Connecting material for connecting silicon carbide material, and application thereof

A connection material, silicon carbide technology, applied in the connection of silicon carbide ceramics and its composite materials, silicon carbide and its composite materials, can solve the difficulty of direct connection, the difference in thermal and mechanical properties between the connection joint and the silicon carbide substrate, etc. Problems, to achieve the effect of densification sintering, lower temperature, and promote atomic diffusion

Inactive Publication Date: 2019-10-22
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the strong covalent bond between Si-C is difficult to break, it is difficult to achieve direct connection without adding a transition layer. Differences in thermal and mechanical properties between the connection joint and the silicon carbide substrate

Method used

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  • Connecting material for connecting silicon carbide material, and application thereof
  • Connecting material for connecting silicon carbide material, and application thereof
  • Connecting material for connecting silicon carbide material, and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] In this embodiment, the material to be connected is silicon carbide ceramics, and the material of the connection layer is Dy 3 Si 2 C 2 Coating, Dy 3 Si 2 C 2 The XRD characterization of Figure 4a shown. The connection method is electric field assisted connection. The specific implementation steps are as follows:

[0059] (1) Roughly polish the surface of silicon carbide ceramics with a diameter of 20 mm and a height of 20 mm with a 5 μm diamond polishing solution to remove large defects and impurities on the surface;

[0060] (2) Using the molten salt method, in a tube furnace at 900°C for 60 minutes, the rare earth dysprosium (Dy) reacts in situ on the surface of silicon carbide to form Dy with a thickness of about 1 μm 3 Si 2 C 2 coating, such as Figure 2a and Figure 2b shown;

[0061] (3) then the silicon carbide of two cladding coatings is packed in the graphite mold that diameter is 20mm;

[0062] (4) Place the graphite mold with the sample in the...

Embodiment 2

[0065] In this embodiment, the material to be connected is silicon carbide ceramics, and the material of the connection layer is Dy 3 Si 2 C 2 Coating, the connection method is electric field assisted connection. The specific implementation steps are as follows:

[0066] (1) Roughly polish the surface of silicon carbide ceramics with a diameter of 20 mm and a height of 20 mm with a 5 μm diamond polishing solution to remove large defects and impurities on the surface;

[0067] (2) Coating a Dy rare earth film with a thickness of 2000nm on the surface of silicon carbide by PVD method, and then heat treatment at 900°C to obtain Dy 3 Si 2 C 2 coating;

[0068] (3) then the silicon carbide of two cladding coatings is packed in the graphite mold that diameter is 20mm;

[0069] (4) Place the graphite mold with the sample in the spark plasma sintering furnace, pass the current, and raise the temperature to 1300°C, 1400°C, 1500°C, 1600°C at a rate of 100°C / min, keep it warm for ...

Embodiment 3

[0072] In this embodiment, the material to be connected is silicon carbide ceramics, and the material of the connection layer is Sm 3 Si 2 C 2 Coating, Sm 3 Si 2 C 2 The XRD characterization of Figure 4b As shown, the connection method is electric field assisted connection. The specific implementation steps are as follows:

[0073] (1) Roughly polish the surface of silicon carbide ceramics with a diameter of 20 mm and a height of 20 mm with a 5 μm diamond polishing solution to remove large defects and impurities on the surface;

[0074] (2) In situ preparation of Sm on SiC surface by molten salt method 3 Si 2 C 2 coating;

[0075] (3) Two pieces of coated silicon carbide are then installed in a graphite mold with a diameter of 20 mm.

[0076] (4) Place the graphite mold with the sample installed in the spark plasma sintering furnace, pass the current, and raise the temperature to 1300°C, 1400°C, 1500°C, 1600°C, 1700°C at a rate of 100°C / min, and keep it warm for 10...

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Abstract

The invention discloses a connecting material for connecting a silicon carbide material, and an application thereof. The connecting material comprises a rare earth carbon silicide, the chemical formula of the rare earth carbon silicide is Re3Si2C2, and Re being a rare earth element. The invention also discloses a use of the rare earth carbon silicide in the connection of the silicon carbide material, and a connecting method of the silicon carbide material. The rare earth carbon silicide is arranged at the connecting interface of the silicon carbide material to be connected, and is heated to 1000-1800 DEG C to combine the silicon carbide material to be connected into an integral body. The characteristic that the rare earth carbon silicide and the silicon carbide are converted into a liquidphase by a high-temperature eutectic reaction is utilized to effectively reduce the seamless connection temperature of the silicon carbide, the formation of the liquid phase is favorable for the densification sintering of the silicon carbide at the connecting interface, a part of liquid phase rare earth is extruded and volatilized under the action of a pressure, and the remaining liquid phase rareearth diffuses to the silicon carbide matrix along the grain boundary, so the seamless connection of silicon carbide is achieved.

Description

technical field [0001] The invention relates to the technical field of connection of silicon carbide ceramics and composite materials thereof, in particular to a method using rare earth carbide silicide (Re 3 Si 2 C 2 ) to connect the connecting material of silicon carbide material, and its application in the connection layer of silicon carbide and its composite material, which can be used in the technical field of connecting silicon carbide and its composite material. Background technique [0002] Silicon carbide (Silicon carbide, SiC) is one of the modern engineering ceramics. Its hardness is second only to diamond. It has small thermal expansion coefficient, high thermal conductivity, good chemical stability, high friction resistance, and good mechanical properties at high temperatures. The outstanding physical and chemical properties such as anti-oxidation and oxidation resistance have become the most promising structural ceramics. At the same time, silicon carbide al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00C01B32/90
CPCC01B32/90C01P2002/72C01P2004/03C04B37/00C04B2237/083
Inventor 黄庆万朋李勉周小兵
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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