P-N junction manufacturing technology of solar cell

Abstract

The invention belongs to the manufacturing field of crystalline silicon solar cells, and particularly relates to a P-N junction manufacturing technology of a solar cell. By using P-N junctions manufactured by a tubular high temperature diffusion annealing furnace, oxygen precipitations close to a surface are flown over under the effect of oxygen at low temperature by using a certain temperature variation. According to the manufacturing technology, the probability of hole electron recombination can be reduced under the light condition of the P-N junctions, then redistributed processing of P atoms is carried out under the condition of oxygen, the peak value of P atoms distributed at a maximum concentration is reduced, and the influence of a counter potential field on Voc is reduced or even eliminated, so that the purpose of improving the efficiency is reached, and an optimal P-N junction depth applicable for a current production line is obtained through the matching of temperature and time.

Description

technical field [0001] The invention belongs to the field of manufacturing crystalline silicon solar cells, in particular to a P-N junction manufacturing process for solar cells. Background technique [0002] A crystalline silicon solar cell is an electronic component that converts sunlight energy into electrical energy. The preparation of crystalline silicon solar cells generally goes through processes such as texturing, diffusion, coating, screen printing, and sintering. Texturing is divided into single crystal and polycrystalline texturing. Monocrystalline cells use alkali texturing to form pyramid textures on the surface of silicon wafers. Polycrystalline cells use acid etching to form pitted textures on the surface of silicon wafers. The suede surface on the silicon surface can increase the absorption of sunlight on the surface of the battery to achieve light trapping; the diffusion process is to form a P-N junction inside the silicon wafer through thermal diffusion, s...

AI Technical Summary

Problems solved by technology

[0003] At present, in the general diffusion process, the formed P atom distribution basically has a concentration distribution from low to high, forming a counter potential field, which reduces the Voc of the photovoltaic cell. In addition, there are Oxygen precipitation, and there are shortcomings such as counter potential field distribution near the surface, which reduces the conversion efficiency of photovoltaic cells