Method for preparing rare earth silicate ceramics by chemical vapor deposition of oxygen-containing precursor

A technology of chemical vapor deposition and rare earth silicate, which is applied in the field of preparing rare earth silicate ceramics by chemical vapor deposition of oxygen-containing precursors, and can solve problems affecting the service life of SiCSiC materials

Active Publication Date: 2019-11-05
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] As a new generation of engine hot end parts material, SiC f /SiC materials are susceptible to water vapor in the combustion environment at

Method used

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  • Method for preparing rare earth silicate ceramics by chemical vapor deposition of oxygen-containing precursor
  • Method for preparing rare earth silicate ceramics by chemical vapor deposition of oxygen-containing precursor
  • Method for preparing rare earth silicate ceramics by chemical vapor deposition of oxygen-containing precursor

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Experimental program
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Effect test

Embodiment 1

[0028] Step 1: Raw material preparation: wt20% yttrium oxide, wt75% water, wt2% binder polyvinyl alcohol, wt1% dispersant ammonium polyacrylate, wt2% sintering aid lithium carbonate

[0029] Step 2: Slurry configuration and impregnation:

[0030] a. The mixed solution of wt75% water, wt2% polyvinyl alcohol, wt1% ammonium polyacrylate and wt2% lithium carbonate was magnetically stirred, the stirring time was 30min, and the stirring rate was 100r / min;

[0031] b. Add wt20% yttrium oxide to the obtained uniformly mixed liquid, and perform ball milling, the rotating speed of the ball milling drum is 120r / min, and the ball milling time is 12h, to obtain a uniformly mixed yttrium oxide slurry;

[0032] c. Vacuum and pressure impregnate the semi-dense ceramic matrix composite with yttrium oxide slurry, and dry at 120°C.

[0033] Step 3: Preparation of yttrium silicate by chemical vapor deposition: CH 3 SiCl 3 As a precursor, CO 2 As oxygen source, hydrogen as carrier gas and dilu...

Embodiment 2

[0036] Step 1: Raw material preparation: wt20% yttrium oxide, wt75% water, wt2% binder polyvinyl alcohol, wt1% dispersant ammonium polyacrylate, wt2% sintering aid lithium carbonate

[0037] Step 2: Slurry configuration and impregnation:

[0038] a. The mixed solution of wt75% water, wt2% polyvinyl alcohol, wt1% ammonium polyacrylate and wt2% lithium carbonate was magnetically stirred, the stirring time was 30min, and the stirring rate was 100r / min;

[0039] b. Add wt20% yttrium oxide to the obtained uniformly mixed liquid, and perform ball milling, the rotating speed of the ball milling drum is 120r / min, and the ball milling time is 12h, to obtain a uniformly mixed yttrium oxide slurry;

[0040] c. Vacuum and pressure impregnate the semi-dense ceramic matrix composite with yttrium oxide slurry, and dry at 120°C.

[0041] Step 3: Preparation of yttrium silicate by chemical vapor deposition: CH 3 SiCl 3 As a precursor, CO 2 As oxygen source, hydrogen as carrier gas and dilu...

Embodiment 3

[0044] Step 1: Raw material preparation: wt20% yttrium oxide, wt75% water, wt2% binder polyvinyl alcohol, wt1% dispersant ammonium polyacrylate, wt2% sintering aid lithium carbonate

[0045] Step 2: Slurry configuration and impregnation:

[0046] a. The mixed solution of wt75% water, wt2% polyvinyl alcohol, wt1% ammonium polyacrylate and wt2% lithium carbonate was magnetically stirred, the stirring time was 30min, and the stirring rate was 100r / min;

[0047] b. Add wt20% yttrium oxide to the obtained uniformly mixed liquid, and perform ball milling, the rotating speed of the ball milling drum is 120r / min, and the ball milling time is 12h, to obtain a uniformly mixed yttrium oxide slurry;

[0048] c. Vacuum and pressure impregnate the semi-dense ceramic matrix composite with yttrium oxide slurry, and dry at 120°C.

[0049] Step 3: Preparation of yttrium silicate by chemical vapor deposition: CH 3 SiCl 3 As a precursor, CO 2 As oxygen source, hydrogen as carrier gas and dilu...

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Abstract

The invention relates to a method for preparing rare earth silicate ceramics by chemical vapor deposition of an oxygen-containing precursor. A rare earth oxide is used as a reactant, CH3SiCl3 is usedas a precursor, CO2 is used as an oxygen source, hydrogen is used as a carrier gas and a dilution gas, argon is used as a protective gas, and the rare earth silicate ceramics are obtained by chemicalvapor deposition. The method can be used for preparing rare earth silicate ceramic powder, and can also be used for preparing rare earth silicate ceramic coatings, rare earth silicate ceramic modifiedstructural ceramics and ceramic matrix composite materials. The preparation temperature of the rare earth silicate ceramics is low, the problem that the preparation temperature of the rare earth silicate ceramic is too high is solved, the preparation process is simple to operate, the repeatability is strong, the shape of the material is not affected, industrial production can be realized, and a new method is provided for preparing the rare earth silicate ceramics and the rare earth silicate modified ceramic matrix composite materials by chemical vapor deposition.

Description

technical field [0001] The invention belongs to the field of preparation methods of rare earth silicate ceramics, and relates to a method for preparing rare earth silicate ceramics by chemical vapor deposition of an oxygen-containing precursor. Background technique [0002] As a new generation of engine hot end parts material, SiC f / SiC materials are susceptible to water vapor in the combustion environment at high temperatures (H 2 O) corrodes, forming volatile products (H 2 SiO 4 etc.), thus seriously affecting the SiC f / SiC material life. Rare earth silicates have low volatilization rate, excellent water and oxygen corrosion resistance, chemical stability and low thermal expansion coefficient in high-velocity gas environment, and can be compared with SiC f / SiC material match. Rare earth silicate as SiC f Research on high-temperature oxidation-resistant coating materials for SiC materials has been carried out one after another. The reported techniques for prepari...

Claims

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Application Information

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IPC IPC(8): C04B35/573
CPCC04B35/573C04B2235/3203C04B2235/3225
Inventor 刘永胜贺芳董宁王晶高雨晴宋超坤
Owner NORTHWESTERN POLYTECHNICAL UNIV
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