Semiconductor device integrating mosfet and diode and manufacturing method thereof
A semiconductor and diode technology, applied in the semiconductor field, can solve the problems of increased output capacitance and switching loss, easy breakdown or failure of the gate dielectric layer, increased system volume and cost, etc., so as to reduce power loss and reduce external electrical interaction. The effect of connecting and reducing leakage current
Active Publication Date: 2021-10-26
ALPHA POWER SOLUTIONS LTD +1
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Problems solved by technology
However, there are many deficiencies in the existing device structure, for example, the existing SiC MOSFET has a high turn-on voltage, so it often needs to be used with an anti-parallel freewheeling diode in many applications
Freewheeling diodes not only increase the size and cost of the system, but also lead to increased output capacitance and switching losses
In addition, the gate dielectric layer of MOSFET is prone to breakdown or failure under high electric field, and its stability is poor, which is detrimental to device performance
Method used
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[0015] In order to facilitate the understanding of the present invention, a number of exemplary embodiments will be described below with reference to the associated drawings. It should be understood by those skilled in the art that the embodiments herein are only for the purpose of illustrating the present invention, rather than limiting the present invention.
[0016] As used herein, the term "low-resistance contact" refers to an electrical contact that allows easy movement or flow of charges. For example, an ohmic contact is a typical low-resistance contact.
[0017] According to the first aspect of the present invention, figure 1 A schematic structural view of a semiconductor device according to a first embodiment of the present invention is shown. The semiconductor device includes a semiconductor layer 10 . The semiconductor layer 10 has a first or top or front side 12 and a second or bottom or back side 14 . The first face 12 is opposite to the second face 14 . The s...
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The invention discloses a semiconductor device integrating a MOSFET and a diode and a manufacturing method thereof. The MOSFET and the diode are disposed on the same semiconductor layer, and the semiconductor layer has a first side and a second side. The MOSFET includes a first region including a first well region, a first source region, and a first gate region, and a second region including a second well region, a second source region, and a second gate region. The diode is disposed between the first region and the second region, and the diode includes a first Schottky region and a second Schottky region. The first Schottky area is disposed close to the first area, and the second Schottky area is disposed close to the second area. The semiconductor device further includes an electric field modulation region disposed between the first Schottky region and the second Schottky region. The present invention also provides a method for manufacturing the semiconductor device. The semiconductor device according to the present invention has better current capability, voltage capability, reliability and higher chip integration.
Description
technical field [0001] The present invention relates to the field of semiconductors, and more specifically, to a semiconductor device integrating MOSFETs and diodes and a manufacturing method thereof. Background technique [0002] Semiconductor devices, such as silicon carbide (SiC) diodes and metal-oxide semiconductor field-effect transistors (MOSFETs), have a wide range of applications, for example in power devices for electric vehicles. However, there are many deficiencies in the existing device structure. For example, the existing SiC MOSFET has a high turn-on voltage, so it is often required to be used with an anti-parallel freewheeling diode in many applications. Freewheeling diodes not only increase the size and cost of the system, but also lead to increased output capacitance and switching losses. In addition, the gate dielectric layer of MOSFET is prone to breakdown or failure under high electric field, and its stability is poor, which is detrimental to device perf...
Claims
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IPC IPC(8): H01L27/06H01L29/78H01L29/872H01L21/82
CPCH01L21/8213H01L27/0629H01L29/7806H01L29/872
Inventor 郑亚良李浩南陈伟钿周永昌黎沛涛
Owner ALPHA POWER SOLUTIONS LTD