Millimeter wave power amplifier synthesized by distributed active transformation

Abstract

The invention discloses a millimeter wave power amplifier synthesized by distributed active transformation. The millimeter wave power amplifier comprises an input power division phase shift compensation network, a first differential stacking amplification network, a second differential stacking amplification network and an output double-differential-to-single-ended synthesis network. According tothe invention, a core architecture adopts a first differential stacking amplification network and a second differential stacking amplification network; the good parasitic parameter inhibition of the differential amplifier in the millimeter wave frequency band and the high gain characteristic of the double stacked transistors are utilized to be combined with the good power synthesis characteristicof the distributed transformer network, so that the whole power amplifier obtains good high gain, high efficiency and high power output capability.

Description

technical field [0001] The invention relates to field effect transistor radio frequency power amplifiers and the field of integrated circuits, in particular to a distributed active voltage-transformation synthesized millimeter-wave power amplifier applied to a transmitting module at the end of a radio-frequency microwave transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and implement RF and microwave power amplifier chi...

AI Technical Summary

Problems solved by technology

[0004] (1) High power and high efficiency capabilities are limited: Traditional power amplifiers use a multi-channel parallel combination structure or a distributed structure. The combination efficiency of these two structures is limited, resulting in part of the power loss in the combination network, which limits high power. , high efficiency capability

[0005] (2) Low power consumption, high gain amplification capability is limited: the power amplifier of the traditional single-ended common source transistor is affected by the parasitic parameters of the transistor, the gain is low when working at high frequency, and the power capability is greatly limited at the same time, so as to achieve low power consumption more difficult

[0007] ①The output impedance of the traditional multi-stage, multi-channel synthesis single-ended power amplifier adopts the multi-channel parallel combination structure, so the output synthesis network needs to achieve impedance matching with high impedance transformation ratio, which often needs to sacrifice the gain of the amplifier and reduce the power. thus limiting the high power, high efficiency capability

[0008] ②In the traditional multi-stage, multi-channel synthesis single-ended power amplifier, in order to improve the influence of amplifier gain and isolation, the Cascode transistor amplification structure is also used. However, although the Cascode transistor increases the circuit isolation, the gain cannot be significantly deteriorated with frequency. , and the best impedance matching between Cascode dual transistors cannot be achieved, which reduces the output power characteristics

[0009] It can be seen from this that the design difficulties of high-gain and high-power amplifiers based on integrated circuit technology are: high power and high efficiency output is difficult; there are many limitations in the traditional single transistor structure or the multi-channel synthesis structure of Cascode transistors

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