Polishing liquid and polishing method

一种研磨液、被研磨的技术，应用在研磨液领域，达到抑制侵蚀的效果

Pending Publication Date: 2019-09-27
RESONAC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, benzotriazole (BTA), which is effective in polishing copper and the like, is almost ineffective as a protective film forming agent for tungsten materials. Therefore, a polishing liquid containing a protective film forming agent that can effectively inhibit the erosion of tungsten materials is required.

Method used

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  • Polishing liquid and polishing method
  • Polishing liquid and polishing method
  • Polishing liquid and polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103] After dissolving 4 g of malic acid in 700 g of deionized water, 1 g of polymethacrylic acid 1 (using 2,2'-azobis[2-(5-methyl-2 -Imidazolin-2-yl) propane] dihydrochloride as a polymerization initiator, polymethacrylic acid with a weight average molecular weight of 7,000 synthesized using methacrylic acid as a monomer) was dissolved to obtain an aqueous solution. After adding 100 g of colloidal silica (aqueous dispersion with a silica content of 20% by mass, pH: 8.1, specific gravity: 1.1, viscosity: 3.5 mPa·s, secondary particle diameter of 60 nm during mixing) to this aqueous solution, 100 g of 30 mass % hydrogen peroxide water was added. Further, after adding an appropriate amount of 25% by mass ammonia water (pH adjuster) to adjust the pH of the polishing liquid to 2.5, the balance of deionized water was added to produce a total amount of 1000 g of polishing liquid 1. The content of abrasive grains in the polishing liquid was 2% by mass, the content of polymethacryli...

Embodiment 2

[0105] Except having used the polymethacrylic acid 2 of the weight average molecular weight 3200 which has a cationic group at the terminal of a main chain, it carried out similarly to Example 1, and the polishing liquid 2 was manufactured.

Embodiment 3

[0107] Except having used the polymethacrylic acid 3 of weight average molecular weight 4300 which has a cationic group at the terminal of a main chain, it carried out similarly to Example 1, and the polishing liquid 3 was manufactured.

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Abstract

Provided is a polishing liquid which is used to polish a surface-to-be-polished that contains a tungsten material, wherein: the polishing liquid contains abrasive grains, a polymer having cationic groups at terminals, an oxidizing agent, a metal oxide-solubilizing agent and water; the polymer has structural units derived from an unsaturated carboxylic acid and has a weight average molecular weight of 20,000 or less; and the polishing liquid has a pH of less than 5.0.

Description

technical field [0001] The invention relates to a grinding liquid and a grinding method. The present invention relates to a polishing liquid and a polishing method used for polishing in, for example, a wiring formation process of a semiconductor device. Background technique [0002] In recent years, new microfabrication techniques have been developed along with higher integration and higher performance of semiconductor integrated circuits (hereinafter referred to as "LSI"). The chemical mechanical polishing (hereinafter referred to as "CMP") method is also one of them. Wiring formation) frequently used technology. This technique is disclosed in Patent Document 1, for example. [0003] A damascene method is known as the formation of embedded wiring using CMP. The damascene method is, for example, at first, after forming a groove on the surface of an insulating material such as silicon oxide in advance, forming a barrier (barrier) material (such as a barrier film) followin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/00C09G1/02C09K3/14
CPCC09G1/02H01L21/3212B24B37/0053B24B37/044C09K3/14H01L21/304H01L21/7684C09G1/00C09K3/1454C09G1/06C09G1/04C09K13/06C09K3/1463H01L21/30625
Inventor 小野裕水谷真人
Owner RESONAC CORP
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