Simulation method of graphene doped structure
A simulation and graphene technology, applied in the field of simulation, can solve the problems of insufficient adsorption of reducing gas, unfavorable graphene detection, unreachable, etc., to improve electronic characteristics, reduce errors, and increase the degree of charge transfer. Effect
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Embodiment 1
[0036] In this embodiment, simulation software is used to simulate and calculate the structure and energy band, density of state, and charge density of the intrinsic graphene after doping.
[0037] A graphene cell with a lattice constant of 0.246nm is selected and expanded into a 3×3×1 graphene supercell. There are 18 carbon atoms in the supercell, and the thickness of the vacuum layer in the C direction is taken as To avoid interlayer interference of graphene.
[0038] Three doping sites on pristine graphene, located on the C-C bridge, directly above the C, and holes in the lattice, were studied. Doped graphene was optimized using an automated optimization method. The calculation results show that the energy of doping graphene is minimal when the dopant atoms are located above C, so the dopant atoms are introduced by substituting C atoms.
[0039] The exchange correlation between electrons can be corrected by the PBE function under the generalized gradient approximation me...
Embodiment 2
[0044] In this embodiment, the structure and energy band, density of state, and charge density of intrinsic graphene after doping Pt atoms are simulated and calculated. Simulations were carried out for doping one, two, and three Pt atoms, and they were recorded as Pt 1 -Gra, Pt2 -Gra, Pt 3 -Gra. get Pt 1 -Gra, Pt 2 -Gra, Pt 3 -Gra structure, energy band, density of state, charge density distribution diagram.
[0045] The simulation steps and method of this embodiment are the same as those of Embodiment 1.
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