0057] (3) BaTaO obtained in step (2) 2 The N disc-shaped body is placed vertically and centered in the reaction vessel 1 (a closed graphite crucible in this embodiment) and arranged at intervals. The pressureless discharge plasma sintering is carried out in a nitrogen atmosphere, and the temperature is raised to 1300°C, keep it warm for 1min, and then cool to room temperature with the furnace to get BaTaO 2 N ceramic sheet.

[0058] In this example, BaTaO 2 The placement method of the N-disc blank is the same as that of Example 1.

[0...

Embodiment 3

[0062] A preparation method of the porous tantalum-based oxynitride ceramics of this embodiment, comprising the following steps:

[0063] (1) Take 1g of BaTaO with a purity of 98% 2 The N powder was ground evenly and dried at 110°C for 12 hours to obtain BaTaO 2 N dry powder.

[0064] (2) Put the powder obtained in step (1) into a stainless steel mold, and hold the pressure at 100MPa for 60s to obtain BaTaO 2 N round flake green body.

[0065] (3) BaTaO obtained in step (2) 2 N disc-shaped blanks are vertically placed in the center of the reaction vessel 1 (this embodiment is a closed graphite crucible) and arranged at intervals, and the pressureless discharge plasma sintering is carried out in a nitrogen atmosphere, and the temperature is raised at a heating rate of 100°C / min. 1300°C, keep it warm for 1min, and then cool to room temperature with the furnace to get BaTaO 2 N ceramic sheet.

[0066] In this example, BaTaO 2 The placement method of the N-disc blank is the...

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Abstract

The invention discloses a preparation method of porous tantalum-based oxynitride ceramics, which comprises the following steps: S1, uniformly grinding tantalum-based oxynitride powder and then drying to obtain dry oxynitride powder; S2, placing the oxynitride dry powder in Carry out compression molding in a mold to obtain a sheet-shaped green body; S3, place the sheet-shaped green body vertically in a reaction vessel and set the sheet-shaped green body and the reaction container at intervals, and perform pressureless discharge plasma sintering under a protective atmosphere to obtain oxygen Nitride ceramic sheet; S4, decarbonizing the oxynitride ceramic sheet to obtain a porous tantalum-based oxynitride ceramic. The invention has the advantages of short sintering time, high heat transfer efficiency and high product purity.

Description

technical field [0001] The invention relates to the technical field of preparation of porous functional ceramic materials, in particular to a porous tantalum-based oxynitride ceramic and a preparation method thereof. Background technique [0002] In recent years, AB (O, N) 3 Type oxynitride ceramics have received extensive attention due to their new optical, electrical, magnetic, and photocatalytic properties. This type of oxynitride has a lower theoretical band gap value (1.5-2.5eV) than oxides, and can catalyze the splitting of water in the visible light range (wavelength 400-800nm); at the same time, it has both metal oxides and nitrides. It has the advantages of good chemical stability and thermal stability. It is very stable in water and strong acid and strong alkali. It starts to decompose when it is above 600°C in the air and above 800°C in an inert atmosphere. As a typical representative, tantalum-based oxynitride BaTaO 2 N is a cubic crystal system, its theoreti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/58C04B35/64C04B38/00
CPCC04B35/58007C04B35/64C04B38/0038C04B2235/6562C04B2235/6567C04B2235/666C04B2235/96C04B2235/77C04B2235/785C04B2235/782C04B38/0074
Inventor 李端李斌曾良
Owner NAT UNIV OF DEFENSE TECH
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