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Preparation method of niobium-manganese doped anti-reduction dielectric material

A dielectric material and reduced technology, applied in the field of barium titanate-based dielectric ceramic materials and its preparation, to achieve excellent dielectric properties and good insulation properties

Inactive Publication Date: 2019-09-20
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the sintering under reducing atmosphere, BaTiO 3 Based on the semiconducting problem of base dielectric materials, a barium titanate-based dielectric material with high insulation resistivity and low loss and its preparation method are provided, in order to develop a base metal electrode MLCC that can meet the requirements of preparation and application today. Material

Method used

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  • Preparation method of niobium-manganese doped anti-reduction dielectric material
  • Preparation method of niobium-manganese doped anti-reduction dielectric material
  • Preparation method of niobium-manganese doped anti-reduction dielectric material

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Experimental program
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Effect test

Embodiment 1

[0022] First, weigh the BaTiO with an electronic balance 3 , Nb 2 o 5 , MnO 2 According to the molar ratio of 100:0.5:2, mix deionized water and zirconium balls with deionized water: zirconium balls: powder = 2:1:1, ball mill for 4 hours after mixing, pass through a 40-mesh sieve after drying, and then Add 7% paraffin by mass percentage, pass through an 80-mesh sub-sieve and granulate.

[0023] The granulated powder was pressed into a Ф10×1.1mm disc green body at 3MPa, and the green body was raised from room temperature to 550°C for debinding after 3.5 hours. At a flow rate of 50sccm N 2 In the air flow, the temperature was raised to 1000°C at 5°C / min, and then sintered at 1300°C at 2°C / min, and held for 3 hours to obtain a niobium-manganese-doped anti-reduction dielectric material with high insulation resistivity and low loss.

[0024] The upper and lower surfaces of the obtained product were evenly coated with silver paste, and the electrode was prepared by firing at 84...

Embodiment 2

[0026] First, weigh the BaTiO with an electronic balance 3 , Nb 2 o 5 , MnO 2 According to the molar ratio of 100:0.5:2, mix deionized water and zirconium balls with deionized water: zirconium balls: powder = 2:1:1, ball mill for 4 hours after mixing, pass through a 40-mesh sieve after drying, and then Add 7% paraffin by mass percentage, pass through an 80-mesh sub-sieve and granulate.

[0027] The granulated powder was pressed into a Ф10×1.1mm disc green body at 3MPa, and the green body was raised from room temperature to 550°C for debinding after 3.5 hours. At a flow rate of 50sccm N 2 In the air flow, the temperature was raised to 1000°C at 5°C / min, and then sintered at 1325°C at 2°C / min, and held for 3 hours to obtain a niobium-manganese-doped anti-reduction dielectric material with high insulation resistivity and low loss.

[0028] The upper and lower surfaces of the obtained product were evenly coated with silver paste, and the electrode was prepared by firing at 84...

Embodiment 3

[0030] First, weigh the BaTiO with an electronic balance 3 , Nb 2 o 5 , MnO 2 According to the molar ratio of 100:0.5:2, mix deionized water and zirconium balls with deionized water: zirconium balls: powder = 2:1:1, ball mill for 4 hours after mixing, pass through a 40-mesh sieve after drying, and then Add 7% paraffin by mass percentage, pass through an 80-mesh sub-sieve and granulate.

[0031] The granulated powder was pressed into a Ф10×1.1mm disc green body at 3MPa, and the green body was raised from room temperature to 550°C for debinding after 3.5 hours. At a flow rate of 50sccm N 2 In the air flow, the temperature was raised to 1000°C at 5°C / min, and then sintered at 1350°C at 2°C / min, and held for 3 hours to obtain a niobium-manganese-doped anti-reduction dielectric material with high insulation resistivity and low loss.

[0032] The upper and lower surfaces of the obtained product were evenly coated with silver paste, and the electrode was prepared by firing at 84...

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Abstract

The invention discloses a preparation method of a niobium-manganese doped anti-reduction dielectric material. The method comprises the following steps: firstly mixing raw materials according to a molar ratio of BaTiO3:Nb2O5:MnO2=100:0.5:2, performing ball-milling, oven-drying, sieving and granulating and then performing pressing to obtain a blank body, performing binder removal on the blank body and then performing sintering at 1300-1350 DEG C in a reduction atmosphere, and performing heat preservation for 2.5 h to prepare the barium titanate-based high-insulation niobium-manganese doped anti-reduction dielectric material. By adjustment of a sintering temperature, properties of the material can reach that the dielectric constant epsilon<25 DEG C> is 2434, the dielectric loss tan[sigma] is 0.0064, and the insulation resistivity rho<v> is 9.48 x 10<11> ohm*cm.

Description

technical field [0001] The invention belongs to a ceramic composition characterized by components, and specifically relates to a barium titanate-based dielectric ceramic material with high insulation resistivity, low loss, and anti-reduction characteristics and a preparation method thereof. Background technique [0002] Chip multilayer ceramic capacitors (Multilayer Ceramic Capacitors, MLCC) are widely used in aerospace, military and civilian fields due to their small size and high capacitance. The sales volume of MLCC has increased sharply in the past two years. At the same time, as one of the main electronic components, the market size of capacitors accounts for about 40% of the entire electronic component market. With the rapid development of information technology and electronic equipment, the demand shows an overall upward trend. In the face of huge demand, effectively reducing the preparation of MLCC has become a major problem. MLCCs used in military aerospace and oth...

Claims

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Application Information

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IPC IPC(8): C04B35/468C04B35/622
CPCC04B35/4682C04B35/622C04B2235/3251C04B2235/3267C04B2235/6562C04B2235/6567C04B2235/658C04B2235/96
Inventor 李玲霞张凯王文波王梦龙王瑞杰
Owner TIANJIN UNIV