Preparation of surface hydroxylated Wo by plasma treatment 3 Thin-film photoelectrode materials approach
A plasma and hydroxylation technology, applied in the field of materials, can solve the problems of increasing the risk of the experimental process, being unfavorable for mass production, increasing the cost of preparation, etc., achieving a wide range of applications, excellent photoelectric catalytic water splitting performance, and increased conductivity Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0022] Preparation of Surface Hydroxylated WO by Plasma Treatment 3 The method for thin film photoelectrode material, concrete steps are as follows: take 1.25g of H 2 WO 4 and 0.5g polyvinyl alcohol (PVA) dissolved in 17ml of H 2 o 2 (30wt%), pipette 200uL above-mentioned solution and spin-coat on FTO, spin coater parameter is set to low speed 500 rev / s, time 10 seconds, high speed 1500 revs / sec, time 30 seconds; After the FTO thin film is dried at room temperature, Calcined at 500°C in air for 2h, the heating rate was 180°C / h, to obtain WO 3 / FTO seed; 1.25g H 2 WO 4 Dissolve in 30mL H 2 O, add 17 mL of 30 wt% H 2 o 2 , heated at 95°C for 2h to obtain a clear solution, and put the volume in a 100ml volumetric flask to obtain 0.05mol / L of H 2 WO 4 solution; add 3mL H in 10mL acetonitrile 2 WO 4 (0.05mol / L) solution, 0.2g oxalic acid, 0.5mL hydrochloric acid solution with a concentration of 6mol / l and 2.5ml deionized water, stir for 15min to make the solution fully ...
Embodiment 2
[0024] Preparation of Surface Hydroxylated WO by Plasma Treatment 3 The method for thin film photoelectrode material, concrete steps are as follows: take 1.5g of H 2 WO 4 and 0.6g of polyvinyl alcohol (PVA) dissolved in 20ml of H 2 o 2 (30wt%), pipette 200uL above-mentioned solution and spin-coat on FTO, spin coater parameter is set to low-speed 600 rev / s, time 15 seconds, high-speed 1800 rev / sec, time 20 seconds; After the FTO thin film is dried at room temperature, Calcined at 500°C in air for 2h, the heating rate was 180°C / h, to obtain WO 3 / FTO seed crystal; 1.5gH 2 WO 4 Dissolve in 30mL H 2 O, add 20 mL of 30 wt% H 2 o 2 , heated at 95°C for 2h to obtain a clear solution, and set the volume to a 100ml volumetric flask to obtain 0.06mol / L of H 2 WO 4 solution; add 3mL H in 10mL acetonitrile 2 WO 4 (0.06mol / L) solution, 0.2g oxalic acid, 0.5mL hydrochloric acid solution with a concentration of 6mol / l and 2.5ml deionized water, stir for 15min to make the solution...
Embodiment 3
[0026] Preparation of Surface Hydroxylated WO by Plasma Treatment 3 The method for thin film photoelectrode material, concrete steps are as follows: take 2g of H 2 WO 4 and 0.8g polyvinyl alcohol (PVA) dissolved in 25ml of H 2 o 2 (30wt%), pipette 200uL above-mentioned solution and spin-coat on FTO, spin coater parameter is set to low speed 800 rev / s, time 10 seconds, high speed 2000 revs / sec, time 20 seconds; After the FTO film room temperature drying, Calcined at 500°C in air for 2h, the heating rate was 180°C / h, to obtain WO 3 / FTO seed crystal; 1.25gH 2 WO 4 Dissolve in 30mL H 2 O, add 17 mL of 30 wt% H 2 o 2 , heated at 95°C for 2h to obtain a clear solution, and dilute it to a 100ml volumetric flask to obtain 0.05mol / L of H 2 WO 4 solution; add 3mL H in 10mL acetonitrile 2 WO 4 (0.05mol / L) solution, 0.2g oxalic acid, 0.5mL hydrochloric acid solution with a concentration of 6mol / l and 2.5ml deionized water, stir for 15min to fully stir the solution evenly, wit...
PUM
Property | Measurement | Unit |
---|---|---|
size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com