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Aluminum tantalum rotary target and preparation method thereof

A technology of rotating target and purity, applied in metal material coating process, ion implantation coating, pressure inorganic powder coating and other directions, can solve the problems of target arc discharge, increase coating cost, high price, etc., and achieve target composition. The effect of uniform, dense coating structure and avoiding segregation

Inactive Publication Date: 2019-08-30
苏州康科斯柔性电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing technology uses vacuum melting hollow target tubes and then splicing and binding methods to prepare large-size rotating targets. The splicing and binding of targets requires a large amount of indium, which is expensive and greatly increases the cost of targets.
On the other hand, there is a gap between the bonded target nodes and the nodes, and the existence of the gap can easily cause target arc discharge, reduce the film quality, affect the sputtering rate and work efficiency, and increase the coating cost
[0003] At the same time, there are many problems in the existing alloy targets. With the continuous upgrading of flat-panel displays and large-scale integrated circuits, the requirements for target quality are getting higher and higher. It is urgent to find a new process to prepare high-end targets that meet the requirements. Aluminum tantalum rotating target

Method used

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  • Aluminum tantalum rotary target and preparation method thereof
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  • Aluminum tantalum rotary target and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0031] (1) Use ultrasonic cleaning to treat the stainless steel substrate for 30 minutes, then dry the cleaned substrate, and finally perform sandblasting on the substrate. The sandblasting uses steel grit with a particle size of 18 mesh.

[0032] (2) In an argon protective atmosphere, use the plasma spraying method to spray nickel-aluminum powder to prepare a nickel-aluminum alloy transition layer with a thickness of 0.15 mm. The specific parameters are shown in Table 1.1.

[0033] Table 1.1 Controlled atmosphere plasma spraying nickel aluminum powder parameters

[0034]

[0035] (3) The purity of the aluminum-tantalum powder is not less than 99.99%. The powder is ball milled for 5 hours, and sieved to obtain a powder with a particle size of 150-1000 mesh.

[0036] (4) The controllable atmosphere cold spraying chamber is evacuated first and then filled with circulating protective gas argon. The flow rate of argon gas is 1200SCCH, the substrate rotates around the central ax...

Embodiment 2

[0040] (1) Use ultrasonic cleaning to treat the stainless steel substrate for 30 minutes, then dry the cleaned substrate, and finally perform sandblasting on the substrate. The sandblasting uses steel grit with a particle size of 18 mesh.

[0041] (2) In an argon protective atmosphere, use the plasma spraying method to spray nickel-aluminum powder to prepare a nickel-aluminum alloy transition layer with a thickness of 0.2mm. The specific parameters are shown in Table 2.1.

[0042] Table 2.1 Controlled atmosphere plasma spraying nickel aluminum powder parameters

[0043]

[0044] (3) The aluminum tantalum powder is not less than 99.99%, and the powder is ball milled for 5 hours, and sieved to obtain a powder with a particle size of 150-1000 mesh.

[0045] (4) Vacuum the spraying chamber first and then pass in the circulating protection gas argon. The argon flow rate is 1200SCCH, the substrate rotates around the central axis at a speed of 100r / min, and the moving speed of th...

Embodiment 3

[0049] (1) Use ultrasonic cleaning to treat the stainless steel substrate for 30 minutes, then dry the cleaned substrate, and finally perform sandblasting on the substrate. The sandblasting uses steel grit with a particle size of 18 mesh.

[0050] (2) In an argon protective atmosphere, use the plasma spraying method to spray nickel-aluminum powder to prepare a nickel-aluminum alloy transition layer with a thickness of 0.2mm. The specific parameters are shown in Table 3.1.

[0051] Table 3.1 Controlled atmosphere plasma spraying nickel aluminum powder parameters

[0052]

[0053] (3) The aluminum tantalum powder is not less than 99.99%, and the powder is ball milled for 5 hours, and sieved to obtain a powder with a particle size of 150-1000 mesh.

[0054] (4) Vacuum the spraying chamber first and then pass in the circulating protection gas argon. The argon flow rate is 1200SCCH, the substrate rotates around the central axis at a speed of 100r / min, and the moving speed of th...

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Abstract

The invention discloses an aluminum tantalum rotary target and a preparation method thereof, specifically, the raw material of the aluminum tantalum rotary target is aluminum tantalum powder, and thetarget is prepared by spraying the aluminum tantalum powder by using a controllable atmosphere cold spraying technology. The preparation method comprises the steps of preparing the aluminum tantalum powder with the particle size of 150-1000 meshes and the purity of not less than 99.99%; carrying out the treatments of rust removal, cleaning, sand blasting and the like on a stainless steel substrate; spraying an alloy transition layer by using a plasma spraying method under the protection of inert gas; and preparing the rotary target by cold spraying the aluminum tantalum powder onto the substrate containing the alloy transition layer in a circulating inert gas protective atmosphere, specifically, the inert gas flow rate is 200-1500 SCCH, the substrate rotates around a central shaft at the speed of 60-150 rounds per minute, and the moving speed of a spray gun is 500-1500 millimeters per minute. The aluminum tantalum rotary target prepared by the method is high in purity (more than or equal to 99.99%, oxygen content is less than or equal to 200 ppm), high in density (relative density is more than or equal to 97%), uniform in composition, and capable of reaching 4000 millimeters in length and 3-15 millimeters in thickness.

Description

technical field [0001] The invention relates to an aluminum tantalum rotating target and a preparation method thereof. Background technique [0002] Rotating targets are mainly used in flat panel displays, large-scale integrated circuits and other fields, which have extremely high requirements for the purity and density of the targets. The prior art uses vacuum melting of hollow target tubes, followed by splicing and binding to prepare large-size rotating targets. The splicing and binding of targets requires a large amount of indium, which is expensive and greatly increases the cost of targets. On the other hand, there is a gap between the bound target nodes and the nodes, and the existence of the gap can easily cause target arc discharge, reduce the film quality, affect the sputtering rate and work efficiency, and increase the coating cost. [0003] At the same time, there are many problems in the existing alloy targets. With the continuous upgrading of flat-panel displays...

Claims

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Application Information

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IPC IPC(8): C22C21/00C23C24/04C23C4/134C23C4/08C23C28/02C23C14/34
CPCC22C21/00C23C4/08C23C4/134C23C14/3414C23C24/04C23C28/021
Inventor 徐从康
Owner 苏州康科斯柔性电子有限公司