Lateral insulated gate bipolar transistor and preparation method thereof

A bipolar transistor, insulated gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of weak conductance modulation effect in the drift region, high forward voltage drop, slow turn-off speed, etc. Achieve the effect of optimizing carrier distribution, reducing forward conduction voltage drop, and reducing driving loss

Active Publication Date: 2019-11-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF15 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the device is in forward conduction, the holes injected by the collector junction enter the drift region, and since the minority carriers in the drift region flow away from the base region, the conductance modulation effect in the drift region is weak, and the forward conduction voltage drop is high; and D

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lateral insulated gate bipolar transistor and preparation method thereof
  • Lateral insulated gate bipolar transistor and preparation method thereof
  • Lateral insulated gate bipolar transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0058] Example 1;

[0059] This embodiment provides a lateral insulated gate bipolar transistor with a half-cell structure such as figure 2 As shown, the two-dimensional cross-sectional structures obtained along the dotted line AB and the dotted line CD in the half-cell structure are as follows image 3 with Figure 4 Shown. This embodiment includes a P-type substrate 1, a silicon dioxide isolation layer 2, and an N-type drift region 3 arranged from bottom to top; an N-type buffer zone 4 is arranged on one side of the top layer of the N-type drift region 3 in the longitudinal direction, so The longitudinal direction is the third three-dimensional direction that is perpendicular to both the horizontal and vertical directions of the device; the N-type buffer area 4 is provided with an N-type collector region 5, and the upper surface of the N-type collector region 5 is provided with a first metalized collector electrode 6; The side of the N-type drift region 3 that is away from the...

Example Embodiment

[0065] Example 2:

[0066] This embodiment provides a lateral insulated gate bipolar transistor with a half-cell structure such as Figure 5 As shown, the two-dimensional cross-sectional view along the dotted line AB in the figure is as Image 6 Shown. In this embodiment, on the basis of embodiment 1, in the first trench gate structure, the vertical direction of the first silicon dioxide layer 11 is below and the longitudinal direction of the N-type drift region 3 is close to the side of the first silicon dioxide layer 1. A P-type shielding layer 16 is provided. The doping concentration of the P-type shielding layer 16 is higher than the doping concentration of the N-type drift region 3; a third gate oxide layer 131 is provided on the upper surface of the P-type base region 8. The layer 131 extends vertically above the N-type charge storage region 15; a second polysilicon gate electrode 141 is provided above the third gate oxide layer 131.

[0067] In particular, the P-type shield...

Example Embodiment

[0070] Example 3:

[0071] This embodiment provides a lateral insulated gate bipolar transistor with a cell structure such as Figure 7 As shown, on the basis of Embodiment 1, the polysilicon gate electrode 14 and the second silicon dioxide layer 13 whose longitudinal direction length is greater than the longitudinal direction length of the N-type emitter region 8 are directed toward the N-type emitter region 8 in the horizontal direction. The direction extends until the cell boundary.

[0072] In particular, the longitudinal boundary of the N-type charge storage region 15 coincides with the longitudinal outer boundary of the second silicon dioxide layer 13.

[0073] Compared with Embodiment 1, the elongated gate is located between the collector and the emitter, which can block the flow of carriers when it is turned on, produce a carrier storage effect, improve the conductivity modulation ability of the drift region, and reduce the turn-on voltage drop. ; At the same time when the f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of power semiconductor devices and relates to a lateral insulated gate bipolar transistor and a manufacturing method thereof. Based on an LIGBT device structure, a carrier storage layer is added, the conductivity modulation effect in a drift region is enhanced, and the on-state voltage drop of a device is reduced. A grid electrode is wrapped with a separation gate, the Miller capacitance is reduced, the turn-off is reduced, the turn-off loss is reduced, and the compromise between a forward turn-on voltage drop (Vceon) and a turn-off loss (Eoff) is improved. The grid charge of the device can be reduced, the requirement for driving circuit ability is reduced, the driving loss is reduced, and the compromise characteristic between a current decreaserate (di/dt) and a turn-on loss (Eon) is optimized. A thick oxide layer at the bottom of a trench gate can reduce an electric field at a corner of a trench, the concentration of the electric field ata sharp corner of a bottom of the trench is alleviated, the breakdown voltage of the device is increased, the reliability of the device is improved, a thin gate oxide layer can reduce the threshold voltage of the device, and the latch current density can be increased.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a lateral insulated gate bipolar transistor. Background technique [0002] The lateral IGBT device is a horizontally integrated power device developed on the basis of the IGBT. It combines the advantages of the IGBT device structure, such as high input impedance, low driving power, reduced conduction voltage, fast switching speed, and strong voltage blocking capability. And it has obtained important applications in the field of horizontally integrated devices. [0003] As the feature size of semiconductor devices continues to decrease, the interaction between PN junctions inside the device and between devices through the substrate is becoming more and more serious, which greatly reduces the reliability of devices produced by traditional bulk silicon processes. SOI technology uses a buried oxide layer to isolate the top-layer silicon from the underlying s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/06H01L29/423H01L29/739H01L21/28H01L21/331
CPCH01L29/7394H01L29/66325H01L29/0684H01L29/42312H01L29/401H01L29/0611
Inventor 张金平赵阳王康刘竞秀李泽宏张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap