Active driving circuit for SiC power device of electric vehicle motor controller

A technology of motor controllers and power devices, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as difficult to take into account voltage and current overshoot suppression and switching loss, weak adaptability, slow control response, etc., to achieve strong adaptability Excellent performance and adjustment ability, simple circuit implementation, and short feedback signal delay

Inactive Publication Date: 2019-11-01
HUNAN UNIV +1
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  • Application Information

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Problems solved by technology

[0010] In order to solve the above-mentioned problems existing in the prior art, the present invention provides an active driving circuit of a SiC power device of an electric vehicle motor controller, so as to solve the problem that the e

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  • Active driving circuit for SiC power device of electric vehicle motor controller
  • Active driving circuit for SiC power device of electric vehicle motor controller
  • Active driving circuit for SiC power device of electric vehicle motor controller

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[0028] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application.

[0029] like figure 1 and figure 2 As shown, the SiC power device active drive circuit of the electric vehicle motor controller, which includes dI D / dt detection circuit, dV DS / dt detection circuit, feedback signal filter circuit, differential amplifier circuit and power amplifier circuit, wherein:

[0030] The differential amplifier circuit is connected to the gate of the SiC power device MOSFET through the power amplifier circuit, and the differential amplifier circuit is also connected to a pulse generator V gg To input PWM drive signal;

[0031] The feedback sig...

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Abstract

The present invention provides an active driving circuit for a SiC power device of an electric vehicle motor controller. The active driving circuit comprises a dID/dt detecting circuit, a dVDS/dt detecting circuit, a feedback signal filtering circuit, a differential amplifying circuit and a power amplifying circuit. The differential amplifying circuit is connected with the gate of a SiC power device through the power amplifying circuit, the differential amplifying circuit is connected with a pulse generator Vgg to input a PWM drive signal; the feedback signal filtering circuit is connected with the differential amplifying circuit, the dID/dt detecting circuit is connected between the source of the SiC power device and the feedback signal filtering circuit, and the dVDS/dt detecting circuitis connected between the drain of the SiC power device and the feedback signal filtering circuit. The drain current change rate and the drain-source voltage change rate are directly fed back to the drive signal input end to modulate the drive signal, the current rising phase in the turn-on process and the voltage rising phase of the turn-off stage are independently controlled, a simple simulationcircuit is adopted to achieve, and therefore, the active driving circuit for the SiC power device of the electric vehicle motor controller is high in applicability, simple in implementation, low in cost and good in control effect.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to an active drive circuit for a SiC power device of an electric vehicle motor controller. Background technique [0002] As the global energy crisis and environmental pollution become increasingly prominent, new energy vehicles have become the focus of the international auto industry and have been favored by technology and policies. The vigorous development of new energy vehicles also puts forward new requirements for motor controllers, one of the core components of new energy vehicles, such as higher power density, higher operating efficiency and higher reliability, while existing silicon The performance of power semiconductor devices is close to the limit that silicon-based materials can withstand, and it is difficult to meet higher requirements. As a typical wide-bandgap semiconductor device, SiC power devices have the advantages of high switching speed, low conduction...

Claims

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Application Information

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IPC IPC(8): H02M1/08H03K17/082H03K17/042
CPCH02M1/08H03K17/04206H03K17/0822H02M1/0038H02M1/0054Y02B70/10
Inventor 刘平朱伟进李海鹏周振尹书虎
Owner HUNAN UNIV
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