Method of producing semiconductor epitaxial wafer

Abstract

Provided is a method for manufacturing a semiconductor epitaxial wafer, which can have a higher gettering capability even if the conditions for cluster ion implantation are the same. A method for manufacturing a semiconductor epitaxial wafer according to the present invention includes: a first step of implanting multi-element cluster ions containing 3 elements of carbon, hydrogen, and oxygen as constituent elements into a surface of a semiconductor wafer to form a modified layer in which the constituent elements of the multi-element cluster ions are dissolved in a surface layer portion of thesemiconductor wafer; a second step of performing a defect formation heat treatment for increasing a defect density of the black-dot defects formed in the modified layer after the first step; and a third step of forming an epitaxial layer on the modified layer of the semiconductor wafer after the second step.

Description

technical field

[0001] The invention relates to a method for manufacturing a semiconductor epitaxial wafer. In particular, the present invention relates to a method of manufacturing a semiconductor epitaxial wafer exhibiting a higher gettering capability. Background technique

[0002] Metal contamination can be cited as a factor that degrades the characteristics of semiconductor devices. For example, in a back-illuminated solid-state imaging element, metal mixed into a semiconductor epitaxial wafer serving as the element substrate becomes a main cause of an increase in the dark current of the solid-state imaging element, and a defect called a white spot defect (white defect) occurs. defect. The back-illuminated solid-state imaging device is used in recent years because the wiring layer and the like are arranged on the lower layer of the sensor part, and the light from the outside is directly taken into the sensor, and even in a dark place, etc., it is possible to capture a...

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