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Preparation method of PbSe quantum dot near-infrared light-emitting diode

A light-emitting diode and near-infrared technology, applied in the field of optoelectronics, can solve the problems of difficulty in adjusting the emission wavelength of near-infrared light, unable to meet the requirements of near-infrared light applications, affecting the performance of gas detection systems, etc., and achieve the effect of high quantum yield

Inactive Publication Date: 2019-10-11
LINGNAN NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At this stage, near-infrared absorption spectroscopy is a fairly mature technology with high selectivity and sensitivity, and is widely used in gas sensing applications, but an important limiting factor in near-infrared light absorption methods is the near-infrared light source, which Will directly affect the performance of the gas detection system. Available light sources for near-infrared include thermal radiation sources and semiconductor light-emitting diodes. For thermal radiation sources, continuous broadband spectra will lead to application limitations and bring additional complexity into the system. For semiconductor light-emitting Diodes, the band gap makes it difficult to adjust the emission wavelength of near-infrared light, and the existing near-infrared light sources cannot meet the requirements of near-infrared light applications

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  • Preparation method of PbSe quantum dot near-infrared light-emitting diode
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  • Preparation method of PbSe quantum dot near-infrared light-emitting diode

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Embodiment 1

[0027] A preparation method of a PbSe quantum dot near-infrared light-emitting diode, comprising the following steps:

[0028] Step 1: Add 5ml of OA, 12ml of ODE and 0.892g of PbO powder into the three-necked flask, then inject nitrogen into the three-necked flask to completely remove the air inside the three-necked flask;

[0029] Step 2: heating the three-necked flask to 176°C until the PbO powder completely disappears, and the mixed solution in the three-necked flask becomes colorless;

[0030] Step 3: Add 6.9ml of Se-TOP solution into the three-necked flask. The Se-TOP solution contains 0.64g of Se powder. Heat the three-necked flask at 143°C for 2 minutes to obtain a diameter of 4.64 nm PbSe QDs samples;

[0031] Step 4: Add 30ml of toluene into the three-necked flask, and then immerse the three-necked flask in a water bath at room temperature to completely quench the reaction;

[0032] Step 5: The PbSe QDs sample is precipitated and redispersed with methanol and ethane...

Embodiment 2

[0035] A preparation method of a PbSe quantum dot near-infrared light-emitting diode, comprising the following steps:

[0036] Step 1: Add 5ml of OA, 12ml of ODE and 0.892g of PbO powder into the three-necked flask, then inject nitrogen into the three-necked flask to completely remove the air inside the three-necked flask;

[0037] Step 2: heating the three-necked flask to 176°C until the PbO powder completely disappears, and the mixed solution in the three-necked flask becomes colorless;

[0038] Step 3: Add 6.9ml of Se-TOP solution into the three-necked flask. The Se-TOP solution contains 0.64g of Se powder. Heat the three-necked flask at 130°C for 7 minutes to obtain a diameter of 6.03 nm PbSe QDs samples;

[0039] Step 4: Add 30ml of toluene into the three-necked flask, and then immerse the three-necked flask in a water bath at room temperature to completely quench the reaction;

[0040] Step 5: The PbSe QDs sample is precipitated and redispersed with methanol and ethane...

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Abstract

The invention discloses a preparation method of a PbSe quantum dot near-infrared light-emitting diode. The preparation method comprises the following steps: adding OA, ODE and PbO powder into a three-necked flask, then injecting nitrogen into the three-necked flask, and thoroughly removing air; heating the three-necked flask until the PbO powder completely disappears, and a mixed solution becomescolorless; adding an Se-TOP solution containing Se powder into the three-necked flask, and heating the three-necked flask to obtain PbSe QDs particles; adding methylbenzene into the three-necked flask, and immersing the three-necked flask in a room-temperature water bath to perform a complete quenching reaction; precipitating and dispersing a PbSe QDs sample by using methanol and ethane, purifyingthe PbSe QDs sample, then dispersing the purified PbSe QDs sample into tetrachloroethylene; and injecting a PbSe QDs solution into a hollow hemisphere through an injector, sealing the hollow hemisphere, and placing the hollow hemisphere containing the PbSe QDs solution on a GaN chip. The near-infrared light-emitting diode prepared by the method has the characteristics of simplicity in manufacturing, narrow band, small size and easiness in tuning.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a preparation method of a PbSe quantum dot near-infrared light-emitting diode. Background technique [0002] Near-infrared light is an electromagnetic wave between visible light and mid-infrared light. According to the definition of American testing and material testing, it refers to electromagnetic waves with a wavelength in the range of 780-2526nm. It is customary to divide the near-infrared region into near-infrared short-wave and near-infrared long-wave. The near-infrared spectrum belongs to the double frequency and main frequency absorption spectrum of the molecular vibration spectrum. It is mainly due to the non-resonant nature of the molecular vibration that causes the molecular vibration to transition from the ground state to a high energy level. It has strong penetrating ability. Light is mainly the frequency-multiplication and frequency-combination absorption of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50C09K11/88
CPCC09K11/881H01L33/502H01L2933/0041
Inventor 黄洁仪戴培灿梁瑞锋陆水妹李栋宇张婷婷
Owner LINGNAN NORMAL UNIV
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