Preparation method of PbSe quantum dot near-infrared light-emitting diode

Abstract

The invention discloses a preparation method of a PbSe quantum dot near-infrared light-emitting diode. The preparation method comprises the following steps: adding OA, ODE and PbO powder into a three-necked flask, then injecting nitrogen into the three-necked flask, and thoroughly removing air; heating the three-necked flask until the PbO powder completely disappears, and a mixed solution becomescolorless; adding an Se-TOP solution containing Se powder into the three-necked flask, and heating the three-necked flask to obtain PbSe QDs particles; adding methylbenzene into the three-necked flask, and immersing the three-necked flask in a room-temperature water bath to perform a complete quenching reaction; precipitating and dispersing a PbSe QDs sample by using methanol and ethane, purifyingthe PbSe QDs sample, then dispersing the purified PbSe QDs sample into tetrachloroethylene; and injecting a PbSe QDs solution into a hollow hemisphere through an injector, sealing the hollow hemisphere, and placing the hollow hemisphere containing the PbSe QDs solution on a GaN chip. The near-infrared light-emitting diode prepared by the method has the characteristics of simplicity in manufacturing, narrow band, small size and easiness in tuning.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a preparation method of a PbSe quantum dot near-infrared light-emitting diode. Background technique [0002] Near-infrared light is an electromagnetic wave between visible light and mid-infrared light. According to the definition of American testing and material testing, it refers to electromagnetic waves with a wavelength in the range of 780-2526nm. It is customary to divide the near-infrared region into near-infrared short-wave and near-infrared long-wave. The near-infrared spectrum belongs to the double frequency and main frequency absorption spectrum of the molecular vibration spectrum. It is mainly due to the non-resonant nature of the molecular vibration that causes the molecular vibration to transition from the ground state to a high energy level. It has strong penetrating ability. Light is mainly the frequency-multiplication and frequency-combination absorption of...

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Problems solved by technology

[0003] At this stage, near-infrared absorption spectroscopy is a fairly mature technology with high selectivity and sensitivity, and is widely used in gas sensing applications, but an important limiting factor in near-infrared light absorption methods is the near-infrared light source, which Will directly affect the performance of the gas detection system. Available light sources for near-infrared include thermal radiation sources and semiconductor light-emitting diodes. For thermal radiation sources, continuous broadband spectra will lead to application limitations and bring additional complexity into the system. For semiconductor light-emitting Diodes, the band gap makes it difficult to adjust the emission wavelength of near-infrared light, and the existing near-infrared light sources cannot meet the requirements of near-infrared light applications

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